Issued Patents All Time
Showing 25 most recent of 35 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10693008 | Cladding layer epitaxy via template engineering for heterogeneous integration on silicon | Niloy Mukherjee, Marko Radosavljevic, Jack T. Kavalieros, Ravi Pillarisetty, Van H. Le +2 more | 2020-06-23 |
| 10573717 | Selective epitaxially grown III-V materials based devices | Gilbert Dewey, Niloy Mukherjee, Matthew V. Metz, Marko Radosavljevic, Benjamin Chu-Kung +2 more | 2020-02-25 |
| 10475706 | Making a defect free fin based device in lateral epitaxy overgrowth region | Benjamin Chu-Kung, Sansaptak Dasgupta, Niloy Mukherjee, Matthew V. Metz, Van H. Le +3 more | 2019-11-12 |
| 10268122 | Techniques to achieve area reduction through co-optimizing logic core blocks and memory redundancies | Silvio E. Bou-Ghazale, Abhik Ghosh | 2019-04-23 |
| 10249490 | Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and conformal epitaxy | Robert S. Chau, Jack T. Kavalieros, Benjamin Chu-Kung, Matthew V. Metz, Niloy Mukherjee +7 more | 2019-04-02 |
| 10217732 | Techniques for forming a compacted array of functional cells | Rany T. Elsayed, Silvio E. Bou-Ghazale, Randy J. Aksamit | 2019-02-26 |
| 10181518 | Selective epitaxially grown III-V materials based devices | Gilbert Dewey, Niloy Mukherjee, Matthew V. Metz, Marko Radosavljevic, Benjamin Chu-Kung +2 more | 2019-01-15 |
| 10096474 | Methods and structures to prevent sidewall defects during selective epitaxy | Niloy Mukherjee, Sanaz K. Gardner, Pragyansri Pathi, Matthew V. Metz, Sansaptak Dasgupta +6 more | 2018-10-09 |
| 10026686 | Decoupling capacitors and arrangements | Silvio E. Bou-Ghazale, Rany T. Elsayed | 2018-07-17 |
| 9923087 | Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation | Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Niloy Mukherjee, Sanaz K. Gardner +3 more | 2018-03-20 |
| 9905651 | GE and III-V channel semiconductor devices having maximized compliance and free surface relaxation | Ravi Pillarisetty, Sansaptak Dasgupta, Van H. Le, Marko Radosavljevic, Gilbert Dewey +8 more | 2018-02-27 |
| 9899505 | Conductivity improvements for III-V semiconductor devices | Marko Radosavljevic, Prashant Majhi, Jack T. Kavalieros, Wilman Tsai, Niloy Mukherjee +3 more | 2018-02-20 |
| 9865684 | Nanoscale structure with epitaxial film having a recessed bottom portion | Benjamin Chu-Kung, Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey +8 more | 2018-01-09 |
| 9711591 | Methods of forming hetero-layers with reduced surface roughness and bulk defect density of non-native surfaces and the structures formed thereby | Niloy Mukherjee, Matthew V. Metz, James M. Powers, Van H. Le, Benjamin Chu-Kung +6 more | 2017-07-18 |
| 9698013 | Methods and structures to prevent sidewall defects during selective epitaxy | Niloy Mukherjee, Sanaz K. Gardner, Pragyansri Pathi, Matthew V. Metz, Sansaptak Dasgupta +6 more | 2017-07-04 |
| 9685381 | Integrating VLSI-compatible fin structures with selective epitaxial growth and fabricating devices thereon | Ravi Pillarisetty, Willy Rachmady, Jack T. Kavalieros, Gilbert Dewey, Benjamin Chu-Kung +4 more | 2017-06-20 |
| 9666583 | Methods of containing defects for non-silicon device engineering | Ravi Pillarisetty, Niloy Mukherjee, Robert S. Chau, Willy Rachmady, Matthew V. Metz +6 more | 2017-05-30 |
| 9653559 | Methods to enhance doping concentration in near-surface layers of semiconductors and methods of making same | Niloy Mukherjee, Gilbert Dewey, Marko Radosavljevic, Sanaz Kabehie, Matthew V. Metz +1 more | 2017-05-16 |
| 9640622 | Selective epitaxially grown III-V materials based devices | Gilbert Dewey, Niloy Mukherjee, Matthew V. Metz, Marko Radosavljevic, Benjamin Chu-Kung +2 more | 2017-05-02 |
| 9640537 | Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and conformal epitaxy | Robert S. Chau, Jack T. Kavalieros, Benjamin Chu-Kung, Matthew V. Metz, Niloy Mukherjee +7 more | 2017-05-02 |
| 9634007 | Trench confined epitaxially grown device layer(s) | Ravi Pillarisetty, Seung Hoon Sung, Jack T. Kavalieros, Sansaptak Dasgupta, Van H. Le +7 more | 2017-04-25 |
| 9590069 | Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation | Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Niloy Mukherjee, Sanaz K. Gardner +3 more | 2017-03-07 |
| 9583396 | Making a defect free fin based device in lateral epitaxy overgrowth region | Benjamin Chu-Kung, Sansaptak Dasgupta, Niloy Mukherjee, Matthew V. Metz, Van H. Le +3 more | 2017-02-28 |
| 9570614 | Ge and III-V channel semiconductor devices having maximized compliance and free surface relaxation | Ravi Pillarisetty, Sansaptak Dasgupta, Van H. Le, Marko Radosavljevic, Gilbert Dewey +8 more | 2017-02-14 |
| 9391181 | Lattice mismatched hetero-epitaxial film | Benjamin Chu-Kung, Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey +8 more | 2016-07-12 |