Issued Patents All Time
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12382721 | Integrated circuit structures having cut metal gates with dielectric spacer fill | Leonard P. GULER, Chanaka D. Munasinghe, Makram ABD EL QADER, Marie T. Conte, Elliot N. Tan +5 more | 2025-08-05 |
| 11961836 | FinFET varactor quality factor improvement | Hyung-Jin Lee, Mark Armstrong, Carlos Nieva-Lozano, Ayan Kar | 2024-04-16 |
| 11869987 | Gate-all-around integrated circuit structures including varactors | Ayan Kar, Carlos Nieva-Lozano, Kalyan C. Kolluru, Biswajeet Guha, Chung-Hsun Lin +2 more | 2024-01-09 |
| 11610995 | Methods of forming dislocation enhanced strain in NMOS and PMOS structures | Michael Jackson, Anand S. Murthy, Glenn A. Glass, Chandra S. Mohapatra | 2023-03-21 |
| 11515424 | Field-effect transistors with asymmetric gate stacks | Said Rami, Hyung-Jin Lee, Guannan Liu, Qiang Yu, Bernhard Sell +1 more | 2022-11-29 |
| 11482618 | Methods of forming dislocation enhanced strain in NMOS and PMOS structures | Michael Jackson, Anand S. Murthy, Glenn A. Glass, Chandra S. Mohapatra | 2022-10-25 |
| 11417781 | Gate-all-around integrated circuit structures including varactors | Ayan Kar, Carlos Nieva-Lozano, Kalyan C. Kolluru, Biswajeet Guha, Chung-Hsun Lin +2 more | 2022-08-16 |
| 11411110 | Methods of forming dislocation enhanced strain in NMOS and PMOS structures | Michael Jackson, Anand S. Murthy, Glenn A. Glass, Chandra S. Mohapatra | 2022-08-09 |
| 11107920 | Methods of forming dislocation enhanced strain in NMOS structures | Michael Jackson, Anand S. Murthy, Glenn A. Glass, Chandra S. Mohapatra | 2021-08-31 |
| 10396201 | Methods of forming dislocation enhanced strain in NMOS structures | Michael Jackson, Anand S. Murthy, Glenn A. Glass, Chandra S. Mohapatra | 2019-08-27 |