| 11631737 |
Ingaas epi structure and wet etch process for enabling III-v GAA in art trench |
Sanaz K. Gardner, Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Jack T. Kavalieros +4 more |
2023-04-18 |
$32,873,000 |
| 11164974 |
Channel layer formed in an art trench |
Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Harold W. Kennel, Nicholas G. Minutillo +1 more |
2021-11-02 |
$26,002,000 |
| 10756198 |
Fermi-level unpinning structures for semiconductive devices, processes of forming same, and systems containing same |
Gilbert Dewey, Niloy Mukherjee, Matthew V. Metz, Jack T. Kavalieros, Robert S. Chau |
2020-08-25 |
$27,661,000 |
| 10304929 |
Two-dimensional condensation for uniaxially strained semiconductor fins |
Jack T. Kavalieros, Been-Yih Jin, Markus Kuhn, Stephen M. Cea |
2019-05-28 |
$17,387,000 |
| 10249490 |
Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and conformal epitaxy |
Niti Goel, Robert S. Chau, Jack T. Kavalieros, Benjamin Chu-Kung, Matthew V. Metz +7 more |
2019-04-02 |
$26,887,000 |
| 9865684 |
Nanoscale structure with epitaxial film having a recessed bottom portion |
Benjamin Chu-Kung, Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey +8 more |
2018-01-09 |
$14,051,000 |
| 9768269 |
Fermi-level unpinning structures for semiconductive devices, processes of forming same, and systems containing same |
Gilbert Dewey, Niloy Mukherjee, Matthew V. Metz, Jack T. Kavalieros, Robert S. Chau |
2017-09-19 |
$8,005,000 |
| 9711598 |
Two-dimensional condensation for uniaxially strained semiconductor fins |
Jack T. Kavalieros, Been-Yih Jin, Markus Kuhn, Stephen M. Cea |
2017-07-18 |
$6,909,000 |
| 9680013 |
Non-planar device having uniaxially strained semiconductor body and method of making same |
Stephen M. Cea, Roza Kotlyar, Jack T. Kavalieros, Martin D. Giles, Tahir Ghani +2 more |
2017-06-13 |
$8,497,000 |
| 9640537 |
Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and conformal epitaxy |
Niti Goel, Robert S. Chau, Jack T. Kavalieros, Benjamin Chu-Kung, Matthew V. Metz +7 more |
2017-05-02 |
$12,076,000 |
| 9419140 |
Two-dimensional condensation for uniaxially strained semiconductor fins |
Jack T. Kavalieros, Been-Yih Jin, Markus Kuhn, Stephen M. Cea |
2016-08-16 |
$10,311,000 |
| 9391181 |
Lattice mismatched hetero-epitaxial film |
Benjamin Chu-Kung, Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey +8 more |
2016-07-12 |
$10,128,000 |
| 9159835 |
Two-dimensional condensation for uniaxially strained semiconductor fins |
Jack T. Kavalieros, Been-Yih Jin, Markus Kuhn, Stephen M. Cea |
2015-10-13 |
$14,687,000 |
| 9029835 |
Epitaxial film on nanoscale structure |
Benjamin Chu-King, Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey +8 more |
2015-05-12 |
$21,151,000 |
| 8878363 |
Fermi-level unpinning structures for semiconductive devices, processes of forming same, and systems containing same |
Gilbert Dewey, Niloy Mukherjee, Matthew V. Metz, Jack T. Kavalieros, Robert S. Chau |
2014-11-04 |
$23,728,000 |
| 8872225 |
Defect transferred and lattice mismatched epitaxial film |
Benjamin Chu-Kung, Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey +8 more |
2014-10-28 |
$15,939,000 |
| 8558279 |
Non-planar device having uniaxially strained semiconductor body and method of making same |
Stephen M. Cea, Roza Kotlyar, Jack T. Kavalieros, Martin D. Giles, Tahir Ghani +2 more |
2013-10-15 |
$19,695,000 |
| 8334184 |
Polish to remove topography in sacrificial gate layer prior to gate patterning |
Joseph M. Steigerwald, Uday Shah, Seiichi Morimoto |
2012-12-18 |
$29,596,000 |
| 8211772 |
Two-dimensional condensation for uniaxially strained semiconductor fins |
Jack T. Kavalieros, Been-Yih Jin, Markus Kuhn, Stephen M. Cea |
2012-07-03 |
$15,024,000 |
| 7960794 |
Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow |
Brian S. Doyle, Suman Datta, Been-Yih Jin, Robert S. Chau |
2011-06-14 |
$17,389,000 |
| 7348284 |
Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow |
Brian S. Doyle, Suman Datta, Been-Yih Jin, Robert S. Chau |
2008-03-25 |
$11,219,000 |
