Issued Patents All Time
Showing 51–75 of 126 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10991799 | Silicon and silicon germanium nanowire structures | Kelin J. Kuhn, Seiyon Kim, Rafael Rios, Martin D. Giles, Annalisa Cappellani +3 more | 2021-04-27 |
| 10991696 | Vertically stacked devices with self-aligned regions formed by direct self assembly (DSA) processing | Aaron D. Lilak, Patrick Theofanis, Cory E. Weber, Rishabh Mehandru | 2021-04-27 |
| 10937665 | Methods and apparatus for gettering impurities in semiconductors | Aaron D. Lilak, Harold W. Kennel, Patrick Morrow, Rishabh Mehandru | 2021-03-02 |
| 10910405 | Backside fin recess control with multi-HSI option | Aaron D. Lilak, Patrick Morrow, Rishabh Mehandru, Cory E. Weber | 2021-02-02 |
| 10892326 | Removal of a bottom-most nanowire from a nanowire device stack | Aaron D. Lilak, Patrick H. Keys, Sean T. Ma, Rishabh Mehandru | 2021-01-12 |
| 10886272 | Techniques for forming dual-strain fins for co-integrated n-MOS and p-MOS devices | Rishabh Mehandru, Anupama Bowonder, Anand S. Murthy, Tahir Ghani | 2021-01-05 |
| 10854752 | High mobility strained channels for fin-based NMOS transistors | Roza Kotlyar, Harold W. Kennel, Glenn A. Glass, Anand S. Murthy, Willy Rachmady +1 more | 2020-12-01 |
| 10847635 | Vertical integration scheme and circuit elements architecture for area scaling of semiconductor devices | Rishabh Mehandru, Patrick Morrow, Ranjith Kumar, Cory E. Weber, Seiyon Kim +1 more | 2020-11-24 |
| 10840366 | Nanowire structures having wrap-around contacts | Cory E. Weber, Patrick H. Keys, Seiyon Kim, Michael Haverty, Sadasivan Shankar | 2020-11-17 |
| 10790281 | Stacked channel structures for MOSFETs | Rishabh Mehandru, Roza Kotlyar, Patrick H. Keys | 2020-09-29 |
| 10636907 | Deep EPI enabled by backside reveal for stress enhancement and contact | Aaron D. Lilak, Rishabh Mehandru, Patrick Morrow, Patrick H. Keys | 2020-04-28 |
| 10636871 | Silicon and silicon germanium nanowire structures | Kelin J. Kuhn, Seiyon Kim, Rafael Rios, Martin D. Giles, Annalisa Cappellani +3 more | 2020-04-28 |
| 10600810 | Backside fin recess control with multi-hsi option | Aaron D. Lilak, Patrick Morrow, Rishabh Mehandru, Cory E. Weber | 2020-03-24 |
| 10580899 | Nanowire structures having non-discrete source and drain regions | Annalisa Cappellani, Martin D. Giles, Rafael Rios, Seiyon Kim, Kelin J. Kuhn | 2020-03-03 |
| 10573715 | Backside isolation for integrated circuit | Aaron D. Lilak, Rishabh Mehandru, Harold W. Kennel, Paul B. Fischer | 2020-02-25 |
| 10529827 | Long channel MOS transistors for low leakage applications on a short channel CMOS chip | Rishabh Mehandru, Patrick Morrow, Paul B. Fischer, Aaron D. Lilak | 2020-01-07 |
| 10497781 | Methods for doping a sub-fin region of a semiconductor structure by backside reveal and associated devices | Aaron D. Lilak, Rishabh Mehandru, Cory E. Weber | 2019-12-03 |
| 10483385 | Nanowire structures having wrap-around contacts | Cory E. Weber, Patrick H. Keys, Seiyon Kim, Michael Haverty, Sadasivan Shankar | 2019-11-19 |
| 10468489 | Isolation structures for an integrated circuit element and method of making same | Aaron D. Lilak, Uygar E. Avci, David L. Kencke, Patrick Morrow, Kerryann Marrietta Foley +1 more | 2019-11-05 |
| 10453967 | Semiconductor nanowire device having cavity spacer and method of fabricating cavity spacer for semiconductor nanowire device | Rishabh Mehandru, Szuya S. Liao | 2019-10-22 |
| 10411090 | Hybrid trigate and nanowire CMOS device architecture | Cory E. Weber, Rishabh Mehandru | 2019-09-10 |
| 10403752 | Prevention of subchannel leakage current in a semiconductor device with a fin structure | Karthik Jambunathan, Glenn A. Glass, Chandra S. Mohapatra, Anand S. Murthy, Tahir Ghani | 2019-09-03 |
| 10304946 | Vertical integration scheme and circuit elements architecture for area scaling of semiconductor devices | Rishabh Mehandru, Patrick Morrow, Ranjith Kumar, Cory E. Weber, Seiyon Kim +1 more | 2019-05-28 |
| 10304929 | Two-dimensional condensation for uniaxially strained semiconductor fins | Jack T. Kavalieros, Nancy Zelick, Been-Yih Jin, Markus Kuhn | 2019-05-28 |
| 10153372 | High mobility strained channels for fin-based NMOS transistors | Roza Kotlyar, Harold W. Kennel, Glenn A. Glass, Anand S. Murthy, Willy Rachmady +1 more | 2018-12-11 |