| 12513984 |
Double-sided integrated circuit transistor structures with depopulated bottom channel regions |
Varun MISHRA, Peng Zheng, Aaron D. Lilak, Tahir Ghani, Mauro J. Kobrinsky |
2025-12-30 |
|
| 12439669 |
Co-deposition of titanium and silicon for improved silicon germanium source and drain contacts |
Debaleena Nandi, Chi Choi, Gilbert Dewey, Omair Saadat, Jitendra Kumar Jha +4 more |
2025-10-07 |
|
| 12426342 |
Low germanium, high boron silicon rich capping layer for PMOS contact resistance thermal stability |
Debaleena Nandi, Cory Bomberger, Gilbert Dewey, Anand S. Murthy, Mauro J. Kobrinsky +6 more |
2025-09-23 |
|
| 12288807 |
Amorphization and regrowth of source-drain regions from the bottom-side of a semiconductor assembly |
Aaron D. Lilak, Rishabh Mehandru, Willy Rachmady, Tahir Ghani |
2025-04-29 |
|
| 12255234 |
Integrated circuit structures having germanium-based channels |
Siddharth Chouksey, Glenn A. Glass, Anand S. Murthy, Jack T. Kavalieros, Tahir Ghani +2 more |
2025-03-18 |
|
| 12191349 |
Reducing off-state leakage in semiconductor devices |
Dipanjan Basu, Cory E. Weber, Justin R. Weber, Sean T. Ma, Seung Hoon Sung +3 more |
2025-01-07 |
|
| 12068319 |
High performance semiconductor oxide material channel regions for NMOS |
Gilbert Dewey, Willy Rachmady, Jack T. Kavalieros, Cheng-Ying Huang, Matthew V. Metz +3 more |
2024-08-20 |
$20,163,000 |
| 11990476 |
Semiconductor nanowire device having (111)-plane channel sidewalls |
Cory E. Weber, Willy Rachmady, Gilbert Dewey |
2024-05-21 |
$18,840,000 |
| 11973143 |
Source or drain structures for germanium N-channel devices |
Ryan Keech, Benjamin Chu-Kung, Subrina RAFIQUE, Devin Merrill, Ashish Agrawal +4 more |
2024-04-30 |
$26,151,000 |
| 11929435 |
Ferroelectric gate stack for band-to-band tunneling reduction |
Gilbert Dewey, Willy Rachmady, Jack T. Kavalieros, Cheng-Ying Huang, Matthew V. Metz +2 more |
2024-03-12 |
$37,196,000 |
| 11923421 |
Integrated circuit structures having germanium-based channels |
Siddharth Chouksey, Glenn A. Glass, Anand S. Murthy, Jack T. Kavalieros, Tahir Ghani +2 more |
2024-03-05 |
$29,696,000 |
| 11798991 |
Amorphization and regrowth of source-drain regions from the bottom-side of a semiconductor assembly |
Aaron D. Lilak, Rishabh Mehandru, Willy Rachmady, Tahir Ghani |
2023-10-24 |
$20,059,000 |
| 11784239 |
Subfin leakage suppression using fixed charge |
Sean T. Ma, Aaron D. Lilak, Justin R. Weber, Willy Rachmady, Gilbert Dewey +5 more |
2023-10-10 |
$20,947,000 |
| 11764275 |
Indium-containing fin of a transistor device with an indium-rich core |
Chandra S. Mohapatra, Glenn A. Glass, Anand S. Murthy, Willy Rachmady, Gilbert Dewey +4 more |
2023-09-19 |
$20,015,000 |
| 11756998 |
Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) |
Cheng-Ying Huang, Tahir Ghani, Jack T. Kavalieros, Anand S. Murthy, Gilbert Dewey +4 more |
2023-09-12 |
$19,004,000 |
| 11695081 |
Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) |
Sean T. Ma, Nicholas G. Minutillo, Cheng-Ying Huang, Tahir Ghani, Jack T. Kavalieros +4 more |
2023-07-04 |
|
| 11637185 |
Contact stacks to reduce hydrogen in semiconductor devices |
Justin R. Weber, Abhishek A. Sharma, Christopher J. Jezewski, Matthew V. Metz, Tahir Ghani +4 more |
2023-04-25 |
$19,274,000 |
| 11581406 |
Method of fabricating CMOS FinFETs by selectively etching a strained SiGe layer |
Stephen M. Cea, Roza Kotlyar, Anand S. Murthy, Glenn A. Glass, Kelin J. Kuhn +1 more |
2023-02-14 |
|
| 11557658 |
Transistors with high density channel semiconductor over dielectric material |
Gilbert Dewey, Sean T. Ma, Tahir Ghani, Willy Rachmady, Cheng-Ying Huang +3 more |
2023-01-17 |
$13,997,000 |
| 11515420 |
Contacts to n-type transistors with X-valley layer over L-valley channels |
Dax M. Crum, Cory E. Weber, Rishabh Mehandru, Benjamin Chu-Kung |
2022-11-29 |
$14,086,000 |
| 11508577 |
Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) |
Gilbert Dewey, Matthew V. Metz, Willy Rachmady, Sean T. Ma, Nicholas G. Minutillo +4 more |
2022-11-22 |
$12,862,000 |
| 11476338 |
Aluminum indium phosphide subfin germanium channel transistors |
Matthew V. Metz, Willy Rachmady, Van H. Le, Benjamin Chu-Kung, Jack T. Kavalieros +1 more |
2022-10-18 |
$11,317,000 |
| 11469323 |
Ferroelectric gate stack for band-to-band tunneling reduction |
Gilbert Dewey, Willy Rachmady, Jack T. Kavalieros, Cheng-Ying Huang, Matthew V. Metz +2 more |
2022-10-11 |
$16,542,000 |
| 11462568 |
Stacked thin film transistors |
Aaron D. Lilak, Justin R. Weber, Willy Rachmady, Gilbert Dewey, Van H. Le +3 more |
2022-10-04 |
$13,460,000 |
| 11444159 |
Field effect transistors with wide bandgap materials |
Sean T. Ma, Gilbert Dewey, Willy Rachmady, Matthew V. Metz, Cheng-Ying Huang +3 more |
2022-09-13 |
$14,653,000 |
