EI

Eugene A. Imhoff

UF US Air Force: 5 patents #1,223 of 16,312Top 8%
UN US Navy: 4 patents #100 of 884Top 15%
DL Draper Laboratory: 1 patents #495 of 921Top 55%
W& Whitaker &: 1 patents #650 of 1,437Top 50%
📍 Washington, DC: #218 of 3,063 inventorsTop 8%
🗺 District of Columbia: #218 of 3,063 inventorsTop 8%
Overall (All Time): #447,551 of 4,157,543Top 15%
11
Patents All Time

Issued Patents All Time

Showing 1–11 of 11 patents

Patent #TitleCo-InventorsDate
11649159 Silicon carbide structure, device, and method Francis J. Kub, Karl D. Hobart, Rachael L. Myers-Ward 2023-05-16
10717642 Silicon carbide microelectromechanical structure, device, and method Francis J. Kub, Karl D. Hobart, Rachael L. Myers-Ward, Eugene H. Cook, Jonathan J. Bernstein +1 more 2020-07-21
10589983 Silicon carbide microelectromechanical structure, device, and method Francis J. Kub, Karl D. Hobart, Rachael L. Myers-Ward, Eugene H. Cook, Jonathan J. Bernstein +1 more 2020-03-17
10403509 Basal plane dislocation elimination in 4H—SiC by pulsed rapid thermal annealing Marko J. Tadjer, Boris N. Feigelson, Nadeemullah A. Mahadik, Robert E. Stahlbush, Jordan D. Greenlee 2019-09-03
10343900 Material structure and method for deep silicon carbide etching Francis J. Kub, Karl D. Hobart, Rachael L. Myers-Ward 2019-07-09
10317210 Whole angle MEMS gyroscope on hexagonal crystal substrate Francis J. Kub, Karl D. Hobart, Rachael L. Myers-Ward, Eugene H. Cook, Marc S. Weinberg +1 more 2019-06-11
10020366 Removal of basal plane dislocations from silicon carbide substrate surface by high temperature annealing and preserving surface morphology Nadeemullah A. Mahadik, Robert E. Stahlbush, Marko J. Tadjer 2018-07-10
9129799 Elimination of basal plane dislocations in post growth silicon carbide epitaxial layers by high temperature annealing while preserving surface morphology Nadeemullah A. Mahadik, Robert E. Stahlbush, Marko J. Tadjer, Boris N. Feigelson 2015-09-08
8723218 Silicon carbide rectifier Karl D. Hobart, Francis J. Kub, Mario Ancona 2014-05-13
7759186 Method for fabricating junction termination extension with formation of photosensitive dopant mask to control doping profile and lateral width for high-voltage electronic devices Francis J. Kub, Karl D. Hobart 2010-07-20
5981975 On-chip alignment fiducials for surface emitting devices 1999-11-09