| 12513984 |
Double-sided integrated circuit transistor structures with depopulated bottom channel regions |
Varun MISHRA, Peng Zheng, Tahir Ghani, Harold W. Kennel, Mauro J. Kobrinsky |
2025-12-30 |
|
| 12328864 |
3D 1T1C stacked dram structure and method to fabricate |
Sean T. Ma, Abhishek A. Sharma |
2025-06-10 |
|
| 12288810 |
Backside contact structures and fabrication for metal on both sides of devices |
Patrick Morrow, Rishabh Mehandru, Kimin Jun |
2025-04-29 |
|
| 12288813 |
Gate-all-around integrated circuit structures having insulator fin on insulator substrate |
Rishabh Mehandru, Cory E. Weber, Willy Rachmady, Varun MISHRA |
2025-04-29 |
|
| 12288807 |
Amorphization and regrowth of source-drain regions from the bottom-side of a semiconductor assembly |
Rishabh Mehandru, Willy Rachmady, Harold W. Kennel, Tahir Ghani |
2025-04-29 |
|
| 12255137 |
Sideways vias in isolation areas to contact interior layers in stacked devices |
Ehren Mannebach, Hui Jae Yoo, Patrick Morrow, Anh Phan, Willy Rachmady +3 more |
2025-03-18 |
|
| 12224202 |
Forming an oxide volume within a fin |
Cheng-Ying Huang, Gilbert Dewey, Jack T. Kavalieros, Ehren Mannebach, Patrick Morrow +3 more |
2025-02-11 |
|
| 12199098 |
Fin doping and integrated circuit structures resulting therefrom |
Cory E. Weber, Stephen M. Cea, Leonard C. Pipes, Seahee Hwangbo, Rishabh Mehandru +3 more |
2025-01-14 |
|
| 12148806 |
Stacked source-drain-gate connection and process for forming such |
Ehren Mannebach, Hui Jae Yoo, Patrick Morrow, Anh Phan, Willy Rachmady +2 more |
2024-11-19 |
$25,575,000 |
| 12107085 |
Interconnect techniques for electrically connecting source/drain regions of stacked transistors |
Gilbert Dewey, Cheng-Ying Huang, Christopher J. Jezewski, Ehren Mannebach, Rishabh Mehandru +4 more |
2024-10-01 |
$20,560,000 |
| 12100623 |
Vertically stacked finFETs and shared gate patterning |
Sean T. Ma, Justin R. Weber, Rishabh Mehandru, Stephen M. Cea, Patrick Morrow +1 more |
2024-09-24 |
$33,787,000 |
| 12080605 |
Backside contacts for semiconductor devices |
Ehren Mannebach, Anh Phan, Richard E. Schenker, Stephanie A. Bojarski, Willy Rachmady +4 more |
2024-09-03 |
$14,017,000 |
| 12057494 |
Stacked transistors |
Patrick Morrow, Rishabh Mehandru |
2024-08-06 |
$17,070,000 |
| 12051723 |
PN-body-tied field effect transistors |
Kerryann Marrietta Foley, Sayed Hasan, Patrick Morrow, Willy Rachmady |
2024-07-30 |
$27,313,000 |
| 12033896 |
Isolation wall stressor structures to improve channel stress and their methods of fabrication |
Christopher J. Jezewski, Willy Rachmady, Rishabh Mehandru, Gilbert Dewey, Anh Phan |
2024-07-09 |
$24,938,000 |
| 12020929 |
Epitaxial layer with substantially parallel sides |
Cheng-Ying Huang, Gilbert Dewey, Jack T. Kavalieros, Ehren Mannebach, Patrick Morrow +3 more |
2024-06-25 |
$22,163,000 |
| 11996408 |
Leave-behind protective layer having secondary purpose |
Anh Phan, Ehren Mannebach, Cheng-Ying Huang, Stephanie A. Bojarski, Gilbert Dewey +2 more |
2024-05-28 |
$30,739,000 |
| 11942416 |
Sideways vias in isolation areas to contact interior layers in stacked devices |
Ehren Mannebach, Hui Jae Yoo, Patrick Morrow, Anh Phan, Willy Rachmady +3 more |
2024-03-26 |
$33,708,000 |
| 11935933 |
Backside contact structures and fabrication for metal on both sides of devices |
Patrick Morrow, Rishabh Mehandru, Kimin Jun |
2024-03-19 |
$28,784,000 |
| 11935891 |
Non-silicon N-type and P-type stacked transistors for integrated circuit devices |
Gilbert Dewey, Patrick Morrow, Ravi Pillarisetty, Rishabh Mehandru, Cheng-Ying Huang +1 more |
2024-03-19 |
$28,784,000 |
| 11916118 |
Stacked source-drain-gate connection and process for forming such |
Ehren Mannebach, Hui Jae Yoo, Patrick Morrow, Anh Phan, Willy Rachmady +2 more |
2024-02-27 |
$28,450,000 |
| 11894372 |
Stacked trigate transistors with dielectric isolation and process for forming such |
Willy Rachmady, Cheng-Ying Huang, Gilbert Dewey, Patrick Morrow, Anh Phan +2 more |
2024-02-06 |
$35,892,000 |
| 11894262 |
Back side processing of integrated circuit structures to form insulation structure between adjacent transistor structures |
Rishabh Mehandru, Patrick Morrow |
2024-02-06 |
$35,892,000 |
| 11869894 |
Metallization structures for stacked device connectivity and their methods of fabrication |
Anh Phan, Patrick Morrow, Willy Rachmady, Gilbert Dewey, Jessica M. Torres +6 more |
2024-01-09 |
$30,329,000 |
| 11862702 |
Gate-all-around integrated circuit structures having insulator FIN on insulator substrate |
Rishabh Mehandru, Cory E. Weber, Willy Rachmady, Varun MISHRA |
2024-01-02 |
$30,016,000 |
