| 12453115 |
Nanowire transistor structure and method of shaping |
Erica J. Thompson, Aditya Kasukurti, Ju Hee Kang, Kai Loon Cheong, Biswajeet Guha +1 more |
2025-10-21 |
|
| 12349394 |
Dielectric isolation layer between a nanowire transistor and a substrate |
Leonard P. GULER, Biswajeet Guha, Jun Sung Kang, William Hsu |
2025-07-01 |
|
| 12328905 |
Cavity spacer for nanowire transistors |
William Hsu, Biswajeet Guha, Leonard P. GULER, Souvik Chakrabarty, Jun Sung Kang +1 more |
2025-06-10 |
|
| 12302632 |
Non-planar integrated circuit structures having mitigated source or drain etch from replacement gate process |
Jun Sung Kang, Kai Loon Cheong, Erica J. Thompson, Biswajeet Guha, William Hsu +2 more |
2025-05-13 |
|
| 11929396 |
Cavity spacer for nanowire transistors |
William Hsu, Biswajeet Guha, Leonard P. GULER, Souvik Chakrabarty, Jun Sung Kang +1 more |
2024-03-12 |
$37,196,000 |
| 11901458 |
Dielectric isolation layer between a nanowire transistor and a substrate |
Leonard P. GULER, Biswajeet Guha, Jun Sung Kang, William Hsu |
2024-02-13 |
$18,546,000 |
| 11894368 |
Gate-all-around integrated circuit structures fabricated using alternate etch selective material |
Sudipto Naskar, Biswajeet Guha, William Hsu, Tahir Ghani |
2024-02-06 |
$35,892,000 |
| 11869973 |
Nanowire transistor structure and method of shaping |
Erica J. Thompson, Aditya Kasukurti, Jun Sung Kang, Kai Loon Cheong, Biswajeet Guha +1 more |
2024-01-09 |
$30,329,000 |
| 11869891 |
Non-planar integrated circuit structures having mitigated source or drain etch from replacement gate process |
Jun Sung Kang, Kai Loon Cheong, Erica J. Thompson, Biswajeet Guha, William Hsu +2 more |
2024-01-09 |
$30,329,000 |
| 11715787 |
Self-aligned nanowire |
Mark Armstrong, Biswajeet Guha, Jun Sung Kang, Tahir Ghani |
2023-08-01 |
$26,467,000 |
| 11404578 |
Dielectric isolation layer between a nanowire transistor and a substrate |
Leonard P. GULER, Biswajeet Guha, Jun Sung Kang, William Hsu |
2022-08-02 |
$13,520,000 |
| 11342411 |
Cavity spacer for nanowire transistors |
William Hsu, Biswajeet Guha, Leonard P. GULER, Souvik Chakrabarty, Jun Sung Kang +1 more |
2022-05-24 |
$18,289,000 |
| 11276691 |
Gate-all-around integrated circuit structures having self-aligned source or drain undercut for varied widths |
Biswajeet Guha, Jun Sung Kang, Stephen M. Cea, Tahir Ghani |
2022-03-15 |
$18,336,000 |
| 11205715 |
Self-aligned nanowire |
Mark Armstrong, Biswajeet Guha, Jun Sung Kang, Tahir Ghani |
2021-12-21 |
$33,282,000 |
| 11069795 |
Transistors with channel and sub-channel regions with distinct compositions and dimensions |
Karthik Jambunathan, Glenn A. Glass, Anand S. Murthy, Jun Sung Kang, Anupama Bowonder +3 more |
2021-07-20 |
$44,320,000 |
| 9472399 |
Three-dimensional germanium-based semiconductor devices formed on globally or locally isolated substrates |
Annalisa Cappellani, Pragyansri Pathi, Abhijit Jayant Pethe |
2016-10-18 |
$9,528,000 |
| 9041106 |
Three-dimensional germanium-based semiconductor devices formed on globally or locally isolated substrates |
Annalisa Cappellani, Pragyansri Pathi, Abhijit Jayant Pethe |
2015-05-26 |
$20,586,000 |
| 6597046 |
Integrated circuit with multiple gate dielectric structures |
Robert S. Chau, Reza Arghavani |
2003-07-22 |
$27,595,000 |
| 6465358 |
Post etch clean sequence for making a semiconductor device |
Michael S. Nashner |
2002-10-15 |
$56,657,000 |
| 6124171 |
Method of forming gate oxide having dual thickness by oxidation process |
Reza Arghavani, Robert S. Chau, Jack T. Kavalieros, Bob McFadden |
2000-09-26 |
$171,565,000 |
| 6087236 |
Integrated circuit with multiple gate dielectric structures |
Robert S. Chau, Reza Arghavani |
2000-07-11 |
$279,406,000 |
| 5898968 |
Accessory for cleaning golf club heads and golf balls |
— |
1999-05-04 |
|
| 4909185 |
Cantilever and cold zone assembly for loading and unloading an oven |
Robert Aldridge |
1990-03-20 |
|
