| 12501628 |
Memory comprising conductive ferroelectric material in series with dielectric material |
Chang-Chin Kuo |
2025-12-16 |
|
| 12495559 |
Capacitor with dual dielectric layers |
I-Cheng Tung, Chung-Chen Lin, Sou-Chi Chang, Matthew V. Metz, Uygar E. Avci +1 more |
2025-12-09 |
|
| 12484457 |
Differentially programmable magnetic tunnel junction device and system including same |
Ian A. Young, Dmitri E. Nikonov, Chung-Chen Lin, Tanay Gosavi, Ashish Verma Penumatcha +1 more |
2025-11-25 |
|
| 12437929 |
Capacitor with an electrically conductive layer coupled with a metal layer of the capacitor |
Chung-Chen Lin, Sou-Chi Chang, Arnab Sen Gupta, I-Cheng Tung, Ian A. Young +3 more |
2025-10-07 |
|
| 12432948 |
Compositional engineering of Schottky diode |
Arnab Sen Gupta, Urusa Alaan, Justin R. Weber, Charles C. Kuo, Yu-Jin Chen +5 more |
2025-09-30 |
|
| 12328946 |
ESD protection decoupled from diffusion |
Urusa Alaan, Abhishek A. Sharma, Charles C. Kuo, Benjamin Orr, Nicholas A. Thomson +6 more |
2025-06-10 |
|
| 12255225 |
Low leakage thin film capacitors using titanium oxide dielectric with conducting noble metal oxide electrodes |
Thomas L. Sounart, Neelam Prabhu Gaunkar, Aleksandar Aleksov, Henning Braunisch, I-Cheng Tung |
2025-03-18 |
|
| 12224309 |
Capacitors with built-in electric fields |
Sou-Chi Chang, Chia-Ching Lin, I-Cheng Tung, Uygar E. Avci, Matthew V. Metz +3 more |
2025-02-11 |
|
| 12100731 |
Crystalline bottom electrode for perovskite capacitors and methods of fabrication |
I-Cheng Tung, Chia-Ching Lin, Sou-Chi Chang, Matthew V. Metz, Uygar E. Avci |
2024-09-24 |
$33,787,000 |
| 12058847 |
Monolithic memory stack |
Prashant Majhi, Abhishek A. Sharma, Charles C. Kuo, Brian S. Doyle, Urusa Alaan +3 more |
2024-08-06 |
$17,070,000 |
| 12009018 |
Transition metal dichalcogenide based spin orbit torque memory device |
Chia-Ching Lin, Sasikanth Manipatruni, Tanay Gosavi, Dmitri E. Nikonov, Benjamin Buford +2 more |
2024-06-11 |
$21,221,000 |
| 11818963 |
Nano-rod spin orbit coupling based magnetic random access memory with shape induced perpendicular magnetic anisotropy |
Sasikanth Manipatruni, Chia-Ching Lin, Christopher J. Wiegand, Tanay Gosavi, Ian A. Young |
2023-11-14 |
$31,444,000 |
| 11696514 |
Transition metal dichalcogenide based magnetoelectric memory device |
Chia-Ching Lin, Sasikanth Manipatruni, Tanay Gosavi, Dmitri E. Nikonov, Benjamin Buford +2 more |
2023-07-04 |
|
| 11683939 |
Spin orbit memory devices with dual electrodes, and methods of fabrication |
Benjamin Buford, Angeline Smith, Noriyuki Sato, Tanay Gosavi, Christopher J. Wiegand +5 more |
2023-06-20 |
$18,411,000 |
| 11640995 |
Ferroelectric field effect transistors (FeFETs) having band-engineered interface layer |
Prashant Majhi, Brian S. Doyle, Kevin P. O'Brien, Abhishek A. Sharma, Elijah V. Karpov |
2023-05-02 |
$21,235,000 |
| 11626451 |
Magnetic memory device with ruthenium diffusion barrier |
Emily Walker, Carl Naylor, Kevin Lin, Tanay Gosavi, Christopher J. Jezewski +6 more |
2023-04-11 |
$27,486,000 |
| 11621391 |
Antiferromagnet based spin orbit torque memory device |
Chia-Ching Lin, Sasikanth Manipatruni, Tanay Gosavi, Dmitri E. Nikonov, Ian A. Young |
2023-04-04 |
$21,090,000 |
| 11594673 |
Two terminal spin orbit memory devices and methods of fabrication |
Noriyuki Sato, Angeline Smith, Tanay Gosavi, Sasikanth Manipatruni, Kevin P. O'Brien +8 more |
2023-02-28 |
$10,430,000 |
| 11575083 |
Insertion layer between spin hall effect or spin orbit torque electrode and free magnet for improved magnetic memory |
Tanay Gosavi, Sasikanth Manipatruni, Ian A. Young, Dmitri E. Nikonov, Chia-Ching Lin |
2023-02-07 |
$11,877,000 |
| 11574666 |
Spin orbit torque memory devices and methods of fabrication |
Tanay Gosavi, Sasikanth Manipatruni, Chia-Ching Lin, Ian A. Young |
2023-02-07 |
$11,877,000 |
| 11557629 |
Spin orbit memory devices with reduced magnetic moment and methods of fabrication |
Christopher J. Wiegand, Noriyuki Sato, Angeline Smith, Tanay Gosavi |
2023-01-17 |
$13,997,000 |
| 11508903 |
Spin orbit torque device with insertion layer between spin orbit torque electrode and free layer for improved performance |
Angeline Smith, Ian A. Young, Sasikanth Manipatruni, Christopher J. Wiegand, Kevin P. O'Brien +4 more |
2022-11-22 |
$12,862,000 |
| 11502188 |
Apparatus and method for boosting signal in magnetoelectric spin orbit logic |
Chia-Ching Lin, Sasikanth Manipatruni, Dmitri E. Nikonov, Ian A. Young, Benjamin Buford +2 more |
2022-11-15 |
$16,955,000 |
| 11476412 |
Perpendicular exchange bias with antiferromagnet for spin orbit coupling based memory |
Tanay Gosavi, Sasikanth Manipatruni, Noriyuki Sato, Kevin P. O'Brien, Benjamin Buford +4 more |
2022-10-18 |
$11,317,000 |
| 11462678 |
Perpendicular spin transfer torque memory (pSTTM) devices with enhanced thermal stability and methods to form the same |
Kevin P. O'Brien, Charles C. Kuo, Mark L. Doczy, Noriyuki Sato |
2022-10-04 |
$13,460,000 |
