| 6251190 |
Gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride |
Alfred Mak, Kevin Lai, Steve Ghanayem, Thomas Wendling, Ping Jian |
2001-06-26 |
| 6206967 |
Low resistivity W using B2H6 nucleation step |
Alfred Mak, Kevin Lai, Dennis Sauvage |
2001-03-27 |
| 6167834 |
Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
David N. Wang, John M. White, Kam S. Law, Salvador P. Umotoy, Kenneth S. Collins +3 more |
2001-01-02 |
| 6162715 |
Method of forming gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride |
Alfred Mak, Kevin Lai, Steve Ghanayem, Thomas Wendling, Ping Jian |
2000-12-19 |
| 6099904 |
Low resistivity W using B.sub.2 H.sub.6 nucleation step |
Alfred Mak, Kevin Lai, Dennis Sauvage |
2000-08-08 |
| RE36623 |
Process for PECVD of silicon oxide using TEOS decomposition |
David N. Wang, John M. White, Kam S. Law, Salvador P. Umotoy, Kenneth S. Collins +3 more |
2000-03-21 |
| 5871811 |
Method for protecting against deposition on a selected region of a substrate |
David N. Wang, John M. White, Kam S. Law, Salvador P. Umotoy, Kenneth S. Collins +3 more |
1999-02-16 |
| 5810936 |
Plasma-inert cover and plasma cleaning process and apparatus employing same |
Lawrence Chung-Lai Lei, Sasson Somekh |
1998-09-22 |
| 5755886 |
Apparatus for preventing deposition gases from contacting a selected region of a substrate during deposition processing |
David N. Wang, John M. White, Kam S. Law, Salvador P. Umotoy, Kenneth S. Collins +3 more |
1998-05-26 |
| 5705080 |
Plasma-inert cover and plasma cleaning process |
Lawrence Chung-Lai Lei, Sasson Somekh |
1998-01-06 |
| 5556476 |
Controlling edge deposition on semiconductor substrates |
Lawrence Chung-Lai Lei |
1996-09-17 |
| 5476548 |
Reducing backside deposition in a substrate processing apparatus through the use of a shadow ring |
Lawrence Chung-Lai Lei, Eric A. Englhardt, Ashok Sinha |
1995-12-19 |
| 5468298 |
Bottom purge manifold for CVD tungsten process |
Lawrence Chung-Lai Lei |
1995-11-21 |
| 5449410 |
Plasma processing apparatus |
Mei Chang |
1995-09-12 |
| 5362526 |
Plasma-enhanced CVD process using TEOS for depositing silicon oxide |
David N. Wang, John M. White, Kam S. Law, Salvador P. Umotoy, Kenneth S. Collins +3 more |
1994-11-08 |
| 5354715 |
Thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
David N. Wang, John M. White, Kam S. Law, Salvador P. Umotoy, Kenneth S. Collins +3 more |
1994-10-11 |
| 5332443 |
Lift fingers for substrate processing apparatus |
Sandy M. Chew, Shane D. Clark, Ron Rose, Dale R. DuBois, Alan F. Morrison +1 more |
1994-07-26 |
| 5213650 |
Apparatus for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer |
David N. Wang, Lawrence Chung-Lai Lei, Mei Chang |
1993-05-25 |
| 5201990 |
Process for treating aluminum surfaces in a vacuum apparatus |
Mei Chang, Ashok Sinha, Turgut Sahin, Alfred Mak |
1993-04-13 |
| 5075256 |
Process for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer |
David N. Wang, Lawrence Chung-Lai Lei, Mei Chang |
1991-12-24 |
| 5028565 |
Process for CVD deposition of tungsten layer on semiconductor wafer |
Mei Chang, David N. Wang, David Cheng |
1991-07-02 |
| 5000113 |
Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
David N. Wang, John M. White, Kam S. Law, Salvador P. Umotoy, Kenneth S. Collins +3 more |
1991-03-19 |
| 4960488 |
Reactor chamber self-cleaning process |
Kam S. Law, Ching Chiang Tang, Kenneth S. Collins, Mei Chang, Jerry Wong +1 more |
1990-10-02 |
| 4892753 |
Process for PECVD of silicon oxide using TEOS decomposition |
David N. Wang, John M. White, Kam S. Law, Salvador P. Umotoy, Kenneth S. Collins +3 more |
1990-01-09 |
| 4872947 |
CVD of silicon oxide using TEOS decomposition and in-situ planarization process |
David N. Wang, John M. White, Kam S. Law, Salvador P. Umotoy, Kenneth S. Collins +3 more |
1989-10-10 |