Issued Patents All Time
Showing 1–22 of 22 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12230687 | Lateral gate material arrangements for quantum dot devices | Roza Kotlyar, Stephanie A. Bojarski, Hubert C. George, Payam Amin, Ravi Pillarisetty +3 more | 2025-02-18 |
| 12199098 | Fin doping and integrated circuit structures resulting therefrom | Aaron D. Lilak, Cory E. Weber, Stephen M. Cea, Leonard C. Pipes, Seahee Hwangbo +3 more | 2025-01-14 |
| 12100623 | Vertically stacked finFETs and shared gate patterning | Aaron D. Lilak, Sean T. Ma, Justin R. Weber, Rishabh Mehandru, Stephen M. Cea +1 more | 2024-09-24 |
| 11757026 | Nanowire structures having wrap-around contacts | Stephen M. Cea, Cory E. Weber, Seiyon Kim, Michael Haverty, Sadasivan Shankar | 2023-09-12 |
| 11527613 | Removal of a bottom-most nanowire from a nanowire device stack | Aaron D. Lilak, Sean T. Ma, Stephen M. Cea, Rishabh Mehandru | 2022-12-13 |
| 11495683 | Multiple strain states in epitaxial transistor channel through the incorporation of stress-relief defects within an underlying seed material | Aaron D. Lilak, Sayed Hasan, Stephen M. Cea, Anupama Bowonder | 2022-11-08 |
| 11469299 | Gate-all-around integrated circuit structures having underlying dopant-diffusion blocking layers | Glenn A. Glass, Anand S. Murthy, Biswajeet Guha, Dax M. Crum, Tahir Ghani +2 more | 2022-10-11 |
| 11404319 | Vertically stacked finFETs and shared gate patterning | Aaron D. Lilak, Sean T. Ma, Justin R. Weber, Rishabh Mehandru, Stephen M. Cea +1 more | 2022-08-02 |
| 11183564 | Quantum dot devices with strain control | Nicole K. Thomas, Ravi Pillarisetty, Payam Amin, Roza Kotlyar, Hubert C. George +7 more | 2021-11-23 |
| 11107891 | Hexagonal arrays for quantum dot devices | Ravi Pillarisetty, Hubert C. George, Nicole K. Thomas, Jeanette M. Roberts, Roman Caudillo +4 more | 2021-08-31 |
| 10978590 | Methods and apparatus to remove epitaxial defects in semiconductors | Aaron D. Lilak, Rishabh Mehandru, Patrick Morrow | 2021-04-13 |
| 10896907 | Retrograde transistor doping by heterojunction materials | Hei Kam, Rishabh Mehandru, Aaron A. Budrevich | 2021-01-19 |
| 10892326 | Removal of a bottom-most nanowire from a nanowire device stack | Aaron D. Lilak, Sean T. Ma, Stephen M. Cea, Rishabh Mehandru | 2021-01-12 |
| 10840366 | Nanowire structures having wrap-around contacts | Stephen M. Cea, Cory E. Weber, Seiyon Kim, Michael Haverty, Sadasivan Shankar | 2020-11-17 |
| 10790281 | Stacked channel structures for MOSFETs | Rishabh Mehandru, Roza Kotlyar, Stephen M. Cea | 2020-09-29 |
| 10665770 | Fin strain in quantum dot devices | Ravi Pillarisetty, Kanwaljit Singh, Roman Caudillo, Hubert C. George, Zachary R. Yoscovits +5 more | 2020-05-26 |
| 10636907 | Deep EPI enabled by backside reveal for stress enhancement and contact | Aaron D. Lilak, Stephen M. Cea, Rishabh Mehandru, Patrick Morrow | 2020-04-28 |
| 10483385 | Nanowire structures having wrap-around contacts | Stephen M. Cea, Cory E. Weber, Seiyon Kim, Michael Haverty, Sadasivan Shankar | 2019-11-19 |
| 10026829 | Semiconductor device with isolated body portion | Annalisa Cappellani, Stephen M. Cea, Tahir Ghani, Harry Gomez, Jack T. Kavalieros +5 more | 2018-07-17 |
| 9608059 | Semiconductor device with isolated body portion | Annalisa Cappellani, Stephen M. Cea, Tahir Ghani, Harry Gomez, Jack T. Kavalieros +5 more | 2017-03-28 |
| 7790587 | Method to reduce junction leakage through partial regrowth with ultrafast anneal and structures formed thereby | Jack Hwang, Sridhar Govindaraju, Seok Hee Lee, Chad D. Lindfors | 2010-09-07 |
| 6936505 | Method of forming a shallow junction | Stephen M. Cea | 2005-08-30 |