RJ

Ritesh Jhaveri

IN Intel: 14 patents #2,910 of 30,777Top 10%
Overall (All Time): #336,976 of 4,157,543Top 9%
14
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
12131912 Advanced etching technologies for straight, tall and uniform fins across multiple fin pitch structures Muralidhar S. Ambati, Moosung Kim 2024-10-29
12094881 Arsenic-doped epitaxial source/drain regions for NMOS Anand S. Murthy, Ryan Keech, Nicholas G. Minutillo 2024-09-17
11875999 Advanced etching technologies for straight, tall and uniform fins across multiple fin pitch structures Muralidhar S. Ambati, Moosung Kim 2024-01-16
11610889 Arsenic-doped epitaxial, source/drain regions for NMOS Anand S. Murthy, Ryan Keech, Nicholas G. Minutillo 2023-03-21
11417531 Advanced etching technologies for straight, tall and uniform fins across multiple fin pitch structures Muralidhar S. Ambati, Moosung Kim 2022-08-16
11101268 Transistors employing non-selective deposition of source/drain material Karthik Jambunathan, Scott Maddox, Pratik A. Patel, Szuya S. Liao, Anand S. Murthy +1 more 2021-08-24
11011620 Techniques for increasing channel region tensile strain in n-MOS devices Rishabh Mehandru, Cory E. Weber, Anand S. Murthy, Karthik Jambunathan, Glenn A. Glass +2 more 2021-05-18
10950453 Advanced etching technologies for straight, tall and uniform fins across multiple fin pitch structures Muralidhar S. Ambati, Moosung Kim 2021-03-16
10643855 Advanced etching technologies for straight, tall and uniform fins across multiple fin pitch structures Muralidhar S. Ambati, Moosung Kim 2020-05-05
10204794 Advanced etching technologies for straight, tall and uniform fins across multiple fin pitch structures Muralidhar S. Ambati, Moosung Kim 2019-02-12
10147634 Techniques for trench isolation using flowable dielectric materials Jeanne Luce, Sang-Won Park, Dennis G. Hanken 2018-12-04
9923054 Fin structure having hard mask etch stop layers underneath gate sidewall spacers Bernard Sell, Tahir Ghani 2018-03-20
9406547 Techniques for trench isolation using flowable dielectric materials Jeanne Luce, Sang-Won Park, Dennis G. Hanken 2016-08-02
9048260 Method of forming a semiconductor device with tall fins and using hard mask etch stops Bernard Sell, Tahir Ghani 2015-06-02