MT

Marko J. Tadjer

UN US Navy: 13 patents #19 of 884Top 3%
UF US Air Force: 11 patents #381 of 16,312Top 3%
University of California: 1 patents #8,022 of 18,278Top 45%
NG Northrop Grumman: 1 patents #690 of 1,695Top 45%
📍 Vienna, VA: #42 of 839 inventorsTop 6%
🗺 Virginia: #968 of 34,511 inventorsTop 3%
Overall (All Time): #167,483 of 4,157,543Top 5%
24
Patents All Time

Issued Patents All Time

Showing 1–24 of 24 patents

Patent #TitleCo-InventorsDate
12243916 Polarization-engineered heterogeneous semiconductor heterostructures Karl D. Hobart, Michael A. Mastro, Mark Goorsky, Asif Khan, Samuel Graham, Jr. 2025-03-04
12020985 Transferring large-area group III-nitride semiconductor material and devices to arbitrary substrates Travis J. Anderson, Karl D. Hobart 2024-06-25
11817318 GaN devices with ion implanted ohmic contacts and method of fabricating devices incorporating the same Travis J. Anderson, James C. Gallagher, Alan G. Jacobs, Boris N. Feigelson 2023-11-14
11634834 Diamond on nanopatterned substrate Karl D. Hobart, Tatyana I. Feygelson, Travis J. Anderson, Andrew D. Koehler, Samuel Graham, Jr. +5 more 2023-04-25
11532478 GaN devices with ion implanted ohmic contacts and method of fabricating devices incorporating the same Travis J. Anderson, James C. Gallagher, Alan G. Jacobs, Boris N. Feigelson 2022-12-20
11342420 Heterojunction devices and methods for fabricating the same Francis J. Kub, Travis J. Anderson, Andrew D. Koehler, Karl D. Hobart 2022-05-24
11201058 GaN devices with ion implanted ohmic contacts and method of fabricating devices incorporating the same Travis J. Anderson, James C. Gallagher, Alan G. Jacobs, Boris N. Feigelson 2021-12-14
11171055 UV laser slicing of β-Ga2O3 by micro-crack generation and propagation Nadeemullah A. Mahadik, Robert E. Stahlbush, Karl D. Hobart, Francis J. Kub 2021-11-09
11131039 Diamond on nanopatterned substrate Karl D. Hobart, Tatyana I. Feygelson, Travis J. Anderson, Andrew D. Koehler, Samuel Graham, Jr. +5 more 2021-09-28
10777644 Heterojunction devices and methods for fabricating the same Francis J. Kub, Travis J. Anderson, Andrew D. Koehler, Karl D. Hobart 2020-09-15
10424643 Diamond air bridge for thermal management of high power devices Karl D. Hobart, Andrew D. Koehler, Francis J. Kub, Travis J. Anderson, Tatyana I. Feygelson +1 more 2019-09-24
10403509 Basal plane dislocation elimination in 4H—SiC by pulsed rapid thermal annealing Boris N. Feigelson, Nadeemullah A. Mahadik, Robert E. Stahlbush, Eugene A. Imhoff, Jordan D. Greenlee 2019-09-03
10312175 Diamond air bridge for thermal management of high power devices Karl D. Hobart, Andrew D. Koehler, Francis J. Kub, Travis J. Anderson, Tatyana I. Feygelson +1 more 2019-06-04
10020366 Removal of basal plane dislocations from silicon carbide substrate surface by high temperature annealing and preserving surface morphology Nadeemullah A. Mahadik, Robert E. Stahlbush, Eugene A. Imhoff 2018-07-10
9991354 Metal nitride alloy contact for semiconductor Travis J. Anderson, Virginia D. Wheeler, David Shahin, Andrew D. Koehler, Karl D. Hobart +1 more 2018-06-05
9960266 Damage-free plasma-enhanced CVD passivation of AlGaN/GaN high electron mobility transistors Andrew D. Koehler, Travis J. Anderson, Karl D. Hobart 2018-05-01
9466684 Transistor with diamond gate Andrew D. Koehler, Travis J. Anderson, Karl D. Hobart, Tatyana I. Feygelson 2016-10-11
9331163 Transistor with diamond gate Andrew D. Koehler, Travis J. Anderson, Tatyana I. Feygelson, Karl D. Hobart 2016-05-03
9305858 Nanocrystalline diamond three-dimensional films in patterned semiconductor substrates Karl D. Hobart, Tatyana I. Feygelson, Bradford B. Pate, Travis J. Anderson 2016-04-05
9196703 Selective deposition of diamond in thermal vias Karl D. Hobart, Tatyana I. Feygelson, Eugene I. Imhoff, Travis J. Anderson, Joshua D. Caldwell +8 more 2015-11-24
9159641 Nanocrystalline diamond three-dimensional films in patterned semiconductor substrates Karl D. Hobart, Tatyana I. Feygelson, Bradford B. Pate, Travis J. Anderson 2015-10-13
9129799 Elimination of basal plane dislocations in post growth silicon carbide epitaxial layers by high temperature annealing while preserving surface morphology Nadeemullah A. Mahadik, Robert E. Stahlbush, Eugene A. Imhoff, Boris N. Feigelson 2015-09-08
8445383 Transparent nanocrystalline diamond contacts to wide bandgap semiconductor devices Karl D. Hobart, Tatyana I. Feygelson, Joshua D. Caldwell, Kendrick X Liu, Francis J. Kub +2 more 2013-05-21
7915143 Method of mediating forward voltage drift in a SiC device Joshua D. Caldwell, Robert E. Stahlbush, Karl D. Hobart, Orest J. Glembocki 2011-03-29