RS

Robert E. Stahlbush

UF US Air Force: 6 patents #954 of 16,312Top 6%
UN US Navy: 3 patents #145 of 884Top 20%
CI Ciba-Geigy: 1 patents #1,572 of 2,867Top 55%
📍 Silver Spring, MD: #145 of 1,812 inventorsTop 9%
🗺 Maryland: #3,153 of 35,612 inventorsTop 9%
Overall (All Time): #503,355 of 4,157,543Top 15%
10
Patents All Time

Issued Patents All Time

Showing 1–10 of 10 patents

Patent #TitleCo-InventorsDate
11171055 UV laser slicing of β-Ga2O3 by micro-crack generation and propagation Nadeemullah A. Mahadik, Marko J. Tadjer, Karl D. Hobart, Francis J. Kub 2021-11-09
10403509 Basal plane dislocation elimination in 4H—SiC by pulsed rapid thermal annealing Marko J. Tadjer, Boris N. Feigelson, Nadeemullah A. Mahadik, Eugene A. Imhoff, Jordan D. Greenlee 2019-09-03
10256094 Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch process Rachael L. Myers-Ward, David Kurt Gaskill, Charles R. Eddy, Jr., Nadeemmullah A. Mahadik, Virginia D. Wheeler 2019-04-09
10256090 Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch process Rachael L. Myers-Ward, David Kurt Gaskill, Charles R. Eddy, Jr., Nadeemmullah A. Mahadik, Virginia D. Wheeler 2019-04-09
10020366 Removal of basal plane dislocations from silicon carbide substrate surface by high temperature annealing and preserving surface morphology Nadeemullah A. Mahadik, Eugene A. Imhoff, Marko J. Tadjer 2018-07-10
9464366 Reduction of basal plane dislocations in epitaxial SiC Rachael L. Myers-Ward, David Kurt Gaskill, Brenda L VanMil, Charles R. Eddy, Jr. 2016-10-11
9129799 Elimination of basal plane dislocations in post growth silicon carbide epitaxial layers by high temperature annealing while preserving surface morphology Nadeemullah A. Mahadik, Marko J. Tadjer, Eugene A. Imhoff, Boris N. Feigelson 2015-09-08
8652255 Method of producing epitaxial layers with low basal plane dislocation concentrations Brenda L VanMil, Kok-Keong Lew, Rachael L. Myers-Ward, David Kurt Gaskill, Charles R. Eddy, Jr. 2014-02-18
7915143 Method of mediating forward voltage drift in a SiC device Joshua D. Caldwell, Karl D. Hobart, Marko J. Tadjer, Orest J. Glembocki 2011-03-29
4396769 Process for preparing crystalline, non-dusting bis(2,2,6,6-tetramethylpiperidin-4-yl) sebacate Anibal L. Ferreira 1983-08-02