| 12484266 |
Gate-all-around integrated circuit structures having underlying dopant-diffusion blocking layers |
Glenn A. Glass, Anand S. Murthy, Biswajeet Guha, Dax M. Crum, Tahir Ghani +2 more |
2025-11-25 |
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| 12230687 |
Lateral gate material arrangements for quantum dot devices |
Roza Kotlyar, Stephanie A. Bojarski, Hubert C. George, Payam Amin, Ravi Pillarisetty +3 more |
2025-02-18 |
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| 12199098 |
Fin doping and integrated circuit structures resulting therefrom |
Aaron D. Lilak, Cory E. Weber, Stephen M. Cea, Leonard C. Pipes, Seahee Hwangbo +3 more |
2025-01-14 |
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| 12100623 |
Vertically stacked finFETs and shared gate patterning |
Aaron D. Lilak, Sean T. Ma, Justin R. Weber, Rishabh Mehandru, Stephen M. Cea +1 more |
2024-09-24 |
$33,787,000 |
| 11757026 |
Nanowire structures having wrap-around contacts |
Stephen M. Cea, Cory E. Weber, Seiyon Kim, Michael Haverty, Sadasivan Shankar |
2023-09-12 |
$80,406,000 |
| 11527613 |
Removal of a bottom-most nanowire from a nanowire device stack |
Aaron D. Lilak, Sean T. Ma, Stephen M. Cea, Rishabh Mehandru |
2022-12-13 |
$11,573,000 |
| 11495683 |
Multiple strain states in epitaxial transistor channel through the incorporation of stress-relief defects within an underlying seed material |
Aaron D. Lilak, Sayed Hasan, Stephen M. Cea, Anupama Bowonder |
2022-11-08 |
$15,080,000 |
| 11469299 |
Gate-all-around integrated circuit structures having underlying dopant-diffusion blocking layers |
Glenn A. Glass, Anand S. Murthy, Biswajeet Guha, Dax M. Crum, Tahir Ghani +2 more |
2022-10-11 |
$16,542,000 |
| 11404319 |
Vertically stacked finFETs and shared gate patterning |
Aaron D. Lilak, Sean T. Ma, Justin R. Weber, Rishabh Mehandru, Stephen M. Cea +1 more |
2022-08-02 |
$13,520,000 |
| 11183564 |
Quantum dot devices with strain control |
Nicole K. Thomas, Ravi Pillarisetty, Payam Amin, Roza Kotlyar, Hubert C. George +7 more |
2021-11-23 |
$33,627,000 |
| 11107891 |
Hexagonal arrays for quantum dot devices |
Ravi Pillarisetty, Hubert C. George, Nicole K. Thomas, Jeanette M. Roberts, Roman Caudillo +4 more |
2021-08-31 |
$22,590,000 |
| 10978590 |
Methods and apparatus to remove epitaxial defects in semiconductors |
Aaron D. Lilak, Rishabh Mehandru, Patrick Morrow |
2021-04-13 |
$58,007,000 |
| 10896907 |
Retrograde transistor doping by heterojunction materials |
Hei Kam, Rishabh Mehandru, Aaron A. Budrevich |
2021-01-19 |
$115,732,000 |
| 10892326 |
Removal of a bottom-most nanowire from a nanowire device stack |
Aaron D. Lilak, Sean T. Ma, Stephen M. Cea, Rishabh Mehandru |
2021-01-12 |
$55,416,000 |
| 10840366 |
Nanowire structures having wrap-around contacts |
Stephen M. Cea, Cory E. Weber, Seiyon Kim, Michael Haverty, Sadasivan Shankar |
2020-11-17 |
$36,756,000 |
| 10790281 |
Stacked channel structures for MOSFETs |
Rishabh Mehandru, Roza Kotlyar, Stephen M. Cea |
2020-09-29 |
$31,444,000 |
| 10665770 |
Fin strain in quantum dot devices |
Ravi Pillarisetty, Kanwaljit Singh, Roman Caudillo, Hubert C. George, Zachary R. Yoscovits +5 more |
2020-05-26 |
$31,191,000 |
| 10636907 |
Deep EPI enabled by backside reveal for stress enhancement and contact |
Aaron D. Lilak, Stephen M. Cea, Rishabh Mehandru, Patrick Morrow |
2020-04-28 |
$36,717,000 |
| 10483385 |
Nanowire structures having wrap-around contacts |
Stephen M. Cea, Cory E. Weber, Seiyon Kim, Michael Haverty, Sadasivan Shankar |
2019-11-19 |
$26,843,000 |
| 10026829 |
Semiconductor device with isolated body portion |
Annalisa Cappellani, Stephen M. Cea, Tahir Ghani, Harry Gomez, Jack T. Kavalieros +5 more |
2018-07-17 |
$22,904,000 |
| 9608059 |
Semiconductor device with isolated body portion |
Annalisa Cappellani, Stephen M. Cea, Tahir Ghani, Harry Gomez, Jack T. Kavalieros +5 more |
2017-03-28 |
$8,391,000 |
| 7790587 |
Method to reduce junction leakage through partial regrowth with ultrafast anneal and structures formed thereby |
Jack Hwang, Sridhar Govindaraju, Seok Hee Lee, Chad D. Lindfors |
2010-09-07 |
$9,640,000 |
| 6936505 |
Method of forming a shallow junction |
Stephen M. Cea |
2005-08-30 |
$19,986,000 |
