Issued Patents All Time
Showing 1–21 of 21 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11631737 | Ingaas epi structure and wet etch process for enabling III-v GAA in art trench | Sanaz K. Gardner, Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Jack T. Kavalieros +4 more | 2023-04-18 |
| 11164974 | Channel layer formed in an art trench | Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Harold W. Kennel, Nicholas G. Minutillo +1 more | 2021-11-02 |
| 10756198 | Fermi-level unpinning structures for semiconductive devices, processes of forming same, and systems containing same | Gilbert Dewey, Niloy Mukherjee, Matthew V. Metz, Jack T. Kavalieros, Robert S. Chau | 2020-08-25 |
| 10304929 | Two-dimensional condensation for uniaxially strained semiconductor fins | Jack T. Kavalieros, Been-Yih Jin, Markus Kuhn, Stephen M. Cea | 2019-05-28 |
| 10249490 | Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and conformal epitaxy | Niti Goel, Robert S. Chau, Jack T. Kavalieros, Benjamin Chu-Kung, Matthew V. Metz +7 more | 2019-04-02 |
| 9865684 | Nanoscale structure with epitaxial film having a recessed bottom portion | Benjamin Chu-Kung, Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey +8 more | 2018-01-09 |
| 9768269 | Fermi-level unpinning structures for semiconductive devices, processes of forming same, and systems containing same | Gilbert Dewey, Niloy Mukherjee, Matthew V. Metz, Jack T. Kavalieros, Robert S. Chau | 2017-09-19 |
| 9711598 | Two-dimensional condensation for uniaxially strained semiconductor fins | Jack T. Kavalieros, Been-Yih Jin, Markus Kuhn, Stephen M. Cea | 2017-07-18 |
| 9680013 | Non-planar device having uniaxially strained semiconductor body and method of making same | Stephen M. Cea, Roza Kotlyar, Jack T. Kavalieros, Martin D. Giles, Tahir Ghani +2 more | 2017-06-13 |
| 9640537 | Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and conformal epitaxy | Niti Goel, Robert S. Chau, Jack T. Kavalieros, Benjamin Chu-Kung, Matthew V. Metz +7 more | 2017-05-02 |
| 9419140 | Two-dimensional condensation for uniaxially strained semiconductor fins | Jack T. Kavalieros, Been-Yih Jin, Markus Kuhn, Stephen M. Cea | 2016-08-16 |
| 9391181 | Lattice mismatched hetero-epitaxial film | Benjamin Chu-Kung, Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey +8 more | 2016-07-12 |
| 9159835 | Two-dimensional condensation for uniaxially strained semiconductor fins | Jack T. Kavalieros, Been-Yih Jin, Markus Kuhn, Stephen M. Cea | 2015-10-13 |
| 9029835 | Epitaxial film on nanoscale structure | Benjamin Chu-King, Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey +8 more | 2015-05-12 |
| 8878363 | Fermi-level unpinning structures for semiconductive devices, processes of forming same, and systems containing same | Gilbert Dewey, Niloy Mukherjee, Matthew V. Metz, Jack T. Kavalieros, Robert S. Chau | 2014-11-04 |
| 8872225 | Defect transferred and lattice mismatched epitaxial film | Benjamin Chu-Kung, Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey +8 more | 2014-10-28 |
| 8558279 | Non-planar device having uniaxially strained semiconductor body and method of making same | Stephen M. Cea, Roza Kotlyar, Jack T. Kavalieros, Martin D. Giles, Tahir Ghani +2 more | 2013-10-15 |
| 8334184 | Polish to remove topography in sacrificial gate layer prior to gate patterning | Joseph M. Steigerwald, Uday Shah, Seiichi Morimoto | 2012-12-18 |
| 8211772 | Two-dimensional condensation for uniaxially strained semiconductor fins | Jack T. Kavalieros, Been-Yih Jin, Markus Kuhn, Stephen M. Cea | 2012-07-03 |
| 7960794 | Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow | Brian S. Doyle, Suman Datta, Been-Yih Jin, Robert S. Chau | 2011-06-14 |
| 7348284 | Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow | Brian S. Doyle, Suman Datta, Been-Yih Jin, Robert S. Chau | 2008-03-25 |