Issued Patents All Time
Showing 26–50 of 58 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10748900 | Fin-based III-V/SI or GE CMOS SAGE integration | Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Jack T. Kavalieros, Anand S. Murthy +1 more | 2020-08-18 |
| 10734412 | Backside contact resistance reduction for semiconductor devices with metallization on both sides | Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Mauro J. Kobrinsky, Patrick Morrow | 2020-08-04 |
| 10651288 | Pseudomorphic InGaAs on GaAs for gate-all-around transistors | Anand S. Murthy, Glenn A. Glass, Willy Rachmady, Gilbert Dewey, Jack T. Kavalieros +2 more | 2020-05-12 |
| 10644137 | III-V finfet transistor with V-groove S/D profile for improved access resistance | Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Sean T. Ma, Sanaz K. Gardner +3 more | 2020-05-05 |
| 10636912 | FINFET transistor having a tapered subfin structure | Gilbert Dewey, Willy Rachmady, Matthew V. Metz, Jack T. Kavalieros, Sean T. Ma +2 more | 2020-04-28 |
| 10586848 | Apparatus and methods to create an active channel having indium rich side and bottom surfaces | Anand S. Murthy, Glenn A. Glass, Matthew V. Metz, Willy Rachmady, Gilbert Dewey +2 more | 2020-03-10 |
| 10580865 | Transistor with a sub-fin dielectric region under a gate | Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Nadia M. Rahhal-Orabi, Jack T. Kavalieros +2 more | 2020-03-03 |
| 10573750 | Methods of forming doped source/drain contacts and structures formed thereby | Glenn A. Glass, Karthik Jambunathan, Anand S. Murthy, Seiyon Kim | 2020-02-25 |
| 10559689 | Crystallized silicon carbon replacement material for NMOS source/drain regions | Karthik Jambunathan, Glenn A. Glass, Anand S. Murthy, Jacob Jensen, Daniel B. Aubertine | 2020-02-11 |
| 10559683 | Apparatus and methods to create a buffer to reduce leakage in microelectronic transistors | Anand S. Murthy, Glenn A. Glass, Tahir Ghani, Willy Rachmady, Gilbert Dewey +2 more | 2020-02-11 |
| 10546858 | Low damage self-aligned amphoteric FINFET tip doping | Jack T. Kavalieros, Anand S. Murthy, Willy Rachmady, Matthew V. Metz, Gilbert Dewey +2 more | 2020-01-28 |
| 10529808 | Dopant diffusion barrier for source/drain to curb dopant atom diffusion | Harold W. Kennel, Glenn A. Glass, Will Rachmady, Gilbert Dewey, Jack T. Kavalieros +4 more | 2020-01-07 |
| 10516021 | Reduced leakage transistors with germanium-rich channel regions | Glenn A. Glass, Karthik Jambunathan, Anand S. Murthy, Seiyon Kim, Jun Sung Kang | 2019-12-24 |
| 10497814 | III-V semiconductor alloys for use in the subfin of non-planar semiconductor devices and methods of forming the same | Harold W. Kennel, Matthew V. Metz, Willy Rachmady, Gilbert Dewey, Anand S. Murthy +2 more | 2019-12-03 |
| 10483353 | Transistor including tensile-strained germanium channel | Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Willy Rachmady, Gilbert Dewey +2 more | 2019-11-19 |
| 10461082 | Well-based integration of heteroepitaxial N-type transistors with P-type transistors | Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Jack T. Kavalieros, Anand S. Murthy +2 more | 2019-10-29 |
| 10461193 | Apparatus and methods to create a buffer which extends into a gated region of a transistor | Gilbert Dewey, Anand S. Murthy, Glenn A. Glass, Willy Rachmady, Jack T. Kavalieros +2 more | 2019-10-29 |
| 10446685 | High-electron-mobility transistors with heterojunction dopant diffusion barrier | Matthew V. Metz, Harold W. Kennel, Gilbert Dewey, Willy Rachmady, Anand S. Murthy +2 more | 2019-10-15 |
| 10431690 | High electron mobility transistors with localized sub-fin isolation | Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Jack T. Kavalieros, Anand S. Murthy +3 more | 2019-10-01 |
| 10418464 | Techniques for forming transistors on the same die with varied channel materials | Glenn A. Glass, Anand S. Murthy, Hei Kam, Tahir Ghani, Karthik Jambunathan | 2019-09-17 |
| 10411007 | High mobility field effect transistors with a band-offset semiconductor source/drain spacer | Gilbert Dewey, Willy Rachmady, Matthew V. Metz, Sean T. Ma, Jack T. Kavalieros +2 more | 2019-09-10 |
| 10403752 | Prevention of subchannel leakage current in a semiconductor device with a fin structure | Karthik Jambunathan, Glenn A. Glass, Anand S. Murthy, Stephen M. Cea, Tahir Ghani | 2019-09-03 |
| 10396201 | Methods of forming dislocation enhanced strain in NMOS structures | Michael Jackson, Anand S. Murthy, Glenn A. Glass, Saurabh Morarka | 2019-08-27 |
| 10388764 | High-electron-mobility transistors with counter-doped dopant diffusion barrier | Harold W. Kennel, Matthew V. Metz, Gilbert Dewey, Willy Rachmady, Anand S. Murthy +2 more | 2019-08-20 |
| 10373977 | Transistor fin formation via cladding on sacrificial core | Glenn A. Glass, Anand S. Murthy, Daniel B. Aubertine, Tahir Ghani, Jack T. Kavalieros +4 more | 2019-08-06 |