| 12507464 |
Gate aligned fin cut for advanced integrated circuit structure fabrication |
Leonard P. GULER, Moh'd A. Hasan, Biswajeet Guha, Charles H. Wallace, Tahir Ghani +2 more |
2025-12-23 |
|
| 12453115 |
Nanowire transistor structure and method of shaping |
Erica J. Thompson, Aditya Kasukurti, Ju Hee Kang, Kai Loon Cheong, Biswajeet Guha +1 more |
2025-10-21 |
|
| 12402349 |
Gate-all-around integrated circuit structures having devices with channel-to-substrate electrical contact |
Biswajeet Guha, Chung-Hsun Lin, Kinyip Phoa, Oleg Golonzka, Ayan Kar +5 more |
2025-08-26 |
|
| 12382706 |
Self-aligned gate endcap (SAGE) architectures with gate-all-around devices |
Biswajeet Guha, Leonard P. GULER, Dax M. Crum, Tahir Ghani |
2025-08-05 |
|
| 12369392 |
Fabrication of gate-all-around integrated circuit structures having pre-spacer deposition cut gates |
Leonard P. GULER, Michael K. Harper, Biswajeet Guha, Tahir Ghani, Niels Zussblatt +6 more |
2025-07-22 |
|
| 12349394 |
Dielectric isolation layer between a nanowire transistor and a substrate |
Bruce Beattie, Leonard P. GULER, Biswajeet Guha, Jun Sung Kang |
2025-07-01 |
|
| 12328905 |
Cavity spacer for nanowire transistors |
Biswajeet Guha, Leonard P. GULER, Souvik Chakrabarty, Jun Sung Kang, Bruce Beattie +1 more |
2025-06-10 |
|
| 12328920 |
Nanoribbon sub-fin isolation by backside Si substrate removal etch selective to source and drain epitaxy |
Biswajeet Guha, Chung-Hsun Lin, Anand S. Murthy, Tahir Ghani |
2025-06-10 |
|
| 12302632 |
Non-planar integrated circuit structures having mitigated source or drain etch from replacement gate process |
Jun Sung Kang, Kai Loon Cheong, Erica J. Thompson, Biswajeet Guha, Dax M. Crum +2 more |
2025-05-13 |
|
| 12294006 |
Gate-all-around integrated circuit structures having insulator substrate |
Chung-Hsun Lin, Biswajeet Guha, Stephen M. Cea, Tahir Ghani |
2025-05-06 |
|
| 12288789 |
Gate-all-around integrated circuit structures having devices with source/drain-to-substrate electrical contact |
Biswajeet Guha, Chung-Hsun Lin, Kinyip Phoa, Oleg Golonzka, Tahir Ghani +5 more |
2025-04-29 |
|
| 12272737 |
Gate-all-around integrated circuit structures having adjacent structures for sub-fin electrical contact |
Biswajeet Guha, Chung-Hsun Lin, Kinyip Phoa, Oleg Golonzka, Tahir Ghani |
2025-04-08 |
|
| 12224350 |
Self-aligned gate endcap (SAGE) architectures with gate-all-around devices |
Biswajeet Guha, Leonard P. GULER, Dax M. Crum, Tahir Ghani |
2025-02-11 |
|
| 12166031 |
Substrate-less electrostatic discharge (ESD) integrated circuit structures |
Biswajeet Guha, Brian J. Greene, Daniel Schulman, Chung-Hsun Lin, Curtis Tsai +1 more |
2024-12-10 |
$13,394,000 |
| 12068314 |
Fabrication of gate-all-around integrated circuit structures having adjacent island structures |
Leonard P. GULER, Biswajeet Guha, Martin Weiss, Apratim Dhar, William T. BLANTON +7 more |
2024-08-20 |
$20,163,000 |
| 12014959 |
Integrated nanowire and nanoribbon patterning in transistor manufacture |
Leonard P. GULER, Biswajeet Guha, Mark Armstrong, Tahir Ghani |
2024-06-18 |
$26,452,000 |
| 11990472 |
Fabrication of gate-all-around integrated circuit structures having pre-spacer deposition cut gates |
Leonard P. GULER, Michael K. Harper, Biswajeet Guha, Tahir Ghani, Niels Zussblatt +6 more |
2024-05-21 |
$18,840,000 |
| 11929396 |
Cavity spacer for nanowire transistors |
Biswajeet Guha, Leonard P. GULER, Souvik Chakrabarty, Jun Sung Kang, Bruce Beattie +1 more |
2024-03-12 |
$37,196,000 |
| 11908856 |
Gate-all-around integrated circuit structures having devices with source/drain-to-substrate electrical contact |
Biswajeet Guha, Chung-Hsun Lin, Kinyip Phoa, Oleg Golonzka, Tahir Ghani +5 more |
2024-02-20 |
$26,968,000 |
| 11901458 |
Dielectric isolation layer between a nanowire transistor and a substrate |
Bruce Beattie, Leonard P. GULER, Biswajeet Guha, Jun Sung Kang |
2024-02-13 |
$18,546,000 |
| 11894368 |
Gate-all-around integrated circuit structures fabricated using alternate etch selective material |
Sudipto Naskar, Biswajeet Guha, Bruce Beattie, Tahir Ghani |
2024-02-06 |
$35,892,000 |
| 11869973 |
Nanowire transistor structure and method of shaping |
Erica J. Thompson, Aditya Kasukurti, Jun Sung Kang, Kai Loon Cheong, Biswajeet Guha +1 more |
2024-01-09 |
$30,329,000 |
| 11869891 |
Non-planar integrated circuit structures having mitigated source or drain etch from replacement gate process |
Jun Sung Kang, Kai Loon Cheong, Erica J. Thompson, Biswajeet Guha, Dax M. Crum +2 more |
2024-01-09 |
$30,329,000 |
| 11855223 |
Self-aligned gate endcap (SAGE) architectures with gate-all-around devices |
Biswajeet Guha, Leonard P. GULER, Dax M. Crum, Tahir Ghani |
2023-12-26 |
$39,948,000 |
| 11837641 |
Gate-all-around integrated circuit structures having adjacent deep via substrate contacts for sub-fin electrical contact |
Biswajeet Guha, Chung-Hsun Lin, Kinyip Phoa, Oleg Golonzka, Tahir Ghani +5 more |
2023-12-05 |
$33,749,000 |
