| 11978799 |
Method for fabricating transistor with thinned channel |
Justin K. Brask, Robert S. Chau, Suman Datta, Brian S. Doyle, Jack T. Kavalieros +3 more |
2024-05-07 |
|
| 11462678 |
Perpendicular spin transfer torque memory (pSTTM) devices with enhanced thermal stability and methods to form the same |
Kevin P. O'Brien, Kaan Oguz, Charles C. Kuo, Noriyuki Sato |
2022-10-04 |
$13,460,000 |
| 11437567 |
Perpendicular spin transfer torque magnetic mechanism |
Justin S. Brockman, Christopher J. Wiegand, MD Tofizur Rahman, Daniel Ouelette, Angeline Smith +7 more |
2022-09-06 |
$12,766,000 |
| 11430943 |
Magnetic tunnel junction (MTJ) devices with a synthetic antiferromagnet (SAF) structure including a magnetic skyrmion |
Kevin P. O'Brien, Kaan Oguz, Noriyuki Sato, Charles C. Kuo |
2022-08-30 |
$13,077,000 |
| 11404630 |
Perpendicular spin transfer torque memory (pSTTM) devices with enhanced stability and method to form same |
MD Tofizur Rahman, Christopher J. Wiegand, Kaan Oguz, Justin S. Brockman, Daniel G. Ouellette +5 more |
2022-08-02 |
$13,520,000 |
| 11386951 |
Multi-level magnetic tunnel junction (MTJ) devices including mobile magnetic skyrmions or ferromagnetic domains |
Kevin P. O'Brien, Brian S. Doyle, Kaan Oguz, Noriyuki Sato, Charles C. Kuo |
2022-07-12 |
$13,106,000 |
| 11348970 |
Spin orbit torque (SOT) memory device with self-aligned contacts and their methods of fabrication |
Kevin P. O'Brien, Benjamin Buford, Kaan Oguz, Noriyuki Sato, Charles C. Kuo |
2022-05-31 |
$16,893,000 |
| 11295884 |
Perpendicular STTM multi-layer insert free layer |
Kaan Oguz, Kevin P. O'Brien, Brian S. Doyle, Charles C. Kuo |
2022-04-05 |
$18,322,000 |
| 11257613 |
Spin orbit torque (SOT) memory devices with enhanced tunnel magnetoresistance ratio and their methods of fabrication |
Kaan Oguz, Tanay Gosavi, Sasikanth Manipatruni, Charles C. Kuo, Kevin P. O'Brien |
2022-02-22 |
$16,582,000 |
| 11227644 |
Self-aligned spin orbit torque (SOT) memory devices and their methods of fabrication |
Kevin P. O'Brien, Noriyuki Sato, Kaan Oguz, Charles C. Kuo |
2022-01-18 |
$31,898,000 |
| 11031482 |
Gate electrode having a capping layer |
Gilbert Dewey, Suman Datta, Justin K. Brask, Matthew V. Metz |
2021-06-08 |
$26,946,000 |
| 11031545 |
High stability free layer for perpendicular spin torque transfer memory |
Kaan Oguz, Kevin P. O'Brien, Brian S. Doyle, Charles C. Kuo, Daniel G. Ouellette +3 more |
2021-06-08 |
$26,946,000 |
| 10964886 |
Spin transfer torque memory devices having heusler magnetic tunnel junctions |
Brian S. Doyle, Kaan Oguz, Satyarth Suri, Kevin P. O'Brien, Charles C. Kuo |
2021-03-30 |
$32,599,000 |
| 10950660 |
Perpendicular STTM free layer including protective cap |
Kaan Oguz, Kevin O’Brien, Brian S. Doyle, Charles C. Kuo |
2021-03-16 |
$38,556,000 |
| 10937907 |
Method for fabricating transistor with thinned channel |
Justin K. Brask, Robert S. Chau, Suman Datta, Brian S. Doyle, Jack T. Kavalieros +3 more |
2021-03-02 |
$34,569,000 |
| 10868233 |
Approaches for strain engineering of perpendicular magnetic tunnel junctions (pMTJs) and the resulting structures |
Daniel G. Ouellette, Christopher J. Wiegand, MD Tofizur Rahman, Brian Maertz, Oleg Golonzka +5 more |
2020-12-15 |
$39,832,000 |
| 10847714 |
PSTTM device with multi-layered filter stack |
Kaan Oguz, Kevin P. O'Brien, Christopher J. Wiegand, MD Tofizur Rahman, Brian S. Doyle +3 more |
2020-11-24 |
$25,522,000 |
| 10832847 |
Low stray field magnetic memory |
Brian S. Doyle, Kaan Oguz, Kevin P. O'Brien, David L. Kencke, Charles C. Kuo +2 more |
2020-11-10 |
$31,576,000 |
| 10832749 |
Perpendicular magnetic memory with symmetric fixed layers |
Charles C. Kuo, Justin S. Brockman, Juan G. Alzate Vinasco, Kaan Oguz, Kevin P. O'Brien +3 more |
2020-11-10 |
$31,576,000 |
| 10804460 |
Device, system and method for improved magnetic anisotropy of a magnetic tunnel junction |
MD Tofizur Rahman, Christopher J. Wiegand, Brian Maertz, Daniel G. Ouellette, Kevin P. O'Brien +6 more |
2020-10-13 |
$29,561,000 |
| 10770651 |
Perpendicular spin transfer torque memory (PSTTM) devices with enhanced perpendicular anisotropy and methods to form same |
MD Tofizur Rahman, Christopher J. Wiegand, Kaan Oguz, Daniel G. Ouellette, Brian Maertz +4 more |
2020-09-08 |
$26,363,000 |
| 10732217 |
Ferromagnetic resonance testing of buried magnetic layers of whole wafer |
Kevin P. O'Brien, Kaan Oguz, Christopher J. Wiegand, Brian S. Doyle, MD Tofizur Rahman +2 more |
2020-08-04 |
$32,661,000 |
| 10707409 |
Techniques for forming spin-transfer torque memory having a dot-contacted free magnetic layer |
Charles C. Kuo, Kaan Oguz, Brian S. Doyle, David L. Kencke, Satyarth Suri +1 more |
2020-07-07 |
$29,601,000 |
| 10707319 |
Gate electrode having a capping layer |
Gilbert Dewey, Suman Datta, Justin K. Brask, Matthew V. Metz |
2020-07-07 |
$29,601,000 |
| 10636960 |
Strained perpendicular magnetic tunnel junction devices |
Prashanth P. Madras, MD Tofizur Rahman, Christopher J. Wiegand, Brian Maertz, Oleg Golonzka +4 more |
2020-04-28 |
$36,717,000 |