| 6167834 |
Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
John M. White, Kam S. Law, Cissy Leung, Salvador P. Umotoy, Kenneth S. Collins +3 more |
2001-01-02 |
$117,838,000 |
| RE36623 |
Process for PECVD of silicon oxide using TEOS decomposition |
John M. White, Kam S. Law, Cissy Leung, Salvador P. Umotoy, Kenneth S. Collins +3 more |
2000-03-21 |
|
| 6040022 |
PECVD of compounds of silicon from silane and nitrogen |
Mei Chang, John M. White, Dan Maydan |
2000-03-21 |
$238,998,000 |
| 6020270 |
Bomine and iodine etch process for silicon and silicides |
Jerry Wong, Mei Chang, Alfred Mak, Dan Maydan |
2000-02-01 |
$104,078,000 |
| 5882165 |
Multiple chamber integrated process system |
Dan Maydan, Sasson Somekh, David Cheng, Masato Toshima, Isaac Harari +1 more |
1999-03-16 |
$34,969,000 |
| 5874362 |
Bromine and iodine etch process for silicon and silicides |
Jerry Wong, Mei Chang, Alfred Mak, Dan Maydan |
1999-02-23 |
$104,651,000 |
| 5871811 |
Method for protecting against deposition on a selected region of a substrate |
John M. White, Kam S. Law, Cissy Leung, Salvador P. Umotoy, Kenneth S. Collins +3 more |
1999-02-16 |
$63,876,000 |
| 5773100 |
PECVD of silicon nitride films |
Mei Chang, John M. White, Dan Maydan |
1998-06-30 |
$26,844,000 |
| 5755886 |
Apparatus for preventing deposition gases from contacting a selected region of a substrate during deposition processing |
John M. White, Kam S. Law, Cissy Leung, Salvador P. Umotoy, Kenneth S. Collins +3 more |
1998-05-26 |
$31,043,000 |
| 5362526 |
Plasma-enhanced CVD process using TEOS for depositing silicon oxide |
John M. White, Kam S. Law, Cissy Leung, Salvador P. Umotoy, Kenneth S. Collins +3 more |
1994-11-08 |
$22,807,000 |
| 5354715 |
Thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
John M. White, Kam S. Law, Cissy Leung, Salvador P. Umotoy, Kenneth S. Collins +3 more |
1994-10-11 |
$11,023,000 |
| 5354387 |
Boron phosphorus silicate glass composite layer on semiconductor wafer |
Peter Wai-Man Lee, Makoto Nagashima, Kazuto Fukuma, Tetsuya Sato |
1994-10-11 |
$11,023,000 |
| 5314845 |
Two step process for forming void-free oxide layer over stepped surface of semiconductor wafer |
Peter Wai-Man Lee, Makoto Nagashima, Kazuto Fukuma, Tatsuya Sato |
1994-05-24 |
$20,926,000 |
| 5300460 |
UHF/VHF plasma for use in forming integrated circuit structures on semiconductor wafers |
Kenneth S. Collins, Craig A. Roderick, Chan-Lon Yang, Dan Maydan |
1994-04-05 |
$43,028,000 |
| 5292393 |
Multichamber integrated process system |
Dan Maydan, Sasson Somekh, David Cheng, Masato Toshima, Isaac Harari +1 more |
1994-03-08 |
$14,461,000 |
| 5244841 |
Method for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositing |
Jeffrey Marks, Kam S. Law, Dan Maydan |
1993-09-14 |
$28,873,000 |
| 5219485 |
Materials and methods for etching silicides, polycrystalline silicon and polycides |
Mei Chang, T. K. Leong, deceased, Peter Leong |
1993-06-15 |
$8,505,000 |
| 5215619 |
Magnetic field-enhanced plasma etch reactor |
David Cheng, Dan Maydan, Sasson Somekh, Kenneth R. Stalder, Dana L. Andrews +4 more |
1993-06-01 |
$24,593,000 |
| 5213650 |
Apparatus for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer |
Lawrence Chung-Lai Lei, Mei Chang, Cissy Leung |
1993-05-25 |
$23,976,000 |
| 5210466 |
VHF/UHF reactor system |
Kenneth S. Collins, Craig A. Roderick, Chan-Lon Yang, Dan Maydan |
1993-05-11 |
$23,923,000 |
| 5204288 |
Method for planarizing an integrated circuit structure using low melting inorganic material |
Jeffrey Marks, Kam S. Law, Dan Maydan |
1993-04-20 |
$19,002,000 |
| 5166101 |
Method for forming a boron phosphorus silicate glass composite layer on a semiconductor wafer |
Peter Wai-Man Lee, Makoto Nagashima, Kazuto Fukuma, Tetsuya Sato |
1992-11-24 |
$17,878,000 |
| 5112435 |
Materials and methods for etching silicides, polycrystalline silicon and polycides |
Mei Cheng, Toung K. Leong, deceased |
1992-05-12 |
$4,643,000 |
| 5112776 |
Method for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositing |
Jeffrey Marks, Kam S. Law, Dan Mayden |
1992-05-12 |
$4,643,000 |
| 5075256 |
Process for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer |
Lawrence Chung-Lai Lei, Mei Chang, Cissy Leung |
1991-12-24 |
$6,723,000 |
