| 10897009 |
Resistive memory cells and precursors thereof, methods of making the same, and devices including the same |
Niloy Mukherjee, Ravi Pillarisetty, Prashant Majhi, Ryan E. Arch, Markus Kuhn +6 more |
2021-01-19 |
$115,732,000 |
| 10840431 |
Multilayer selector device with low holding voltage |
Elijah V. Karpov, Ravi Pillarisetty, Prashant Majhi, James S. Clarke |
2020-11-17 |
$36,756,000 |
| 10825861 |
Multilayer selector device with low leakage current |
Elijah V. Karpov, Prashant Majhi, Ravi Pillarisetty, James S. Clarke |
2020-11-03 |
$38,832,000 |
| 10734513 |
Heterojunction TFETs employing an oxide semiconductor |
Prashant Majhi, Jack T. Kavalieros, Elijah V. Karpov, Ravi Pillarisetty |
2020-08-04 |
$32,661,000 |
| 10706921 |
Integrated 1T1R RRAM memory cell |
Elijah V. Karpov, Ravi Pillarisetty, Prashant Majhi, Niloy Mukherjee |
2020-07-07 |
$29,601,000 |
| 10665781 |
Programmable metallization cell with alloy layer |
Elijah V. Karpov, Jeffery D. Bielefeld, James S. Clarke, Ravi Pillarisetty |
2020-05-26 |
$31,191,000 |
| 10658586 |
RRAM devices and their methods of fabrication |
James S. Clarke, Ravi Pillarisetty, Tejaswi K. Indukuri, Niloy Mukherjee, Elijah V. Karpov +1 more |
2020-05-19 |
$31,576,000 |
| 10573809 |
Resistive random access memory with deuterium |
Prashant Majhi, Ravi Pillarisetty, Elijah V. Karpov, Niloy Mukherjee, Pulkit Jain +3 more |
2020-02-25 |
$18,813,000 |
| 10541014 |
Memory cells with enhanced tunneling magnetoresistance ratio, memory devices and systems including the same |
Brian S. Doyle, Elijah V. Karpov, Kaan Oguz, Kevin P. O'Brien, Charles C. Kuo +2 more |
2020-01-21 |
$31,546,000 |
| 10516109 |
Resistive memory cells and precursors thereof, methods of making the same, and devices including the same |
Niloy Mukherjee, Ravi Pillarisetty, Prashant Majhi, Ryan E. Arch, Markus Kuhn +6 more |
2019-12-24 |
$26,956,000 |
| 10516104 |
High retention resistive random access memory |
Prashant Majhi, Elijah V. Karpov, Ravi Pillarisetty, Niloy Mukherjee |
2019-12-24 |
$26,956,000 |
| 10497871 |
High retention resistive random access memory |
Ravi Pillarisetty, Prashant Majhi, Niloy Mukherjee, Elijah V. Karpov |
2019-12-03 |
$19,496,000 |
| 10439134 |
Techniques for forming non-planar resistive memory cells |
Prashant Majhi, Elijah V. Karpov, Niloy Mukherjee, Charles C. Kuo, Ravi Pillarisetty +2 more |
2019-10-08 |
$19,521,000 |
| 10424620 |
Non-volatile memory devices including integrated ballast resistor |
Prashant Majhi, Elijah V. Karpov, Ravi Pillarisetty, Niloy Mukherjee |
2019-09-24 |
$28,939,000 |
| 10396211 |
Functional metal oxide based microelectronic devices |
Elijah V. Karpov, Prashant Majhi, Roza Kotlyar, Niloy Mukherjee, Charles C. Kuo +2 more |
2019-08-27 |
$17,353,000 |
| 10388869 |
Rare earth metal and metal oxide electrode interfacing of oxide memory element in resistive random access memory cell |
Prashant Majhi, Elijah V. Karpov, Niloy Mukherjee, Ravi Pillarisetty, Brian S. Doyle +1 more |
2019-08-20 |
$17,708,000 |
| 10355205 |
Resistive memory cells including localized filamentary channels, devices including the same, and methods of making the same |
Prashant Majhi, Ravi Pillarisetty, Niloy Mukherjee, Elijah V. Karpov, Brian S. Doyle +1 more |
2019-07-16 |
$23,535,000 |
| 10340275 |
Stackable thin film memory |
Elijah V. Karpov, Jack T. Kavalieros, Robert S. Chau, Niloy Mukherjee, Rafael Rios +5 more |
2019-07-02 |
$19,690,000 |
| 10236356 |
Nonplanar device with thinned lower body portion and method of fabrication |
Brian S. Doyle, Justin K. Brask, Robert S. Chau, Thomas A. Letson |
2019-03-19 |
$29,538,000 |
| 10236369 |
Techniques for forming non-planar germanium quantum well devices |
Ravi Pillarisetty, Jack T. Kavalieros, Willy Rachmady, Benjamin Chu-Kung, Marko Radosavljevic +4 more |
2019-03-19 |
$29,538,000 |
| 10090461 |
Oxide-based three-terminal resistive switching logic devices |
Elijah V. Karpov, Prashant Majhi, Ravi Pillarisetty, Brian S. Doyle, Niloy Mukherjee +1 more |
2018-10-02 |
$23,827,000 |
| 9882123 |
Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form same |
Brian S. Doyle, Charles C. Kuo, Kaan Oguz, Elijah V. Karpov, Roksana Golizadeh Mojarad +2 more |
2018-01-30 |
$22,157,000 |
| 9871117 |
Vertical transistor devices for embedded memory and logic technologies |
Brian S. Doyle, Roza Kotlyar, Charles C. Kuo |
2018-01-16 |
$17,139,000 |
| 9825095 |
Hybrid phase field effect transistor |
Ravi Pillarisetty, Brian S. Doyle, Elijah V. Karpov, David L. Kencke, Charles C. Kuo +1 more |
2017-11-21 |
$11,290,000 |
| 9818864 |
Vertical nanowire transistor with axially engineered semiconductor and gate metallization |
Brian S. Doyle, Roza Kotlyar, Charles C. Kuo |
2017-11-14 |
$11,178,000 |
