| 12484272 |
Source or drain structures with relatively high germanium content |
Anand S. Murthy, Biswajeet Guha, Anupama Bowonder, Tahir Ghani |
2025-11-25 |
|
| 12439640 |
Reduced contact resistivity with PMOS germanium and silicon doped with boron gate all around transistors |
Anand S. Murthy, Rushabh Shah, Kenneth A. Cook, Anupama Bowonder |
2025-10-07 |
|
| 12426342 |
Low germanium, high boron silicon rich capping layer for PMOS contact resistance thermal stability |
Debaleena Nandi, Gilbert Dewey, Anand S. Murthy, Mauro J. Kobrinsky, Rushabh SHAH +6 more |
2025-09-23 |
|
| 12388011 |
Top gate recessed channel CMOS thin film transistor and methods of fabrication |
Gilbert Dewey, Ryan Keech, Cheng-Ying Huang, Ashish Agrawal, Willy Rachmady +1 more |
2025-08-12 |
|
| 12272727 |
Gate-all-around integrated circuit structures having embedded GeSnB source or drain structures |
Anand S. Murthy, Susmita Ghose, Siddharth Chouksey |
2025-04-08 |
|
| 12237420 |
Fin smoothing and integrated circuit structures resulting therefrom |
Anand S. Murthy, Tahir Ghani, Anupama Bowonder |
2025-02-25 |
|
| 12159901 |
Gate-all-around integrated circuit structures having source or drain structures with epitaxial nubs |
Anand S. Murthy, Mark Bohr, Tahir Ghani, Biswajeet Guha |
2024-12-03 |
$28,395,000 |
| 12027585 |
Source or drain structures with low resistivity |
Anand S. Murthy, Suresh Vishwanath |
2024-07-02 |
$27,114,000 |
| 12027417 |
Source or drain structures with high germanium concentration capping layer |
Suresh Vishwanath, Yulia Tolstova, Pratik A. Patel, Szuya S. Liao, Anand S. Murthy |
2024-07-02 |
$27,114,000 |
| 12021149 |
Fin smoothing and integrated circuit structures resulting therefrom |
Anand S. Murthy, Tahir Ghani, Anupama Bowonder |
2024-06-25 |
$22,163,000 |
| 11996404 |
Three-dimensional integrated circuits (3DICs) including bottom gate MOS transistors with monocrystalline channel material |
Cheng-Ying Huang, Gilbert Dewey, Ashish Agrawal, Kimin Jun, Willy Rachmady +5 more |
2024-05-28 |
$30,739,000 |
| 11990513 |
Gate-all-around integrated circuit structures having embedded GeSnB source or drain structures |
Anand S. Murthy, Susmita Ghose, Siddharth Chouksey |
2024-05-21 |
$18,840,000 |
| 11984449 |
Channel structures with sub-fin dopant diffusion blocking layers |
Anand S. Murthy, Stephen M. Cea, Biswajeet Guha, Anupama Bowonder, Tahir Ghani |
2024-05-14 |
$33,809,000 |
| 11978784 |
Gate-all-around integrated circuit structures having germanium nanowire channel structures |
Anand S. Murthy, Susmita Ghose, Zachary Geiger |
2024-05-07 |
$26,756,000 |
| 11929320 |
Top gate recessed channel CMOS thin film transistor in the back end of line and methods of fabrication |
Gilbert Dewey, Ryan Keech, Cheng-Ying Huang, Ashish Agrawal, Willy Rachmady +1 more |
2024-03-12 |
$37,196,000 |
| 11887988 |
Thin film transistor structures with regrown source and drain |
Ashish Agrawal, Jack T. Kavalieros, Anand S. Murthy, Gilbert Dewey, Matthew V. Metz +2 more |
2024-01-30 |
$30,721,000 |
| 11735630 |
Integrated circuit structures with source or drain dopant diffusion blocking layers |
Anand S. Murthy, Anupama Bowonder, Aaron A. Budrevich, Tahir Ghani |
2023-08-22 |
$16,803,000 |
| 11735670 |
Non-selective epitaxial source/drain deposition to reduce dopant diffusion for germanium NMOS transistors |
Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Tahir Ghani, Jack T. Kavalieros +3 more |
2023-08-22 |
$16,803,000 |
| 11699756 |
Source/drain diffusion barrier for germanium nMOS transistors |
Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Tahir Ghani, Jack T. Kavalieros +3 more |
2023-07-11 |
$21,736,000 |
| 11682731 |
Fin smoothing and integrated circuit structures resulting therefrom |
Anand S. Murthy, Tahir Ghani, Anupama Bowonder |
2023-06-20 |
$18,411,000 |
| 11621325 |
Source or drain structures with low resistivity |
Anand S. Murthy, Suresh Vishwanath |
2023-04-04 |
$21,090,000 |
| 11575005 |
Asymmetrical semiconductor nanowire field-effect transistor |
Seung Hoon Sung, Dipanjan Basu, Ashish Agrawal, Benjamin Chu-Kung, Siddharth Chouksey +3 more |
2023-02-07 |
$11,877,000 |
| 11532734 |
Gate-all-around integrated circuit structures having germanium nanowire channel structures |
Anand S. Murthy, Susmita Ghose, Zachary Geiger |
2022-12-20 |
$12,719,000 |
| 11532706 |
Gate-all-around integrated circuit structures having embedded GeSnB source or drain structures |
Anand S. Murthy, Susmita Ghose, Siddharth Chouksey |
2022-12-20 |
$12,719,000 |
| 11522048 |
Gate-all-around integrated circuit structures having source or drain structures with epitaxial nubs |
Anand S. Murthy, Mark Bohr, Tahir Ghani, Biswajeet Guha |
2022-12-06 |
$14,727,000 |
