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Yan Ye — 118 Patents

Applied Materials: 112 patents #30 of 7,310Top 1%

OTOmnivision Technologies: 1 patents #379 of 604Top 65%

TCTsann Kuen (Zhangzhou) Enterprise Co.: 1 patents #48 of 130Top 40%

Overall (All Time): #10,312 of 4,157,543Top 1%

118 Patents All Time

Yan Ye has been granted 118 US patents while listed as an inventor at Applied Materials. The first was granted in 1995 and the most recent in April 2025. Yan Ye ranks #10,312 of 4,157,543 US inventors in our database (top 0.25%). Patent records list Yan Ye in Singapore, CA, SG.

Patents per Year

Issued Patents All Time

Showing 1–25 of 118 patents

Patent #	Title	Co-Inventors	Date	Approx Value ⓘ
12273623	Hybrid dynamic vision sensor and CMOS device for motion compensation	Zhongyang Huang, Guansong Liu	2025-04-08
10629581	Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases	—	2020-04-21	$32,079,000
9871124	Method of IGZO and ZnO TFT fabrication with PECVD SiO2 passivation	Jrjyan Jerry CHEN, Soo Young Choi, Dong-Kil Yim	2018-01-16	$25,242,000
9624597	Methods and apparatuses for delaminating process pieces	—	2017-04-18
9553195	Method of IGZO and ZNO TFT fabrication with PECVD SiO2 passivation	Jrjyan Jerry CHEN, Soo Young Choi, Dong-Kil Yim	2017-01-24	$20,961,000
9396940	Thin film semiconductors made through low temperature process	—	2016-07-19	$14,320,000
9385239	Buffer layers for metal oxide semiconductors for TFT	Kurtis Leschkies, Steven Verhaverbeke, Robert Jan Visser, John M. White, Dong-Kil Yim	2016-07-05	$10,411,000
8980066	Thin film metal oxynitride semiconductors	—	2015-03-17	$8,353,000
D723858	Coffee machine	—	2015-03-10
8975625	TFT with insert in passivation layer or etch stop layer	Harvey YOU	2015-03-10	$17,071,000
8840763	Methods for stable process in a reactive sputtering process using zinc or doped zinc target	—	2014-09-23	$28,245,000
8809132	Capping layers for metal oxynitride TFTs	—	2014-08-19	$15,864,000
8669552	Offset electrode TFT structure	—	2014-03-11	$12,153,000
8614007	Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases	—	2013-12-24	$49,045,000
8574411	Reactive sputtering chamber with gas distribution tubes	John M. White, Akihiro Hosokawa	2013-11-05	$51,301,000
8435843	Treatment of gate dielectric for making high performance metal oxide and metal oxynitride thin film transistors	—	2013-05-07	$10,477,000
8398826	Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases	—	2013-03-19	$6,887,000
8349669	Thin film transistors using multiple active channel layers	—	2013-01-08	$7,807,000
8298879	Methods of fabricating metal oxide or metal oxynitride TFTS using wet process for source-drain metal etch	—	2012-10-30
8294148	Thin film transistors using thin film semiconductor materials	—	2012-10-23	$4,153,000
8279577	Substrate support having fluid channel	Andrew Nguyen, Wing Cheng, Hiroji Hanawa, Semyon L. Kats, Kartik Ramaswamy +4 more	2012-10-02	$19,868,000
8258511	Thin film transistors using multiple active channel layers	—	2012-09-04	$11,311,000
8236105	Apparatus for controlling gas flow in a semiconductor substrate processing chamber	Kallol Bera, Heeyeop Chae, Hamid Tavassoli	2012-08-07	$10,850,000
8143093	Process to make metal oxide thin film transistor array with etch stopping layer	—	2012-03-27	$13,154,000
8101949	Treatment of gate dielectric for making high performance metal oxide and metal oxynitride thin film transistors	—	2012-01-24	$14,249,000