Issued Patents All Time
Showing 25 most recent of 120 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12432948 | Compositional engineering of Schottky diode | Arnab Sen Gupta, Urusa Alaan, Justin R. Weber, Charles C. Kuo, Yu-Jin Chen +5 more | 2025-09-30 |
| 12414366 | Co-integration of high voltage (HV) and low voltage (LV) transistor structures, using channel height and spacing modulation | Anand S. Murthy, Glenn A. Glass, Rushabh SHAH, Susmita Ghose | 2025-09-09 |
| 12402401 | Integrated circuit devices with FinFETs over gate-all-around transistors | Brian S. Doyle, Van H. Le, Abhishek A. Sharma | 2025-08-26 |
| 12374666 | Integrated circuit assemblies with stacked compute logic and memory dies | Brian S. Doyle, Abhishek A. Sharma, Van H. Le | 2025-07-29 |
| 12328946 | ESD protection decoupled from diffusion | Urusa Alaan, Abhishek A. Sharma, Charles C. Kuo, Benjamin Orr, Nicholas A. Thomson +6 more | 2025-06-10 |
| 12302643 | Backend electrostatic discharge diode apparatus and method of fabricating the same | Ilya V. Karpov, Brian S. Doyle, Ravi Pillarisetty, Abhishek A. Sharma | 2025-05-13 |
| 12268011 | Pillar select transistor for 3-dimensional cross point memory | Derchang Kau, Max Hineman | 2025-04-01 |
| 12058847 | Monolithic memory stack | Abhishek A. Sharma, Charles C. Kuo, Brian S. Doyle, Urusa Alaan, Van H. Le +3 more | 2024-08-06 |
| 11948831 | Apparatus with multi-wafer based device and method for forming such | Anup Pancholi, Paul B. Fischer, Patrick Morrow | 2024-04-02 |
| 11895846 | Double-gated ferroelectric field-effect transistor | Abhishek A. Sharma, Brian S. Doyle, Ravi Pillarisetty, Elijah V. Karpov | 2024-02-06 |
| 11764282 | Antiferroelectric gate dielectric transistors and their methods of fabrication | Ravi Pillarisetty, Brian S. Doyle, Abhishek A. Sharma, Willy Rachmady, Jack T. Kavalieros +1 more | 2023-09-19 |
| 11735595 | Thin film tunnel field effect transistors having relatively increased width | Brian S. Doyle, Ravi Pillarisetty, Abhishek A. Sharma, Elijah V. Karpov | 2023-08-22 |
| 11659722 | Thin-film-transistor based complementary metal-oxide-semiconductor (CMOS) circuit | Willy Rachmady, Ravi Pillarisetty, Elijah V. Karpov, Brian S. Doyle, Anup Pancholi +1 more | 2023-05-23 |
| 11640995 | Ferroelectric field effect transistors (FeFETs) having band-engineered interface layer | Brian S. Doyle, Kevin P. O'Brien, Abhishek A. Sharma, Elijah V. Karpov, Kaan Oguz | 2023-05-02 |
| 11640839 | 1S-1T ferroelectric memory | Abhishek A. Sharma, Brian S. Doyle, Ravi Pillarisetty, Elijah V. Karpov | 2023-05-02 |
| 11631717 | 3D memory array with memory cells having a 3D selector and a storage component | Charles C. Kuo, Abhishek A. Sharma, Willy Rachmady | 2023-04-18 |
| 11626437 | Integration of metasurface lens on wafer level substrate | Kunjal Parikh, Jack T. Kavalieros | 2023-04-11 |
| 11616057 | IC including back-end-of-line (BEOL) transistors with crystalline channel material | Abhishek A. Sharma, Brian S. Doyle, Ravi Pillarisetty, Willy Rachmady | 2023-03-28 |
| 11605671 | Double selector element for low voltage bipolar memory devices | Ravi Pillarisetty, Elijah V. Karpov, Brian S. Doyle, Abhishek A. Sharma | 2023-03-14 |
| 11522011 | Selector element with ballast for low voltage bipolar memory devices | Ravi Pillarisetty, Elijah V. Karpov, Brian S. Doyle, Abhishek A. Sharma | 2022-12-06 |
| 11488978 | Ferroelectric gate oxide based tunnel feFET memory | Brian S. Doyle, Ravi Pillarisetty, Abhishek A. Sharma, Elijah V. Karpov | 2022-11-01 |
| 11430949 | Metal filament memory cells | Ravi Pillarisetty, Elijah V. Karpov, Niloy Mukherjee | 2022-08-30 |
| 11417705 | RRAM memory cell and process to increase RRAM material area in an RRAM memory cell | Brian S. Doyle, Elijah V. Karpov, Ravi Pillarisetty, Ashishek Sharma | 2022-08-16 |
| 11404639 | Selector devices with integrated barrier materials | Elijah V. Karpov, Brian S. Doyle, Abhishek A. Sharma, Ravi Pillarisetty | 2022-08-02 |
| 11393526 | Thin film based 1T-1R cell with resistive random access memory below a bitline | Ravi Pillarisetty, Elijah V. Karpov, Abhishek A. Sharma, Brian S. Doyle | 2022-07-19 |