Issued Patents All Time
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6921727 | Method for modifying dielectric characteristics of dielectric layers | Kang-Lie Chiang, Mahmoud Dahimene, Xiaoye Zhao, Yan Ye, Gerardo Delgadino +2 more | 2005-07-26 |
| 6849193 | Highly selective process for etching oxide over nitride using hexafluorobutadiene | Joseph P. Caulfield, Hongqing Shan, Ruiping Wang, Gerald Yin | 2005-02-01 |
| 6800213 | Precision dielectric etch using hexafluorobutadiene | Ji Ding, Hidehiro Kojiri, Yoshio Ishikawa, Keiji Horioka, Ruiping Wang +1 more | 2004-10-05 |
| 6797189 | Enhancement of silicon oxide etch rate and nitride selectivity using hexafluorobutadiene or other heavy perfluorocarbon | Joseph P. Caulfield, Hongqing Shan, Michael R. Rice, Kenneth S. Collins, Chunshi Cui | 2004-09-28 |
| 6762127 | Etch process for dielectric materials comprising oxidized organo silane materials | Yves Pierre Boiteux, Hui Chen, Ivano Gregoratto, Chang-Lin Hsieh, Sum-Yee Betty Tang | 2004-07-13 |
| 6602434 | Process for etching oxide using hexafluorobutadiene or related fluorocarbons and manifesting a wide process window | Joseph P. Caulfield, Hongqing Shan, Ruiping Wang, Gerald Yin | 2003-08-05 |
| 6544429 | Enhancement of silicon oxide etch rate and substrate selectivity with xenon addition | Joseph P. Caulfield, Hongchin Shan, Kenneth S. Collins, Chunshi Cui, Michael R. Rice | 2003-04-08 |
| 6432318 | Dielectric etch process reducing striations and maintaining critical dimensions | Ji Ding, Hidehiro Kojiri, Yoshio Ishikawa, Keiji Horioka, Ruiping Wang +1 more | 2002-08-13 |
| 6387287 | Process for etching oxide using a hexafluorobutadiene and manifesting a wide process window | Joseph P. Caulfield, Hongqing Shan, Ruiping Wang, Gerald Yin | 2002-05-14 |
| 6380096 | In-situ integrated oxide etch process particularly useful for copper dual damascene | Joseph P. Caulfield, Sum-Yee Betty Tang, Jian Ding, Tianzong Xu | 2002-04-30 |