Issued Patents All Time
Showing 1–22 of 22 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12376388 | Low resistance photoconductive semiconductor switch (PCSS) | Travis J. Anderson, Geoffrey M. Foster, Karl D. Hobart, Francis J. Kub, Michael A. Mastro | 2025-07-29 |
| 11996840 | Light controlled switch module | Travis J. Anderson, Geoffrey M. Foster, Karl D. Hobart, Francis J. Kub, Michael A. Mastro | 2024-05-28 |
| 11634834 | Diamond on nanopatterned substrate | Karl D. Hobart, Tatyana I. Feygelson, Marko J. Tadjer, Travis J. Anderson, Samuel Graham, Jr. +5 more | 2023-04-25 |
| 11342420 | Heterojunction devices and methods for fabricating the same | Francis J. Kub, Travis J. Anderson, Marko J. Tadjer, Karl D. Hobart | 2022-05-24 |
| 11131039 | Diamond on nanopatterned substrate | Karl D. Hobart, Tatyana I. Feygelson, Marko J. Tadjer, Travis J. Anderson, Samuel Graham, Jr. +5 more | 2021-09-28 |
| 10777644 | Heterojunction devices and methods for fabricating the same | Francis J. Kub, Travis J. Anderson, Marko J. Tadjer, Karl D. Hobart | 2020-09-15 |
| 10424643 | Diamond air bridge for thermal management of high power devices | Karl D. Hobart, Francis J. Kub, Travis J. Anderson, Tatyana I. Feygelson, Marko J. Tadjer +1 more | 2019-09-24 |
| 10312175 | Diamond air bridge for thermal management of high power devices | Karl D. Hobart, Francis J. Kub, Travis J. Anderson, Tatyana I. Feygelson, Marko J. Tadjer +1 more | 2019-06-04 |
| 10229839 | Transition metal-bearing capping film for group III-nitride devices | Travis J. Anderson, Boris N. Feygelson, Karl D. Hobart, Francis J. Kub, Jordan D. Greenlee | 2019-03-12 |
| 10158009 | Method of making a graphene base transistor with reduced collector area | Francis J. Kub, Travis J. Anderson | 2018-12-18 |
| 10002958 | Diamond on III-nitride device | Francis J. Kub, Travis J. Anderson, Virginia D. Wheeler, Karl D. Hobart | 2018-06-19 |
| 9991354 | Metal nitride alloy contact for semiconductor | Travis J. Anderson, Virginia D. Wheeler, David Shahin, Karl D. Hobart, Francis J. Kub +1 more | 2018-06-05 |
| 9960266 | Damage-free plasma-enhanced CVD passivation of AlGaN/GaN high electron mobility transistors | Marko J. Tadjer, Travis J. Anderson, Karl D. Hobart | 2018-05-01 |
| 9590081 | Method of making a graphene base transistor with reduced collector area | Francis J. Kub, Travis J. Anderson | 2017-03-07 |
| 9490356 | Growth of high-performance III-nitride transistor passivation layer for GaN electronics | Travis J. Anderson, Karl D. Hobart, Francis J. Kub | 2016-11-08 |
| 9466684 | Transistor with diamond gate | Travis J. Anderson, Marko J. Tadjer, Karl D. Hobart, Tatyana I. Feygelson | 2016-10-11 |
| 9331163 | Transistor with diamond gate | Travis J. Anderson, Marko J. Tadjer, Tatyana I. Feygelson, Karl D. Hobart | 2016-05-03 |
| 9275998 | Inverted P-channel III-nitride field effect tansistor with Hole Carriers in the channel | Francis J. Kub, Travis J. Anderson, Karl D. Hobart | 2016-03-01 |
| 9236432 | Graphene base transistor with reduced collector area | Francis J. Kub, Travis J. Anderson | 2016-01-12 |
| 9196614 | Inverted III-nitride P-channel field effect transistor with hole carriers in the channel | Francis J. Kub, Travis J. Anderson, Karl D. Hobart | 2015-11-24 |
| 9196703 | Selective deposition of diamond in thermal vias | Karl D. Hobart, Tatyana I. Feygelson, Eugene I. Imhoff, Travis J. Anderson, Joshua D. Caldwell +8 more | 2015-11-24 |
| 9006791 | III-nitride P-channel field effect transistor with hole carriers in the channel | Francis J. Kub, Travis J. Anderson, Karl D. Hobart | 2015-04-14 |