Brian Maertz — 7 Patents at Intel

Brian Maertz has been granted 7 US patents while listed as an inventor at Intel. The first was granted in 2020 and the most recent in August 2022. Brian Maertz ranks #680,018 of 4,157,543 US inventors in our database (top 16.4%). Patent records list Brian Maertz in Lompoc, CA, US.

Issued Patents All Time

Showing 1–7 of 7 patents

Patent #	Title	Co-Inventors	Date	Approx Value ⓘ
11404630	Perpendicular spin transfer torque memory (pSTTM) devices with enhanced stability and method to form same	MD Tofizur Rahman, Christopher J. Wiegand, Kaan Oguz, Justin S. Brockman, Daniel G. Ouellette +5 more	2022-08-02	$13,520,000
11031545	High stability free layer for perpendicular spin torque transfer memory	Kaan Oguz, Kevin P. O'Brien, Brian S. Doyle, Mark L. Doczy, Charles C. Kuo +3 more	2021-06-08	$26,946,000
10868233	Approaches for strain engineering of perpendicular magnetic tunnel junctions (pMTJs) and the resulting structures	Daniel G. Ouellette, Christopher J. Wiegand, MD Tofizur Rahman, Oleg Golonzka, Justin S. Brockman +5 more	2020-12-15	$39,832,000
10804460	Device, system and method for improved magnetic anisotropy of a magnetic tunnel junction	MD Tofizur Rahman, Christopher J. Wiegand, Daniel G. Ouellette, Kevin P. O'Brien, Kaan Oguz +6 more	2020-10-13	$29,561,000
10770651	Perpendicular spin transfer torque memory (PSTTM) devices with enhanced perpendicular anisotropy and methods to form same	MD Tofizur Rahman, Christopher J. Wiegand, Kaan Oguz, Daniel G. Ouellette, Kevin P. O'Brien +4 more	2020-09-08	$26,363,000
10636960	Strained perpendicular magnetic tunnel junction devices	Prashanth P. Madras, MD Tofizur Rahman, Christopher J. Wiegand, Oleg Golonzka, Kevin P. O'Brien +4 more	2020-04-28	$36,717,000
10559744	Texture breaking layer to decouple bottom electrode from PMTJ device	Christopher J. Wiegand, Daniel G. Oeullette, MD Tofizur Rahman, Oleg Golonzka, Justin S. Brockman +5 more	2020-02-11	$33,267,000

Brian Maertz — 7 Patents

Issued Patents All Time

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