Issued Patents All Time
Showing 25 most recent of 37 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11499310 | Gait assistance slab | Don Herner, Daniel B. Gast | 2022-11-15 |
| 11467556 | System and method for projection of light pattern on work-piece | Leslie Park, Christopher Yee, Betsy Luk, Don Herner | 2022-10-11 |
| 11443942 | Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN films and its alloys with AIN at low temperatures | Neeraj Nepal, Nadeemullah A. Mahadik, Syed B. Qadri, Michael J. Mehl | 2022-09-13 |
| 11219262 | System and method for providing safety assistance in vehicle | Leslie Park, Christopher Yee, Betsy Luk, Don Herner | 2022-01-11 |
| 10937649 | Epitaxial growth of cubic and hexagonal InN films and their alloys with AlN and GaN | Neeraj Nepal, Nadeemmullah A. Mahadik, Syed B. Qadri, Michael J. Mehl | 2021-03-02 |
| 10494738 | Growth of crystalline materials on two-dimensional inert materials | Neeraj Nepal, Virginia D. Wheeler, Francis J. Kub, Travis J. Anderson, Michael A. Mastro +2 more | 2019-12-03 |
| 10266963 | Growth of crystalline materials on two-dimensional inert materials | Neeraj Nepal, Virginia D. Wheeler, Francis J. Kub, Travis J. Anderson, Michael A. Mastro +2 more | 2019-04-23 |
| 10256094 | Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch process | Rachael L. Myers-Ward, David Kurt Gaskill, Robert E. Stahlbush, Nadeemmullah A. Mahadik, Virginia D. Wheeler | 2019-04-09 |
| 10256090 | Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch process | Rachael L. Myers-Ward, David Kurt Gaskill, Robert E. Stahlbush, Nadeemmullah A. Mahadik, Virginia D. Wheeler | 2019-04-09 |
| 9773666 | Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN and its alloys with AIN at low temperatures | Neeraj Nepal, Nadeemmullah A. Mahadik, Syed B. Qadri, Michael J. Mehl | 2017-09-26 |
| 9679766 | Method for vertical and lateral control of III-N polarity | Jennifer K. Hite, Francis J. Kub, Nelson Garces | 2017-06-13 |
| 9464366 | Reduction of basal plane dislocations in epitaxial SiC | Rachael L. Myers-Ward, David Kurt Gaskill, Brenda L VanMil, Robert E. Stahlbush | 2016-10-11 |
| 9396941 | Method for vertical and lateral control of III-N polarity | Jennifer K. Hite, Francis J. Kub, Nelson Garces | 2016-07-19 |
| 9117736 | Diamond and diamond composite material | Francis J. Kub, Boris N. Feygelson, Scooter Johnson | 2015-08-25 |
| 9111786 | Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material | Francis J. Kub, Travis J. Anderson, Michael A. Mastro, Jennifer K. Hite | 2015-08-18 |
| 9105499 | Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material | Francis J. Kub, Travis J. Anderson, Michael A. Mastro, Jennifer K. Hite | 2015-08-11 |
| 9099375 | Diamond and diamond composite material | Francis J. Kub, Boris N. Feygelson, Scooter Johnson | 2015-08-04 |
| 9028919 | Epitaxial graphene surface preparation for atomic layer deposition of dielectrics | Nelson Garces, Virginia D. Wheeler, David Kurt Gaskill, Glenn G. Jernigan | 2015-05-12 |
| 9018056 | Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material | Francis J. Kub, Travis J. Anderson, Michael A. Mastro, Jennifer K. Hite | 2015-04-28 |
| 8999060 | Method of growing GaN whiskers from a gallium-containing solvent at low pressure and low temperature | Boris N. Feigelson, Jennifer K. Hite, Francis J. Kub | 2015-04-07 |
| 8920877 | Preparation of epitaxial graphene surfaces for atomic layer deposition of dielectrics | Nelson Garces, Virginia D. Wheeler, David Kurt Gaskill, Glenn G. Jernigan | 2014-12-30 |
| 8900939 | Transistor with enhanced channel charge inducing material layer and threshold voltage control | Francis J. Kub, Travis J. Anderson, Karl D. Hobart, Michael A. Mastro | 2014-12-02 |
| 8679248 | GaN whiskers and methods of growing them from solution | Boris N. Feigelson, Jennifer K. Hite, Francis J. Kub | 2014-03-25 |
| 8652255 | Method of producing epitaxial layers with low basal plane dislocation concentrations | Robert E. Stahlbush, Brenda L VanMil, Kok-Keong Lew, Rachael L. Myers-Ward, David Kurt Gaskill | 2014-02-18 |
| 8648390 | Transistor with enhanced channel charge inducing material layer and threshold voltage control | Francis J. Kub, Karl D. Hobart, Michael A. Mastro, Travis J. Anderson | 2014-02-11 |