Issued Patents All Time
Showing 1–16 of 16 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11789004 | Graphene-based PPB level sulfur detector | Evgeniya H. Lock, F. Keith Perkins, Anthony K. Boyd, David Kurt Gaskill, Anindya Nath | 2023-10-17 |
| 11649159 | Silicon carbide structure, device, and method | Francis J. Kub, Karl D. Hobart, Eugene A. Imhoff | 2023-05-16 |
| 11572281 | Method for graphene functionalization that preserves characteristic electronic properties such as the quantum hall effect and enables nanoparticles deposition | Evgeniya H. Lock, Michael S. Osofsky, Raymond C Y Auyeung, David Kurt Gaskill, Joseph Prestigiacomo | 2023-02-07 |
| 10976297 | Graphene-based PPB level sulfur detector in fuels | Evgeniya H. Lock, F. Keith Perkins, Anthony K. Boyd, David Kurt Gaskill, Anindya Nath | 2021-04-13 |
| 10928351 | Plasma modified epitaxial fabricated graphene on SiC for electrochemical trace detection of explosives | Scott A. Trammell, Sandra C. Hangarter, Daniel Zabetakis, David A. Stenger, David Kurt Gaskill +1 more | 2021-02-23 |
| 10717642 | Silicon carbide microelectromechanical structure, device, and method | Francis J. Kub, Karl D. Hobart, Eugene A. Imhoff, Eugene H. Cook, Jonathan J. Bernstein +1 more | 2020-07-21 |
| 10589983 | Silicon carbide microelectromechanical structure, device, and method | Francis J. Kub, Karl D. Hobart, Eugene A. Imhoff, Eugene H. Cook, Jonathan J. Bernstein +1 more | 2020-03-17 |
| 10494738 | Growth of crystalline materials on two-dimensional inert materials | Neeraj Nepal, Virginia D. Wheeler, Charles R. Eddy, Jr., Francis J. Kub, Travis J. Anderson +2 more | 2019-12-03 |
| 10343900 | Material structure and method for deep silicon carbide etching | Eugene A. Imhoff, Francis J. Kub, Karl D. Hobart | 2019-07-09 |
| 10317210 | Whole angle MEMS gyroscope on hexagonal crystal substrate | Francis J. Kub, Karl D. Hobart, Eugene A. Imhoff, Eugene H. Cook, Marc S. Weinberg +1 more | 2019-06-11 |
| 10266963 | Growth of crystalline materials on two-dimensional inert materials | Neeraj Nepal, Virginia D. Wheeler, Charles R. Eddy, Jr., Francis J. Kub, Travis J. Anderson +2 more | 2019-04-23 |
| 10256094 | Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch process | David Kurt Gaskill, Charles R. Eddy, Jr., Robert E. Stahlbush, Nadeemmullah A. Mahadik, Virginia D. Wheeler | 2019-04-09 |
| 10256090 | Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch process | David Kurt Gaskill, Charles R. Eddy, Jr., Robert E. Stahlbush, Nadeemmullah A. Mahadik, Virginia D. Wheeler | 2019-04-09 |
| 9464366 | Reduction of basal plane dislocations in epitaxial SiC | David Kurt Gaskill, Brenda L VanMil, Robert E. Stahlbush, Charles R. Eddy, Jr. | 2016-10-11 |
| 8652255 | Method of producing epitaxial layers with low basal plane dislocation concentrations | Robert E. Stahlbush, Brenda L VanMil, Kok-Keong Lew, David Kurt Gaskill, Charles R. Eddy, Jr. | 2014-02-18 |
| 8603243 | Tracking carbon to silicon ratio in situ during silicon carbide growth | Brenda L VanMil, Kok-Keong Lew, Charles R. Eddy, Jr., David Kurt Gaskill | 2013-12-10 |