| 12349394 |
Dielectric isolation layer between a nanowire transistor and a substrate |
Bruce Beattie, Leonard P. GULER, Biswajeet Guha, William Hsu |
2025-07-01 |
|
| 12328905 |
Cavity spacer for nanowire transistors |
William Hsu, Biswajeet Guha, Leonard P. GULER, Souvik Chakrabarty, Bruce Beattie +1 more |
2025-06-10 |
|
| 12302632 |
Non-planar integrated circuit structures having mitigated source or drain etch from replacement gate process |
Kai Loon Cheong, Erica J. Thompson, Biswajeet Guha, William Hsu, Dax M. Crum +2 more |
2025-05-13 |
|
| 11929396 |
Cavity spacer for nanowire transistors |
William Hsu, Biswajeet Guha, Leonard P. GULER, Souvik Chakrabarty, Bruce Beattie +1 more |
2024-03-12 |
$37,196,000 |
| 11901458 |
Dielectric isolation layer between a nanowire transistor and a substrate |
Bruce Beattie, Leonard P. GULER, Biswajeet Guha, William Hsu |
2024-02-13 |
$18,546,000 |
| 11869973 |
Nanowire transistor structure and method of shaping |
Erica J. Thompson, Aditya Kasukurti, Kai Loon Cheong, Biswajeet Guha, William Hsu +1 more |
2024-01-09 |
$30,329,000 |
| 11869891 |
Non-planar integrated circuit structures having mitigated source or drain etch from replacement gate process |
Kai Loon Cheong, Erica J. Thompson, Biswajeet Guha, William Hsu, Dax M. Crum +2 more |
2024-01-09 |
$30,329,000 |
| 11715787 |
Self-aligned nanowire |
Mark Armstrong, Biswajeet Guha, Bruce Beattie, Tahir Ghani |
2023-08-01 |
$26,467,000 |
| 11404578 |
Dielectric isolation layer between a nanowire transistor and a substrate |
Bruce Beattie, Leonard P. GULER, Biswajeet Guha, William Hsu |
2022-08-02 |
$13,520,000 |
| 11342411 |
Cavity spacer for nanowire transistors |
William Hsu, Biswajeet Guha, Leonard P. GULER, Souvik Chakrabarty, Bruce Beattie +1 more |
2022-05-24 |
$18,289,000 |
| 11276691 |
Gate-all-around integrated circuit structures having self-aligned source or drain undercut for varied widths |
Biswajeet Guha, Bruce Beattie, Stephen M. Cea, Tahir Ghani |
2022-03-15 |
$18,336,000 |
| 11205715 |
Self-aligned nanowire |
Mark Armstrong, Biswajeet Guha, Bruce Beattie, Tahir Ghani |
2021-12-21 |
$33,282,000 |
| 11069795 |
Transistors with channel and sub-channel regions with distinct compositions and dimensions |
Karthik Jambunathan, Glenn A. Glass, Anand S. Murthy, Bruce Beattie, Anupama Bowonder +3 more |
2021-07-20 |
$44,320,000 |
| 10944006 |
Geometry tuning of fin based transistor |
Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Chandra S. Mohapatra, Hei Kam +2 more |
2021-03-09 |
$45,039,000 |
| 10672868 |
Methods of forming self aligned spacers for nanowire device structures |
Karthik Jambunathan, Glenn A. Glass, Anand S. Murthy, Seiyon Kim |
2020-06-02 |
$32,838,000 |
| 10516021 |
Reduced leakage transistors with germanium-rich channel regions |
Glenn A. Glass, Karthik Jambunathan, Anand S. Murthy, Chandra S. Mohapatra, Seiyon Kim |
2019-12-24 |
$26,956,000 |
