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Home › Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process

Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process

US Patent 6167834 · Granted Jan 2, 2001

Estimated economic value: $117,838,000 ⓘ

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