Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Field effect transistor with narrow bandgap source and drain regions and method of fabrication

Field effect transistor with narrow bandgap source and drain regions and method of fabrication

US Patent 9748391 · Granted Aug 29, 2017

Estimated economic value: $8,286,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Nanowire transistor fabrication with hardmask layers2025
Staggered vertically spaced integrated circuit line metallization with different2025
Capacitor with dual dielectric layers2025
Subtractively patterned interconnect structures for integrated circuits2025
Capacitor with an electrically conductive layer coupled with a metal layer of th2025
Gate-all-around integrated circuit structures having germanium-diffused nanoribb2025
Compositional engineering of Schottky diode2025
Transistor gate trench engineering to decrease capacitance and resistance2025
Capacitor connections in dielectric layers2025
Formation of gate spacers for strained PMOS gate-all-around transistor structure2025
Integrated circuit interconnect structures with graphene cap2025
Digitally controlled lithographically-defined multi-frequency acoustic resonator2025