| 12389629 |
Source/drain regions in integrated circuit structures |
Sean T. Ma |
2025-08-12 |
|
| 12310044 |
Vertical integration scheme and circuit elements architecture for area scaling of semiconductor devices |
Rishabh Mehandru, Patrick Morrow, Ranjith Kumar, Seiyon Kim, Stephen M. Cea +1 more |
2025-05-20 |
|
| 12288813 |
Gate-all-around integrated circuit structures having insulator fin on insulator substrate |
Aaron D. Lilak, Rishabh Mehandru, Willy Rachmady, Varun MISHRA |
2025-04-29 |
|
| 12243875 |
Forksheet transistors with dielectric or conductive spine |
Seung Hoon Sung, Cheng-Ying Huang, Marko Radosavljevic, Christopher M. Neumann, Susmita Ghose +4 more |
2025-03-04 |
|
| 12199098 |
Fin doping and integrated circuit structures resulting therefrom |
Aaron D. Lilak, Stephen M. Cea, Leonard C. Pipes, Seahee Hwangbo, Rishabh Mehandru +3 more |
2025-01-14 |
|
| 12191349 |
Reducing off-state leakage in semiconductor devices |
Dipanjan Basu, Justin R. Weber, Sean T. Ma, Harold W. Kennel, Seung Hoon Sung +3 more |
2025-01-07 |
|
| 12068206 |
Extension of nanocomb transistor arrangements to implement gate all around |
Varun MISHRA, Stephen M. Cea, Jack T. Kavalieros, Tahir Ghani |
2024-08-20 |
$20,163,000 |
| 11990476 |
Semiconductor nanowire device having (111)-plane channel sidewalls |
Harold W. Kennel, Willy Rachmady, Gilbert Dewey |
2024-05-21 |
$18,840,000 |
| 11923370 |
Forksheet transistors with dielectric or conductive spine |
Seung Hoon Sung, Cheng-Ying Huang, Marko Radosavljevic, Christopher M. Neumann, Susmita Ghose +4 more |
2024-03-05 |
$29,696,000 |
| 11881517 |
Channel structures for thin-film transistors |
Abhishek A. Sharma, Van H. Le, Sean T. Ma |
2024-01-23 |
$52,361,000 |
| 11862702 |
Gate-all-around integrated circuit structures having insulator FIN on insulator substrate |
Aaron D. Lilak, Rishabh Mehandru, Willy Rachmady, Varun MISHRA |
2024-01-02 |
$30,016,000 |
| 11757026 |
Nanowire structures having wrap-around contacts |
Stephen M. Cea, Patrick H. Keys, Seiyon Kim, Michael Haverty, Sadasivan Shankar |
2023-09-12 |
$80,406,000 |
| 11522072 |
Vertical integration scheme and circuit elements architecture for area scaling of semiconductor devices |
Rishabh Mehandru, Patrick Morrow, Ranjith Kumar, Seiyon Kim, Stephen M. Cea +1 more |
2022-12-06 |
$14,727,000 |
| 11515420 |
Contacts to n-type transistors with X-valley layer over L-valley channels |
Dax M. Crum, Rishabh Mehandru, Harold W. Kennel, Benjamin Chu-Kung |
2022-11-29 |
$14,086,000 |
| 11398478 |
Semiconductor nanowire device having (111)-plane channel sidewalls |
Harold W. Kennel, Willy Rachmady, Gilbert Dewey |
2022-07-26 |
$27,041,000 |
| 11342432 |
Gate-all-around integrated circuit structures having insulator fin on insulator substrate |
Aaron D. Lilak, Rishabh Mehandru, Willy Rachmady, Varun MISHRA |
2022-05-24 |
$18,289,000 |
| 11335789 |
Channel structures for thin-film transistors |
Abhishek A. Sharma, Van H. Le, Sean T. Ma |
2022-05-17 |
$14,251,000 |
| 11264453 |
Methods of doping fin structures of non-planar transistor devices |
Aaron D. Lilak, Szuya S. Liao, Aaron A. Budrevich |
2022-03-01 |
$16,941,000 |
| 11222947 |
Methods of doping fin structures of non-planar transistor devices |
Aaron D. Lilak, Szuya S. Liao, Aaron A. Budrevich |
2022-01-11 |
$33,310,000 |
| 11011620 |
Techniques for increasing channel region tensile strain in n-MOS devices |
Rishabh Mehandru, Anand S. Murthy, Karthik Jambunathan, Glenn A. Glass, Jiong Zhang +2 more |
2021-05-18 |
$44,170,000 |
| 10991696 |
Vertically stacked devices with self-aligned regions formed by direct self assembly (DSA) processing |
Aaron D. Lilak, Patrick Theofanis, Stephen M. Cea, Rishabh Mehandru |
2021-04-27 |
$44,593,000 |
| 10910405 |
Backside fin recess control with multi-HSI option |
Aaron D. Lilak, Patrick Morrow, Stephen M. Cea, Rishabh Mehandru |
2021-02-02 |
$28,243,000 |
| 10847635 |
Vertical integration scheme and circuit elements architecture for area scaling of semiconductor devices |
Rishabh Mehandru, Patrick Morrow, Ranjith Kumar, Seiyon Kim, Stephen M. Cea +1 more |
2020-11-24 |
$25,522,000 |
| 10847653 |
Semiconductor device having metallic source and drain regions |
Martin D. Giles, Annalisa Cappellani, Sanaz K. Gardner, Rafael Rios, Aaron A. Budrevich |
2020-11-24 |
$25,522,000 |
| 10840366 |
Nanowire structures having wrap-around contacts |
Stephen M. Cea, Patrick H. Keys, Seiyon Kim, Michael Haverty, Sadasivan Shankar |
2020-11-17 |
$36,756,000 |
