Issued Patents All Time
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7842931 | Extraction electrode manipulator | Shu Satoh, Manny Sieradzki | 2010-11-30 |
| 6167834 | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process | David N. Wang, John M. White, Kam S. Law, Cissy Leung, Salvador P. Umotoy +3 more | 2001-01-02 |
| RE36623 | Process for PECVD of silicon oxide using TEOS decomposition | David N. Wang, John M. White, Kam S. Law, Cissy Leung, Salvador P. Umotoy +3 more | 2000-03-21 |
| 5871811 | Method for protecting against deposition on a selected region of a substrate | David N. Wang, John M. White, Kam S. Law, Cissy Leung, Salvador P. Umotoy +3 more | 1999-02-16 |
| 5755886 | Apparatus for preventing deposition gases from contacting a selected region of a substrate during deposition processing | David N. Wang, John M. White, Kam S. Law, Cissy Leung, Salvador P. Umotoy +3 more | 1998-05-26 |
| 5362526 | Plasma-enhanced CVD process using TEOS for depositing silicon oxide | David N. Wang, John M. White, Kam S. Law, Cissy Leung, Salvador P. Umotoy +3 more | 1994-11-08 |
| 5354715 | Thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process | David N. Wang, John M. White, Kam S. Law, Cissy Leung, Salvador P. Umotoy +3 more | 1994-10-11 |
| 5000113 | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process | David N. Wang, John M. White, Kam S. Law, Cissy Leung, Salvador P. Umotoy +3 more | 1991-03-19 |
| 4892753 | Process for PECVD of silicon oxide using TEOS decomposition | David N. Wang, John M. White, Kam S. Law, Cissy Leung, Salvador P. Umotoy +3 more | 1990-01-09 |
| 4872947 | CVD of silicon oxide using TEOS decomposition and in-situ planarization process | David N. Wang, John M. White, Kam S. Law, Cissy Leung, Salvador P. Umotoy +3 more | 1989-10-10 |