| 12484266 |
Gate-all-around integrated circuit structures having underlying dopant-diffusion blocking layers |
Anand S. Murthy, Biswajeet Guha, Dax M. Crum, Patrick H. Keys, Tahir Ghani +2 more |
2025-11-25 |
|
| 12432964 |
Co-integrated gallium nitride (GaN) and complementary metal oxide semiconductor (CMOS) integrated circuit technology |
Anand S. Murthy, Robert Ehlert, Han Wui Then, Marko Radosavljevic, Nicole K. Thomas +1 more |
2025-09-30 |
|
| 12414366 |
Co-integration of high voltage (HV) and low voltage (LV) transistor structures, using channel height and spacing modulation |
Prashant Majhi, Anand S. Murthy, Rushabh SHAH, Susmita Ghose |
2025-09-09 |
|
| 12402387 |
Integrated circuit structures including a titanium silicide material |
Dan S. LAVRIC, Thomas T. TROEGER, Suresh Vishwanath, Jitendra Kumar Jha, John F. Richards +2 more |
2025-08-26 |
|
| 12342574 |
Contact resistance reduction in transistor devices with metallization on both sides |
Koustav Ganguly, Ryan Keech, Subrina RAFIQUE, Anand S. Murthy, Ehren Mannebach +2 more |
2025-06-24 |
|
| 12272688 |
Selective growth self-aligned gate endcap (SAGE) architectures without fin end gap |
Leonard P. GULER, Zachary Geiger, Szuya S. Liao |
2025-04-08 |
|
| 12255234 |
Integrated circuit structures having germanium-based channels |
Siddharth Chouksey, Anand S. Murthy, Harold W. Kennel, Jack T. Kavalieros, Tahir Ghani +2 more |
2025-03-18 |
|
| 12206027 |
Gate-all-around integrated circuit structures having nanowires with tight vertical spacing |
Anand S. Murthy, Biswajeet Guha, Tahir Ghani, Susmita Ghose, Zachary Geiger |
2025-01-21 |
|
| 12191349 |
Reducing off-state leakage in semiconductor devices |
Dipanjan Basu, Cory E. Weber, Justin R. Weber, Sean T. Ma, Harold W. Kennel +3 more |
2025-01-07 |
|
| 12166124 |
Gate-all-around integrated circuit structures having germanium-doped nanoribbon channel structures |
Ryan Murray Hickey, Anand S. Murthy, Rushabh SHAH, Ju H. Nam |
2024-12-10 |
$13,394,000 |
| 12119387 |
Low resistance approaches for fabricating contacts and the resulting structures |
Gilbert Dewey, Nazila Haratipour, Siddharth Chouksey, Jack T. Kavalieros, Jitendra Kumar Jha +6 more |
2024-10-15 |
$19,078,000 |
| 12046654 |
Integrated circuit structures including a titanium silicide material |
Dan S. LAVRIC, Thomas T. TROEGER, Suresh Vishwanath, Jitendra Kumar Jha, John F. Richards +2 more |
2024-07-23 |
$20,446,000 |
| 12046517 |
Self-aligned 3-D epitaxial structures for MOS device fabrication |
Daniel B. Aubertine, Anand S. Murthy, Gaurav Thareja, Tahir Ghani |
2024-07-23 |
|
| 12046600 |
Techniques for achieving multiple transistor fin dimensions on a single die |
Anand S. Murthy |
2024-07-23 |
$20,446,000 |
| 12021081 |
Techniques for achieving multiple transistor fin dimensions on a single die |
Anand S. Murthy |
2024-06-25 |
$22,163,000 |
| 11942526 |
Integrated circuit contact structures |
Patrick Morrow, Anand S. Murthy, Rishabh Mehandru |
2024-03-26 |
$33,708,000 |
| 11923421 |
Integrated circuit structures having germanium-based channels |
Siddharth Chouksey, Anand S. Murthy, Harold W. Kennel, Jack T. Kavalieros, Tahir Ghani +2 more |
2024-03-05 |
$29,696,000 |
| 11769836 |
Gate-all-around integrated circuit structures having nanowires with tight vertical spacing |
Anand S. Murthy, Biswajeet Guha, Tahir Ghani, Susmita Ghose, Zachary Geiger |
2023-09-26 |
$20,953,000 |
| 11764275 |
Indium-containing fin of a transistor device with an indium-rich core |
Chandra S. Mohapatra, Harold W. Kennel, Anand S. Murthy, Willy Rachmady, Gilbert Dewey +4 more |
2023-09-19 |
$20,015,000 |
| 11757004 |
Transistors including source/drain employing double-charge dopants |
Anand S. Murthy, Tahir Ghani |
2023-09-12 |
$19,004,000 |
| 11735670 |
Non-selective epitaxial source/drain deposition to reduce dopant diffusion for germanium NMOS transistors |
Anand S. Murthy, Karthik Jambunathan, Cory Bomberger, Tahir Ghani, Jack T. Kavalieros +3 more |
2023-08-22 |
$16,803,000 |
| 11699756 |
Source/drain diffusion barrier for germanium nMOS transistors |
Anand S. Murthy, Karthik Jambunathan, Cory Bomberger, Tahir Ghani, Jack T. Kavalieros +3 more |
2023-07-11 |
$21,736,000 |
| 11658217 |
Transistors with ion- or fixed charge-based field plate structures |
Han Wui Then, Marko Radosavljevic, Sansaptak Dasgupta, Nidhi Nidhi, Paul B. Fischer +3 more |
2023-05-23 |
$11,397,000 |
| 11610995 |
Methods of forming dislocation enhanced strain in NMOS and PMOS structures |
Michael Jackson, Anand S. Murthy, Saurabh Morarka, Chandra S. Mohapatra |
2023-03-21 |
|
| 11588017 |
Nanowire for transistor integration |
Chandra S. Mohapatra, Anand S. Murthy, Karthik Jambunathan |
2023-02-21 |
$13,703,000 |
