| 10167812 |
Radiation thermal absorber based on characteristic absorption spectrum, and stirling engine and operation method thereof |
Gang Xiao, Min Qiu, Mingjiang Ni, Qiang Li, Zhongyang Luo +1 more |
2019-01-01 |
|
| 7972663 |
Method and apparatus for forming a high quality low temperature silicon nitride layer |
Errol Antonio C. Sanchez, Aihua Chen |
2011-07-05 |
$5,297,000 |
| 7745329 |
Tungsten nitride atomic layer deposition processes |
Ulrich Kroemer, Lee Luo, Aihua Chen, Ming Li |
2010-06-29 |
$7,165,000 |
| 7658800 |
Gas distribution assembly for use in a semiconductor work piece processing reactor |
Aihua Chen, Henry Ho, Gerald Yin, Qing Lv, Li Fu |
2010-02-09 |
|
| 7611976 |
Gate electrode dopant activation method for semiconductor manufacturing |
Yi Ma, Khaled Ahmed, Kevin Cunningham, Robert C. McIntosh, Abhilash J. Mayur +6 more |
2009-11-03 |
$16,291,000 |
| 7429516 |
Tungsten nitride atomic layer deposition processes |
Ulrich Kroemer, Lee Luo, Aihua Chen, Ming Li |
2008-09-30 |
$10,282,000 |
| 7365029 |
Method for silicon nitride chemical vapor deposition |
R. Suryanarayanan Iyer, Sean M. Seutter, Sanjeev Tandon, Errol Antonio C. Sanchez |
2008-04-29 |
$20,360,000 |
| 7335266 |
Method of forming a controlled and uniform lightly phosphorous doped silicon film |
Li Fu, Sheeba J. Panayil, Christopher Quentin, Lee Luo, Aihua Chen +1 more |
2008-02-26 |
$21,345,000 |
| 7265036 |
Deposition of nano-crystal silicon using a single wafer chamber |
Sheeba J. Panayil, Ming Li, Jonathan Pickering |
2007-09-04 |
$16,959,000 |
| 7250268 |
Assay for measuring IκB kinase activity and identifying IκB kinase modulators |
James Burke |
2007-07-31 |
$61,271,000 |
| 7172792 |
Method for forming a high quality low temperature silicon nitride film |
Errol Antonio C. Sanchez, Aihua Chen |
2007-02-06 |
$48,752,000 |
| 7115499 |
Cyclical deposition of tungsten nitride for metal oxide gate electrode |
Ulrich Kroemer, Lee Luo, Aihua Chen, Ming Li |
2006-10-03 |
$12,847,000 |
| 7078302 |
Gate electrode dopant activation method for semiconductor manufacturing including a laser anneal |
Yi Ma, Khaled Ahmed, Kevin Cunningham, Robert C. McIntosh, Abhilash J. Mayur +6 more |
2006-07-18 |
$11,393,000 |
| 6991999 |
Bi-layer silicon film and method of fabrication |
Li Fu, Luo Lee, Steven Chen, Errol Antonio C. Sanchez |
2006-01-31 |
$13,979,000 |
| 6982214 |
Method of forming a controlled and uniform lightly phosphorous doped silicon film |
Li Fu, Sheeba J. Panayil, Christopher Quentin, Lee Luo, Aihua Chen +1 more |
2006-01-03 |
$78,745,000 |
| 6833161 |
Cyclical deposition of tungsten nitride for metal oxide gate electrode |
Ulrich Kroemer, Lee Luo, Aihua Chen, Ming Li |
2004-12-21 |
$24,351,000 |
| 6802906 |
Emissivity-change-free pumping plate kit in a single wafer chamber |
Xiaoliang Jin, Lee Luo, Henry Ho, Steven Chen |
2004-10-12 |
$28,243,000 |
| 6726955 |
Method of controlling the crystal structure of polycrystalline silicon |
Steven Chen, Lee Luo, Errol Antonio C. Sanchez |
2004-04-27 |
$41,702,000 |
| 6582522 |
Emissivity-change-free pumping plate kit in a single wafer chamber |
Lee Luo, Henry Ho, Binh Tran, Alexander Tam, Errol Antonio C. Sanchez +2 more |
2003-06-24 |
$19,441,000 |
| 6559039 |
Doped silicon deposition process in resistively heated single wafer chamber |
Lee Luo, Steven Chen, Errol Antonio C. Sanchez, Xianzhi Tao, Zoran Dragojlovic +1 more |
2003-05-06 |
$19,934,000 |
| 6559074 |
Method of forming a silicon nitride layer on a substrate |
Steven Chen, Xianzhi Tao, Lee Luo, Kegang Huang, Sang-Hoon Ahn |
2003-05-06 |
$19,934,000 |
| 6555183 |
Plasma treatment of a titanium nitride film formed by chemical vapor deposition |
Ming Xi, Zvi Lando, Mei Chang |
2003-04-29 |
$17,791,000 |
| 6548402 |
Method of depositing a thick titanium nitride film |
Ming Xi, Frederick Wu, Ramanujapuram A. Srinivas, Yehuda Demayo, Zvi Lando +2 more |
2003-04-15 |
$39,567,000 |
| 6524952 |
Method of forming a titanium silicide layer on a substrate |
Ramanujapuram A. Srinivas, Brian Metzger, Frederick Wu |
2003-02-25 |
$21,067,000 |
| 6488776 |
Method and apparatus for forming insitu boron doped polycrystalline and amorphous silicon films |
— |
2002-12-03 |
$24,582,000 |
