| 11978799 |
Method for fabricating transistor with thinned channel |
Robert S. Chau, Suman Datta, Mark L. Doczy, Brian S. Doyle, Jack T. Kavalieros +3 more |
2024-05-07 |
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| 11031482 |
Gate electrode having a capping layer |
Gilbert Dewey, Mark L. Doczy, Suman Datta, Matthew V. Metz |
2021-06-08 |
$26,946,000 |
| 10937907 |
Method for fabricating transistor with thinned channel |
Robert S. Chau, Suman Datta, Mark L. Doczy, Brian S. Doyle, Jack T. Kavalieros +3 more |
2021-03-02 |
$34,569,000 |
| 10707319 |
Gate electrode having a capping layer |
Gilbert Dewey, Mark L. Doczy, Suman Datta, Matthew V. Metz |
2020-07-07 |
$29,601,000 |
| 10367093 |
Method for fabricating transistor with thinned channel |
Robert S. Chau, Suman Datta, Mark L. Doczy, Brian S. Doyle, Jack T. Kavalieros +3 more |
2019-07-30 |
|
| 10236356 |
Nonplanar device with thinned lower body portion and method of fabrication |
Uday Shah, Brian S. Doyle, Robert S. Chau, Thomas A. Letson |
2019-03-19 |
$29,538,000 |
| 10141437 |
Extreme high mobility CMOS logic |
Suman Datta, Mantu K. Hudait, Mark L. Doczy, Jack T. Kavalieros, Amlan Majumdar +3 more |
2018-11-27 |
$28,030,000 |
| 10121897 |
Field effect transistor with narrow bandgap source and drain regions and method of fabrication |
Robert S. Chau, Suman Datta, Jack T. Kavalieros, Mark L. Doczy, Matthew V. Metz |
2018-11-06 |
$18,970,000 |
| 9806195 |
Method for fabricating transistor with thinned channel |
Robert S. Chau, Suman Datta, Mark L. Doczy, Brian S. Doyle, Jack T. Kavalieros +3 more |
2017-10-31 |
$13,240,000 |
| 9761724 |
Semiconductor device structures and methods of forming semiconductor structures |
Jack T. Kavalieros, Brian S. Doyle, Uday Shah, Suman Datta, Amlan Majumdar +1 more |
2017-09-12 |
$10,213,000 |
| 9748391 |
Field effect transistor with narrow bandgap source and drain regions and method of fabrication |
Robert S. Chau, Suman Datta, Jack T. Kavalieros, Mark L. Doczy, Matthew V. Metz |
2017-08-29 |
$8,286,000 |
| 9741809 |
Nonplanar device with thinned lower body portion and method of fabrication |
Uday Shah, Brian S. Doyle, Robert S. Chau, Thomas A. Letson |
2017-08-22 |
$8,061,000 |
| 9691856 |
Extreme high mobility CMOS logic |
Suman Datta, Mantu K. Hudait, Mark L. Doczy, Jack T. Kavalieros, Amlan Majumdar +3 more |
2017-06-27 |
$7,334,000 |
| 9614083 |
Field effect transistor with narrow bandgap source and drain regions and method of fabrication |
Robert S. Chau, Suman Datta, Jack T. Kavalieros, Mark L. Doczy, Matthew V. Metz |
2017-04-04 |
$8,141,000 |
| 9548363 |
Extreme high mobility CMOS logic |
Suman Datta, Mantu K. Hudait, Mark L. Doczy, Jack T. Kavalieros, Majumdar Amian +3 more |
2017-01-17 |
$15,866,000 |
| 9385180 |
Semiconductor device structures and methods of forming semiconductor structures |
Jack T. Kavalieros, Brian S. Doyle, Uday Shah, Suman Datta, Amlan Majumdar +1 more |
2016-07-05 |
$9,080,000 |
| 9368583 |
Field effect transistor with narrow bandgap source and drain regions and method of fabrication |
Robert S. Chau, Suman Datta, Jack T. Kavalieros, Mark L. Doczy, Matthew V. Metz |
2016-06-14 |
$9,885,000 |
| 9337307 |
Method for fabricating transistor with thinned channel |
Robert S. Chau, Suman Datta, Mark L. Doczy, Brian S. Doyle, Jack T. Kavalieros +3 more |
2016-05-10 |
$12,181,000 |
| 9287380 |
Gate electrode having a capping layer |
Gilbert Dewey, Mark L. Doczy, Suman Datta, Matthew V. Metz |
2016-03-15 |
$12,478,000 |
| 9190518 |
Nonplanar device with thinned lower body portion and method of fabrication |
Uday Shah, Brian S. Doyle, Robert S. Chau, Thomas A. Letson |
2015-11-17 |
$15,457,000 |
| 9048314 |
Field effect transistor with narrow bandgap source and drain regions and method of fabrication |
Robert S. Chau, Suman Datta, Jack T. Kavalieros, Mark L. Doczy, Matthew V. Metz |
2015-06-02 |
$17,367,000 |
| 8933458 |
Semiconductor device structures and methods of forming semiconductor structures |
Jack T. Kavalieros, Brian S. Doyle, Uday Shah, Suman Datta, Amlan Majumdar +1 more |
2015-01-13 |
$22,967,000 |
| 8816394 |
Field effect transistor with narrow bandgap source and drain regions and method of fabrication |
Robert S. Chau, Suman Datta, Jack T. Kavalieros, Mark L. Doczy, Matthew V. Metz |
2014-08-26 |
$15,304,000 |
| 8803255 |
Gate electrode having a capping layer |
Gilbert Dewey, Mark L. Doczy, Suman Datta, Matthew V. Metz |
2014-08-12 |
$14,378,000 |
| 8802517 |
Extreme high mobility CMOS logic |
Suman Datta, Mantu K. Hudait, Mark L. Doczy, Jack T. Kavalieros, Majumdar Amian +3 more |
2014-08-12 |
$14,378,000 |
