Issued Patents All Time
Showing 25 most recent of 78 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12426342 | Low germanium, high boron silicon rich capping layer for PMOS contact resistance thermal stability | Debaleena Nandi, Cory Bomberger, Gilbert Dewey, Anand S. Murthy, Mauro J. Kobrinsky +6 more | 2025-09-23 |
| 12288807 | Amorphization and regrowth of source-drain regions from the bottom-side of a semiconductor assembly | Aaron D. Lilak, Rishabh Mehandru, Willy Rachmady, Tahir Ghani | 2025-04-29 |
| 12255234 | Integrated circuit structures having germanium-based channels | Siddharth Chouksey, Glenn A. Glass, Anand S. Murthy, Jack T. Kavalieros, Tahir Ghani +2 more | 2025-03-18 |
| 12191349 | Reducing off-state leakage in semiconductor devices | Dipanjan Basu, Cory E. Weber, Justin R. Weber, Sean T. Ma, Seung Hoon Sung +3 more | 2025-01-07 |
| 12068319 | High performance semiconductor oxide material channel regions for NMOS | Gilbert Dewey, Willy Rachmady, Jack T. Kavalieros, Cheng-Ying Huang, Matthew V. Metz +3 more | 2024-08-20 |
| 11990476 | Semiconductor nanowire device having (111)-plane channel sidewalls | Cory E. Weber, Willy Rachmady, Gilbert Dewey | 2024-05-21 |
| 11973143 | Source or drain structures for germanium N-channel devices | Ryan Keech, Benjamin Chu-Kung, Subrina RAFIQUE, Devin Merrill, Ashish Agrawal +4 more | 2024-04-30 |
| 11929435 | Ferroelectric gate stack for band-to-band tunneling reduction | Gilbert Dewey, Willy Rachmady, Jack T. Kavalieros, Cheng-Ying Huang, Matthew V. Metz +2 more | 2024-03-12 |
| 11923421 | Integrated circuit structures having germanium-based channels | Siddharth Chouksey, Glenn A. Glass, Anand S. Murthy, Jack T. Kavalieros, Tahir Ghani +2 more | 2024-03-05 |
| 11798991 | Amorphization and regrowth of source-drain regions from the bottom-side of a semiconductor assembly | Aaron D. Lilak, Rishabh Mehandru, Willy Rachmady, Tahir Ghani | 2023-10-24 |
| 11784239 | Subfin leakage suppression using fixed charge | Sean T. Ma, Aaron D. Lilak, Justin R. Weber, Willy Rachmady, Gilbert Dewey +5 more | 2023-10-10 |
| 11764275 | Indium-containing fin of a transistor device with an indium-rich core | Chandra S. Mohapatra, Glenn A. Glass, Anand S. Murthy, Willy Rachmady, Gilbert Dewey +4 more | 2023-09-19 |
| 11756998 | Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) | Cheng-Ying Huang, Tahir Ghani, Jack T. Kavalieros, Anand S. Murthy, Gilbert Dewey +4 more | 2023-09-12 |
| 11695081 | Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) | Sean T. Ma, Nicholas G. Minutillo, Cheng-Ying Huang, Tahir Ghani, Jack T. Kavalieros +4 more | 2023-07-04 |
| 11637185 | Contact stacks to reduce hydrogen in semiconductor devices | Justin R. Weber, Abhishek A. Sharma, Christopher J. Jezewski, Matthew V. Metz, Tahir Ghani +4 more | 2023-04-25 |
| 11581406 | Method of fabricating CMOS FinFETs by selectively etching a strained SiGe layer | Stephen M. Cea, Roza Kotlyar, Anand S. Murthy, Glenn A. Glass, Kelin J. Kuhn +1 more | 2023-02-14 |
| 11557658 | Transistors with high density channel semiconductor over dielectric material | Gilbert Dewey, Sean T. Ma, Tahir Ghani, Willy Rachmady, Cheng-Ying Huang +3 more | 2023-01-17 |
| 11515420 | Contacts to n-type transistors with X-valley layer over L-valley channels | Dax M. Crum, Cory E. Weber, Rishabh Mehandru, Benjamin Chu-Kung | 2022-11-29 |
| 11508577 | Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) | Gilbert Dewey, Matthew V. Metz, Willy Rachmady, Sean T. Ma, Nicholas G. Minutillo +4 more | 2022-11-22 |
| 11476338 | Aluminum indium phosphide subfin germanium channel transistors | Matthew V. Metz, Willy Rachmady, Van H. Le, Benjamin Chu-Kung, Jack T. Kavalieros +1 more | 2022-10-18 |
| 11469323 | Ferroelectric gate stack for band-to-band tunneling reduction | Gilbert Dewey, Willy Rachmady, Jack T. Kavalieros, Cheng-Ying Huang, Matthew V. Metz +2 more | 2022-10-11 |
| 11462568 | Stacked thin film transistors | Aaron D. Lilak, Justin R. Weber, Willy Rachmady, Gilbert Dewey, Van H. Le +3 more | 2022-10-04 |
| 11444159 | Field effect transistors with wide bandgap materials | Sean T. Ma, Gilbert Dewey, Willy Rachmady, Matthew V. Metz, Cheng-Ying Huang +3 more | 2022-09-13 |
| 11437472 | Integrated circuit structures having germanium-based channels | Siddharth Chouksey, Glenn A. Glass, Anand S. Murthy, Jack T. Kavalieros, Tahir Ghani +2 more | 2022-09-06 |
| 11398478 | Semiconductor nanowire device having (111)-plane channel sidewalls | Cory E. Weber, Willy Rachmady, Gilbert Dewey | 2022-07-26 |