Issued Patents All Time
Showing 1–3 of 3 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9464366 | Reduction of basal plane dislocations in epitaxial SiC | Rachael L. Myers-Ward, David Kurt Gaskill, Robert E. Stahlbush, Charles R. Eddy, Jr. | 2016-10-11 |
| 8652255 | Method of producing epitaxial layers with low basal plane dislocation concentrations | Robert E. Stahlbush, Kok-Keong Lew, Rachael L. Myers-Ward, David Kurt Gaskill, Charles R. Eddy, Jr. | 2014-02-18 |
| 8603243 | Tracking carbon to silicon ratio in situ during silicon carbide growth | Kok-Keong Lew, Rachael L. Myers-Ward, Charles R. Eddy, Jr., David Kurt Gaskill | 2013-12-10 |