Issued Patents All Time
Showing 1–25 of 25 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6251190 | Gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride | Alfred Mak, Kevin Lai, Steve Ghanayem, Thomas Wendling, Ping Jian | 2001-06-26 |
| 6206967 | Low resistivity W using B2H6 nucleation step | Alfred Mak, Kevin Lai, Dennis Sauvage | 2001-03-27 |
| 6167834 | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process | David N. Wang, John M. White, Kam S. Law, Salvador P. Umotoy, Kenneth S. Collins +3 more | 2001-01-02 |
| 6162715 | Method of forming gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride | Alfred Mak, Kevin Lai, Steve Ghanayem, Thomas Wendling, Ping Jian | 2000-12-19 |
| 6099904 | Low resistivity W using B.sub.2 H.sub.6 nucleation step | Alfred Mak, Kevin Lai, Dennis Sauvage | 2000-08-08 |
| RE36623 | Process for PECVD of silicon oxide using TEOS decomposition | David N. Wang, John M. White, Kam S. Law, Salvador P. Umotoy, Kenneth S. Collins +3 more | 2000-03-21 |
| 5871811 | Method for protecting against deposition on a selected region of a substrate | David N. Wang, John M. White, Kam S. Law, Salvador P. Umotoy, Kenneth S. Collins +3 more | 1999-02-16 |
| 5810936 | Plasma-inert cover and plasma cleaning process and apparatus employing same | Lawrence Chung-Lai Lei, Sasson Somekh | 1998-09-22 |
| 5755886 | Apparatus for preventing deposition gases from contacting a selected region of a substrate during deposition processing | David N. Wang, John M. White, Kam S. Law, Salvador P. Umotoy, Kenneth S. Collins +3 more | 1998-05-26 |
| 5705080 | Plasma-inert cover and plasma cleaning process | Lawrence Chung-Lai Lei, Sasson Somekh | 1998-01-06 |
| 5556476 | Controlling edge deposition on semiconductor substrates | Lawrence Chung-Lai Lei | 1996-09-17 |
| 5476548 | Reducing backside deposition in a substrate processing apparatus through the use of a shadow ring | Lawrence Chung-Lai Lei, Eric A. Englhardt, Ashok Sinha | 1995-12-19 |
| 5468298 | Bottom purge manifold for CVD tungsten process | Lawrence Chung-Lai Lei | 1995-11-21 |
| 5449410 | Plasma processing apparatus | Mei Chang | 1995-09-12 |
| 5362526 | Plasma-enhanced CVD process using TEOS for depositing silicon oxide | David N. Wang, John M. White, Kam S. Law, Salvador P. Umotoy, Kenneth S. Collins +3 more | 1994-11-08 |
| 5354715 | Thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process | David N. Wang, John M. White, Kam S. Law, Salvador P. Umotoy, Kenneth S. Collins +3 more | 1994-10-11 |
| 5332443 | Lift fingers for substrate processing apparatus | Sandy M. Chew, Shane D. Clark, Ron Rose, Dale R. DuBois, Alan F. Morrison +1 more | 1994-07-26 |
| 5213650 | Apparatus for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer | David N. Wang, Lawrence Chung-Lai Lei, Mei Chang | 1993-05-25 |
| 5201990 | Process for treating aluminum surfaces in a vacuum apparatus | Mei Chang, Ashok Sinha, Turgut Sahin, Alfred Mak | 1993-04-13 |
| 5075256 | Process for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer | David N. Wang, Lawrence Chung-Lai Lei, Mei Chang | 1991-12-24 |
| 5028565 | Process for CVD deposition of tungsten layer on semiconductor wafer | Mei Chang, David N. Wang, David Cheng | 1991-07-02 |
| 5000113 | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process | David N. Wang, John M. White, Kam S. Law, Salvador P. Umotoy, Kenneth S. Collins +3 more | 1991-03-19 |
| 4960488 | Reactor chamber self-cleaning process | Kam S. Law, Ching Chiang Tang, Kenneth S. Collins, Mei Chang, Jerry Wong +1 more | 1990-10-02 |
| 4892753 | Process for PECVD of silicon oxide using TEOS decomposition | David N. Wang, John M. White, Kam S. Law, Salvador P. Umotoy, Kenneth S. Collins +3 more | 1990-01-09 |
| 4872947 | CVD of silicon oxide using TEOS decomposition and in-situ planarization process | David N. Wang, John M. White, Kam S. Law, Salvador P. Umotoy, Kenneth S. Collins +3 more | 1989-10-10 |