| 12349420 |
Device, method and system to provide a stressed channel of a transistor |
Rishabh Mehandru, Tahir Ghani, Anand S. Murthy |
2025-07-01 |
|
| 12336278 |
Gate-all-around integrated circuit structures having high mobility |
Roza Kotlyar, Rishabh Mehandru, Biswajeet Guha, Dax M. Crum, Tahir Ghani |
2025-06-17 |
|
| 12310044 |
Vertical integration scheme and circuit elements architecture for area scaling of semiconductor devices |
Rishabh Mehandru, Patrick Morrow, Ranjith Kumar, Cory E. Weber, Seiyon Kim +1 more |
2025-05-20 |
|
| 12294006 |
Gate-all-around integrated circuit structures having insulator substrate |
Chung-Hsun Lin, Biswajeet Guha, William Hsu, Tahir Ghani |
2025-05-06 |
|
| 12243875 |
Forksheet transistors with dielectric or conductive spine |
Seung Hoon Sung, Cheng-Ying Huang, Marko Radosavljevic, Christopher M. Neumann, Susmita Ghose +4 more |
2025-03-04 |
|
| 12199098 |
Fin doping and integrated circuit structures resulting therefrom |
Aaron D. Lilak, Cory E. Weber, Leonard C. Pipes, Seahee Hwangbo, Rishabh Mehandru +3 more |
2025-01-14 |
|
| 12199142 |
Neighboring gate-all-around integrated circuit structures having conductive contact stressor between epitaxial source or drain regions |
Siddharth Chouksey, Jack T. Kavalieros, Ashish Agrawal, Willy Rachmady |
2025-01-14 |
|
| 12176429 |
Wrap-around contact structures for semiconductor nanowires and nanoribbons |
Rishabh Mehandru, Tahir Ghani, Biswajeet Guha |
2024-12-24 |
$17,261,000 |
| 12142634 |
Silicon and silicon germanium nanowire structures |
Kelin J. Kuhn, Seiyon Kim, Rafael Rios, Martin D. Giles, Annalisa Cappellani +3 more |
2024-11-12 |
$636,000 |
| 12125916 |
Nanowire structures having non-discrete source and drain regions |
Annalisa Cappellani, Martin D. Giles, Rafael Rios, Seiyon Kim, Kelin J. Kuhn |
2024-10-22 |
$118,222,000 |
| 12100623 |
Vertically stacked finFETs and shared gate patterning |
Aaron D. Lilak, Sean T. Ma, Justin R. Weber, Rishabh Mehandru, Patrick Morrow +1 more |
2024-09-24 |
$33,787,000 |
| 12068206 |
Extension of nanocomb transistor arrangements to implement gate all around |
Varun MISHRA, Cory E. Weber, Jack T. Kavalieros, Tahir Ghani |
2024-08-20 |
$20,163,000 |
| 12057491 |
Self-aligned gate endcap (SAGE) architectures with gate-all-around devices above insulator substrates |
Biswajeet Guha, Dax M. Crum, Leonard P. GULER, Tahir Ghani |
2024-08-06 |
$17,070,000 |
| 11984449 |
Channel structures with sub-fin dopant diffusion blocking layers |
Cory Bomberger, Anand S. Murthy, Biswajeet Guha, Anupama Bowonder, Tahir Ghani |
2024-05-14 |
$33,809,000 |
| 11923412 |
Sub-fin leakage reduction for template strained materials |
Rishabh Mehandru, Anupama Bowonder, Juhyung Nam, Willy Rachmady |
2024-03-05 |
$29,696,000 |
| 11923370 |
Forksheet transistors with dielectric or conductive spine |
Seung Hoon Sung, Cheng-Ying Huang, Marko Radosavljevic, Christopher M. Neumann, Susmita Ghose +4 more |
2024-03-05 |
$29,696,000 |
| 11843052 |
Transistor contact area enhancement |
Rishabh Mehandru, Tahir Ghani |
2023-12-12 |
$45,136,000 |
| 11824107 |
Wrap-around contact structures for semiconductor nanowires and nanoribbons |
Rishabh Mehandru, Tahir Ghani, Biswajeet Guha |
2023-11-21 |
$28,968,000 |
| 11757026 |
Nanowire structures having wrap-around contacts |
Cory E. Weber, Patrick H. Keys, Seiyon Kim, Michael Haverty, Sadasivan Shankar |
2023-09-12 |
$80,406,000 |
| 11705518 |
Isolation schemes for gate-all-around transistor devices |
Rishabh Mehandru, Biswajeet Guha, Tahir Ghani, William Hsu |
2023-07-18 |
$21,060,000 |
| 11688780 |
Deep source and drain for transistor structures with back-side contact metallization |
Rishabh Mehandru, Tahir Ghani |
2023-06-27 |
$18,721,000 |
| 11676965 |
Strained tunable nanowire structures and process |
Tahir Ghani, Anand S. Murthy, Biswajeet Guha |
2023-06-13 |
$22,204,000 |
| 11658183 |
Metallization structures under a semiconductor device layer |
Aaron D. Lilak, Rishabh Mehandru, Patrick Morrow |
2023-05-23 |
$11,397,000 |
| 11600696 |
Sub-fin leakage reduction for template strained materials |
Rishabh Mehandru, Anupama Bowonder, Juhyung Nam, Willy Rachmady |
2023-03-07 |
$16,825,000 |
| 11581406 |
Method of fabricating CMOS FinFETs by selectively etching a strained SiGe layer |
Roza Kotlyar, Harold W. Kennel, Anand S. Murthy, Glenn A. Glass, Kelin J. Kuhn +1 more |
2023-02-14 |
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