| 12467144 |
Methods of correlating zones of processing chambers, and related systems and methods |
Zuoming ZHU, Ala Moradian, Shu-Kwan LAU, Manjunath Subbanna, Errol Antonio C. Sanchez +3 more |
2025-11-11 |
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| 11996447 |
Field effect transistors with gate electrode self-aligned to semiconductor fin |
Sean T. Ma, Matthew V. Metz, Willy Rachmady, Gilbert Dewey, Jack T. Kavalieros +2 more |
2024-05-28 |
$30,739,000 |
| 11764275 |
Indium-containing fin of a transistor device with an indium-rich core |
Glenn A. Glass, Harold W. Kennel, Anand S. Murthy, Willy Rachmady, Gilbert Dewey +4 more |
2023-09-19 |
$20,015,000 |
| 11670682 |
FINFET transistor having a doped sub fin structure to reduce channel to substrate leakage |
Gilbert Dewey, Matthew V. Metz, Willy Rachmady, Anand S. Murthy, Tahir Ghani +2 more |
2023-06-06 |
|
| 11631737 |
Ingaas epi structure and wet etch process for enabling III-v GAA in art trench |
Sanaz K. Gardner, Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Jack T. Kavalieros +4 more |
2023-04-18 |
$32,873,000 |
| 11610995 |
Methods of forming dislocation enhanced strain in NMOS and PMOS structures |
Michael Jackson, Anand S. Murthy, Glenn A. Glass, Saurabh Morarka |
2023-03-21 |
|
| 11588017 |
Nanowire for transistor integration |
Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan |
2023-02-21 |
$13,703,000 |
| 11482618 |
Methods of forming dislocation enhanced strain in NMOS and PMOS structures |
Michael Jackson, Anand S. Murthy, Glenn A. Glass, Saurabh Morarka |
2022-10-25 |
|
| 11444166 |
Backside source/drain replacement for semiconductor devices with metallization on both sides |
Glenn A. Glass, Karthik Jambunathan, Anand S. Murthy, Patrick Morrow, Mauro J. Kobrinsky |
2022-09-13 |
$14,653,000 |
| 11417655 |
High-mobility semiconductor source/drain spacer |
Gilbert Dewey, Matthew V. Metz, Anand S. Murthy, Tahir Ghani, Willy Rachmady +2 more |
2022-08-16 |
$17,788,000 |
| 11411110 |
Methods of forming dislocation enhanced strain in NMOS and PMOS structures |
Michael Jackson, Anand S. Murthy, Glenn A. Glass, Saurabh Morarka |
2022-08-09 |
$13,688,000 |
| 11276755 |
Field effect transistors with gate electrode self-aligned to semiconductor fin |
Sean T. Ma, Matthew V. Metz, Willy Rachmady, Gilbert Dewey, Jack T. Kavalieros +2 more |
2022-03-15 |
$18,336,000 |
| 11205707 |
Optimizing gate profile for performance and gate fill |
Nadia M. Rahhal-Orabi, Tahir Ghani, Willy Rachmady, Matthew V. Metz, Jack T. Kavalieros +2 more |
2021-12-21 |
$33,282,000 |
| 11107920 |
Methods of forming dislocation enhanced strain in NMOS structures |
Michael Jackson, Anand S. Murthy, Glenn A. Glass, Saurabh Morarka |
2021-08-31 |
$22,590,000 |
| 11107890 |
FINFET transistor having a doped subfin structure to reduce channel to substrate leakage |
Gilbert Dewey, Matthew V. Metz, Willy Rachmady, Anand S. Murthy, Tahir Ghani +2 more |
2021-08-31 |
$22,590,000 |
| 11024737 |
Etching fin core to provide fin doubling |
Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan |
2021-06-01 |
$35,542,000 |
| 11004978 |
Methods of forming doped source/drain contacts and structures formed thereby |
Glenn A. Glass, Karthik Jambunathan, Anand S. Murthy, Seiyon Kim |
2021-05-11 |
$38,242,000 |
| 10957769 |
High-mobility field effect transistors with wide bandgap fin cladding |
Sean T. Ma, Gilbert Dewey, Willy Rachmady, Harold W. Kennel, Matthew V. Metz +3 more |
2021-03-23 |
$29,278,000 |
| 10944006 |
Geometry tuning of fin based transistor |
Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Hei Kam, Nabil G. Mistkawi +2 more |
2021-03-09 |
$45,039,000 |
| 10903364 |
Semiconductor device with released source and drain |
Willy Rachmady, Sanaz K. Gardner, Matthew V. Metz, Gilbert Dewey, Sean T. Ma +3 more |
2021-01-26 |
$50,999,000 |
| 10892337 |
Backside source/drain replacement for semiconductor devices with metallization on both sides |
Glenn A. Glass, Karthik Jambunathan, Anand S. Murthy, Patrick Morrow, Mauro J. Kobrinsky |
2021-01-12 |
$55,416,000 |
| 10886408 |
Group III-V material transistors employing nitride-based dopant diffusion barrier layer |
Harold W. Kennel, Glenn A. Glass, Willy Rachmady, Anand S. Murthy, Gilbert Dewey +4 more |
2021-01-05 |
$27,050,000 |
| 10818793 |
Indium-rich NMOS transistor channels |
Anand S. Murthy, Glenn A. Glass, Tahir Ghani, Willy Rachmady, Jack T. Kavalieros +3 more |
2020-10-27 |
$34,955,000 |
| 10797150 |
Differential work function between gate stack metals to reduce parasitic capacitance |
Sean T. Ma, Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Nadia M. Rahhal-Orabi +3 more |
2020-10-06 |
$29,609,000 |
| 10770593 |
Beaded fin transistor |
Gilbert Dewey, Tahir Ghani, Willy Rachmady, Jack T. Kavalieros, Matthew V. Metz +1 more |
2020-09-08 |
$26,363,000 |
