Issued Patents All Time
Showing 25 most recent of 58 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11996447 | Field effect transistors with gate electrode self-aligned to semiconductor fin | Sean T. Ma, Matthew V. Metz, Willy Rachmady, Gilbert Dewey, Jack T. Kavalieros +2 more | 2024-05-28 |
| 11764275 | Indium-containing fin of a transistor device with an indium-rich core | Glenn A. Glass, Harold W. Kennel, Anand S. Murthy, Willy Rachmady, Gilbert Dewey +4 more | 2023-09-19 |
| 11670682 | FINFET transistor having a doped sub fin structure to reduce channel to substrate leakage | Gilbert Dewey, Matthew V. Metz, Willy Rachmady, Anand S. Murthy, Tahir Ghani +2 more | 2023-06-06 |
| 11631737 | Ingaas epi structure and wet etch process for enabling III-v GAA in art trench | Sanaz K. Gardner, Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Jack T. Kavalieros +4 more | 2023-04-18 |
| 11610995 | Methods of forming dislocation enhanced strain in NMOS and PMOS structures | Michael Jackson, Anand S. Murthy, Glenn A. Glass, Saurabh Morarka | 2023-03-21 |
| 11588017 | Nanowire for transistor integration | Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan | 2023-02-21 |
| 11482618 | Methods of forming dislocation enhanced strain in NMOS and PMOS structures | Michael Jackson, Anand S. Murthy, Glenn A. Glass, Saurabh Morarka | 2022-10-25 |
| 11444166 | Backside source/drain replacement for semiconductor devices with metallization on both sides | Glenn A. Glass, Karthik Jambunathan, Anand S. Murthy, Patrick Morrow, Mauro J. Kobrinsky | 2022-09-13 |
| 11417655 | High-mobility semiconductor source/drain spacer | Gilbert Dewey, Matthew V. Metz, Anand S. Murthy, Tahir Ghani, Willy Rachmady +2 more | 2022-08-16 |
| 11411110 | Methods of forming dislocation enhanced strain in NMOS and PMOS structures | Michael Jackson, Anand S. Murthy, Glenn A. Glass, Saurabh Morarka | 2022-08-09 |
| 11276755 | Field effect transistors with gate electrode self-aligned to semiconductor fin | Sean T. Ma, Matthew V. Metz, Willy Rachmady, Gilbert Dewey, Jack T. Kavalieros +2 more | 2022-03-15 |
| 11205707 | Optimizing gate profile for performance and gate fill | Nadia M. Rahhal-Orabi, Tahir Ghani, Willy Rachmady, Matthew V. Metz, Jack T. Kavalieros +2 more | 2021-12-21 |
| 11107890 | FINFET transistor having a doped subfin structure to reduce channel to substrate leakage | Gilbert Dewey, Matthew V. Metz, Willy Rachmady, Anand S. Murthy, Tahir Ghani +2 more | 2021-08-31 |
| 11107920 | Methods of forming dislocation enhanced strain in NMOS structures | Michael Jackson, Anand S. Murthy, Glenn A. Glass, Saurabh Morarka | 2021-08-31 |
| 11024737 | Etching fin core to provide fin doubling | Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan | 2021-06-01 |
| 11004978 | Methods of forming doped source/drain contacts and structures formed thereby | Glenn A. Glass, Karthik Jambunathan, Anand S. Murthy, Seiyon Kim | 2021-05-11 |
| 10957769 | High-mobility field effect transistors with wide bandgap fin cladding | Sean T. Ma, Gilbert Dewey, Willy Rachmady, Harold W. Kennel, Matthew V. Metz +3 more | 2021-03-23 |
| 10944006 | Geometry tuning of fin based transistor | Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Hei Kam, Nabil G. Mistkawi +2 more | 2021-03-09 |
| 10903364 | Semiconductor device with released source and drain | Willy Rachmady, Sanaz K. Gardner, Matthew V. Metz, Gilbert Dewey, Sean T. Ma +3 more | 2021-01-26 |
| 10892337 | Backside source/drain replacement for semiconductor devices with metallization on both sides | Glenn A. Glass, Karthik Jambunathan, Anand S. Murthy, Patrick Morrow, Mauro J. Kobrinsky | 2021-01-12 |
| 10886408 | Group III-V material transistors employing nitride-based dopant diffusion barrier layer | Harold W. Kennel, Glenn A. Glass, Willy Rachmady, Anand S. Murthy, Gilbert Dewey +4 more | 2021-01-05 |
| 10818793 | Indium-rich NMOS transistor channels | Anand S. Murthy, Glenn A. Glass, Tahir Ghani, Willy Rachmady, Jack T. Kavalieros +3 more | 2020-10-27 |
| 10797150 | Differential work function between gate stack metals to reduce parasitic capacitance | Sean T. Ma, Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Nadia M. Rahhal-Orabi +3 more | 2020-10-06 |
| 10770593 | Beaded fin transistor | Gilbert Dewey, Tahir Ghani, Willy Rachmady, Jack T. Kavalieros, Matthew V. Metz +1 more | 2020-09-08 |
| 10748900 | Fin-based III-V/SI or GE CMOS SAGE integration | Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Jack T. Kavalieros, Anand S. Murthy +1 more | 2020-08-18 |