Issued Patents All Time
Showing 25 most recent of 43 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12419091 | Source electrode and drain electrode protection for nanowire transistors | Biswajeet Guha, Anand S. Murthy, Tahir Ghani | 2025-09-16 |
| 11757037 | Epitaxial oxide plug for strained transistors | Biswajeet Guha, Anupama Bowonder, Anand S. Murthy, Tahir Ghani | 2023-09-12 |
| 11735670 | Non-selective epitaxial source/drain deposition to reduce dopant diffusion for germanium NMOS transistors | Glenn A. Glass, Anand S. Murthy, Cory Bomberger, Tahir Ghani, Jack T. Kavalieros +3 more | 2023-08-22 |
| 11699756 | Source/drain diffusion barrier for germanium nMOS transistors | Glenn A. Glass, Anand S. Murthy, Cory Bomberger, Tahir Ghani, Jack T. Kavalieros +3 more | 2023-07-11 |
| 11588017 | Nanowire for transistor integration | Glenn A. Glass, Chandra S. Mohapatra, Anand S. Murthy | 2023-02-21 |
| 11538905 | Nanowire transistors employing carbon-based layers | Glenn A. Glass, Anand S. Murthy, Nabil G. Mistkawi, Tahir Ghani | 2022-12-27 |
| 11482457 | Substrate defect blocking layers for strained channel semiconductor devices | Cory Bomberger, Anand S. Murthy | 2022-10-25 |
| 11444166 | Backside source/drain replacement for semiconductor devices with metallization on both sides | Glenn A. Glass, Anand S. Murthy, Chandra S. Mohapatra, Patrick Morrow, Mauro J. Kobrinsky | 2022-09-13 |
| 11430787 | Forming crystalline source/drain contacts on semiconductor devices | Scott Maddox, Cory Bomberger, Anand S. Murthy | 2022-08-30 |
| 11411096 | Source electrode and drain electrode protection for nanowire transistors | Biswajeet Guha, Anand S. Murthy, Tahir Ghani | 2022-08-09 |
| 11404575 | Diverse transistor channel materials enabled by thin, inverse-graded, germanium-based layer | Cory Bomberger, Glenn A. Glass, Anand S. Murthy, Ju H. Nam, Tahir Ghani | 2022-08-02 |
| 11335600 | Integration method for finfet with tightly controlled multiple fin heights | Seiyon Kim, Jack T. Kavalieros, Anand S. Murthy, Glenn A. Glass | 2022-05-17 |
| 11264501 | Device, method and system for promoting channel stress in a NMOS transistor | Rishabh Mehandru, Anand S. Murthy, Cory Bomberger | 2022-03-01 |
| 11251302 | Epitaxial oxide plug for strained transistors | Biswajeet Guha, Anupama Bowonder, Anand S. Murthy, Tahir Ghani | 2022-02-15 |
| 11222977 | Source/drain diffusion barrier for germanium NMOS transistors | Glenn A. Glass, Anand S. Murthy, Cory Bomberger, Tahir Ghani, Jack T. Kavalieros +3 more | 2022-01-11 |
| 11189730 | Non-selective epitaxial source/drain deposition to reduce dopant diffusion for germanium nMOS transistors | Glenn A. Glass, Anand S. Murthy, Cory Bomberger, Tahir Ghani, Jack T. Kavalieros +3 more | 2021-11-30 |
| 11121030 | Transistors employing carbon-based etch stop layer for preserving source/drain material during contact trench etch | Glenn A. Glass, Anand S. Murthy, Benjamin Chu-Kung, Seung Hoon Sung, Jack T. Kavalieros +1 more | 2021-09-14 |
| 11101356 | Doped insulator cap to reduce source/drain diffusion for germanium NMOS transistors | Glenn A. Glass, Anand S. Murthy, Cory Bomberger, Tahir Ghani, Jack T. Kavalieros +3 more | 2021-08-24 |
| 11101350 | Integrated circuit with germanium-rich channel transistors including one or more dopant diffusion barrier elements | Glenn A. Glass, Anand S. Murthy, Benjamin Chu-Kung, Seung Hoon Sung, Jack T. Kavalieros +2 more | 2021-08-24 |
| 11101268 | Transistors employing non-selective deposition of source/drain material | Scott Maddox, Ritesh Jhaveri, Pratik A. Patel, Szuya S. Liao, Anand S. Murthy +1 more | 2021-08-24 |
| 11081570 | Transistors with lattice matched gate structure | Glenn A. Glass, Anand S. Murthy, Jack T. Kavalieros, Seung Hoon Sung, Benjamin Chu-Kung +1 more | 2021-08-03 |
| 11069795 | Transistors with channel and sub-channel regions with distinct compositions and dimensions | Glenn A. Glass, Anand S. Murthy, Jun Sung Kang, Bruce Beattie, Anupama Bowonder +3 more | 2021-07-20 |
| 11056592 | Silicon substrate modification to enable formation of thin, relaxed, germanium-based layer | Cory Bomberger, Glenn A. Glass, Anand S. Murthy, Ju H. Nam, Tahir Ghani | 2021-07-06 |
| 11024737 | Etching fin core to provide fin doubling | Chandra S. Mohapatra, Glenn A. Glass, Anand S. Murthy | 2021-06-01 |
| 11011620 | Techniques for increasing channel region tensile strain in n-MOS devices | Rishabh Mehandru, Cory E. Weber, Anand S. Murthy, Glenn A. Glass, Jiong Zhang +2 more | 2021-05-18 |