HH

Hoiman Hung

Applied Materials: 6 patents #1,918 of 7,310Top 30%
Overall (All Time): #523,041 of 4,157,543Top 15%
10
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
6921727 Method for modifying dielectric characteristics of dielectric layers Kang-Lie Chiang, Mahmoud Dahimene, Xiaoye Zhao, Yan Ye, Gerardo Delgadino +2 more 2005-07-26
6849193 Highly selective process for etching oxide over nitride using hexafluorobutadiene Joseph P. Caulfield, Hongqing Shan, Ruiping Wang, Gerald Yin 2005-02-01
6800213 Precision dielectric etch using hexafluorobutadiene Ji Ding, Hidehiro Kojiri, Yoshio Ishikawa, Keiji Horioka, Ruiping Wang +1 more 2004-10-05
6797189 Enhancement of silicon oxide etch rate and nitride selectivity using hexafluorobutadiene or other heavy perfluorocarbon Joseph P. Caulfield, Hongqing Shan, Michael R. Rice, Kenneth S. Collins, Chunshi Cui 2004-09-28
6762127 Etch process for dielectric materials comprising oxidized organo silane materials Yves Pierre Boiteux, Hui Chen, Ivano Gregoratto, Chang-Lin Hsieh, Sum-Yee Betty Tang 2004-07-13
6602434 Process for etching oxide using hexafluorobutadiene or related fluorocarbons and manifesting a wide process window Joseph P. Caulfield, Hongqing Shan, Ruiping Wang, Gerald Yin 2003-08-05
6544429 Enhancement of silicon oxide etch rate and substrate selectivity with xenon addition Joseph P. Caulfield, Hongchin Shan, Kenneth S. Collins, Chunshi Cui, Michael R. Rice 2003-04-08
6432318 Dielectric etch process reducing striations and maintaining critical dimensions Ji Ding, Hidehiro Kojiri, Yoshio Ishikawa, Keiji Horioka, Ruiping Wang +1 more 2002-08-13
6387287 Process for etching oxide using a hexafluorobutadiene and manifesting a wide process window Joseph P. Caulfield, Hongqing Shan, Ruiping Wang, Gerald Yin 2002-05-14
6380096 In-situ integrated oxide etch process particularly useful for copper dual damascene Joseph P. Caulfield, Sum-Yee Betty Tang, Jian Ding, Tianzong Xu 2002-04-30