| 12507449 |
Gate-all-around integrated circuit structures having necked feature |
Cornelia Weber, Varun MISHRA, Tahir Ghani, Pratik Patel, Woocheol CHUNG +1 more |
2025-12-23 |
|
| 12501661 |
Integrated circuit structures having differentiated channel sizing |
Cornelia Weber, Clifford L. Ong, Sukru YEMENICIOGLU, Tahir Ghani, Brian J. Greene |
2025-12-16 |
|
| 12471362 |
Integrated circuit structures having ultra-high conductivity global routing |
Abhishek Sharma, Tahir Ghani, Anand S. Murthy, Sagar Suthram, Pushkar Ranade +2 more |
2025-11-11 |
|
| 12426299 |
Fin shaping and integrated circuit structures resulting therefrom |
Szuya S. Liao, Rahul Pandey, Anupama Bowonder, Pratik A. Patel |
2025-09-23 |
|
| 12349420 |
Device, method and system to provide a stressed channel of a transistor |
Stephen M. Cea, Tahir Ghani, Anand S. Murthy |
2025-07-01 |
|
| 12336278 |
Gate-all-around integrated circuit structures having high mobility |
Roza Kotlyar, Stephen M. Cea, Biswajeet Guha, Dax M. Crum, Tahir Ghani |
2025-06-17 |
|
| 12317590 |
Substrate-free integrated circuit structures |
Biswajeet Guha, Brian J. Greene, Avyaya Jayanthinarasimham, Ayan Kar, Benjamin Orr +9 more |
2025-05-27 |
|
| 12310044 |
Vertical integration scheme and circuit elements architecture for area scaling of semiconductor devices |
Patrick Morrow, Ranjith Kumar, Cory E. Weber, Seiyon Kim, Stephen M. Cea +1 more |
2025-05-20 |
|
| 12288813 |
Gate-all-around integrated circuit structures having insulator fin on insulator substrate |
Aaron D. Lilak, Cory E. Weber, Willy Rachmady, Varun MISHRA |
2025-04-29 |
|
| 12288810 |
Backside contact structures and fabrication for metal on both sides of devices |
Patrick Morrow, Aaron D. Lilak, Kimin Jun |
2025-04-29 |
|
| 12288807 |
Amorphization and regrowth of source-drain regions from the bottom-side of a semiconductor assembly |
Aaron D. Lilak, Willy Rachmady, Harold W. Kennel, Tahir Ghani |
2025-04-29 |
|
| 12255137 |
Sideways vias in isolation areas to contact interior layers in stacked devices |
Ehren Mannebach, Aaron D. Lilak, Hui Jae Yoo, Patrick Morrow, Anh Phan +3 more |
2025-03-18 |
|
| 12224326 |
Contact architecture for capacitance reduction and satisfactory contact resistance |
Pratik A. Patel, Ralph T. Troeger, Szuya S. Liao |
2025-02-11 |
|
| 12199098 |
Fin doping and integrated circuit structures resulting therefrom |
Aaron D. Lilak, Cory E. Weber, Stephen M. Cea, Leonard C. Pipes, Seahee Hwangbo +3 more |
2025-01-14 |
|
| 12176429 |
Wrap-around contact structures for semiconductor nanowires and nanoribbons |
Tahir Ghani, Stephen M. Cea, Biswajeet Guha |
2024-12-24 |
$17,261,000 |
| 12107085 |
Interconnect techniques for electrically connecting source/drain regions of stacked transistors |
Aaron D. Lilak, Gilbert Dewey, Cheng-Ying Huang, Christopher J. Jezewski, Ehren Mannebach +4 more |
2024-10-01 |
$20,560,000 |
| 12100705 |
Deep trench via for three-dimensional integrated circuit |
Yih Wang, Mauro J. Kobrinsky, Tahir Ghani, Mark Bohr, Marni Nabors |
2024-09-24 |
$33,787,000 |
| 12100623 |
Vertically stacked finFETs and shared gate patterning |
Aaron D. Lilak, Sean T. Ma, Justin R. Weber, Stephen M. Cea, Patrick Morrow +1 more |
2024-09-24 |
$33,787,000 |
| 12057494 |
Stacked transistors |
Patrick Morrow, Aaron D. Lilak |
2024-08-06 |
$17,070,000 |
| 12033896 |
Isolation wall stressor structures to improve channel stress and their methods of fabrication |
Aaron D. Lilak, Christopher J. Jezewski, Willy Rachmady, Gilbert Dewey, Anh Phan |
2024-07-09 |
$24,938,000 |
| 11996362 |
Integrated circuit device with crenellated metal trace layout |
Patrick Morrow, Mauro J. Kobrinsky, Mark Bohr, Tahir Ghani, Ranjith Kumar |
2024-05-28 |
$30,739,000 |
| 11984506 |
Field effect transistor having a gate dielectric with a dipole layer and having a gate stressor layer |
Vishal Tiwari, Dan S. LAVRIC, Michal Mleczko, Szuya S. Liao |
2024-05-14 |
$33,809,000 |
| 11942526 |
Integrated circuit contact structures |
Patrick Morrow, Glenn A. Glass, Anand S. Murthy |
2024-03-26 |
$33,708,000 |
| 11942416 |
Sideways vias in isolation areas to contact interior layers in stacked devices |
Ehren Mannebach, Aaron D. Lilak, Hui Jae Yoo, Patrick Morrow, Anh Phan +3 more |
2024-03-26 |
$33,708,000 |
| 11935933 |
Backside contact structures and fabrication for metal on both sides of devices |
Patrick Morrow, Aaron D. Lilak, Kimin Jun |
2024-03-19 |
$28,784,000 |
