Issued Patents All Time
Showing 1–23 of 23 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12363967 | Integration methods to fabricate internal spacers for nanowire devices | Seiyon Kim, Kelin J. Kuhn, Tahir Ghani, Anand S. Murthy, Mark Armstrong +2 more | 2025-07-15 |
| 12294027 | Semiconductor device having doped epitaxial region and its methods of fabrication | Anand S. Murthy, Daniel B. Aubertine, Tahir Ghani | 2025-05-06 |
| 12278144 | Gate contact structure over active gate and method to fabricate same | Tahir Ghani, Mark Bohr, Clair Webb, Harry Gomez, Annalisa Cappellani | 2025-04-15 |
| 11908934 | Semiconductor device having doped epitaxial region and its methods of fabrication | Anand S. Murthy, Daniel Bourne Aubertine, Tahir Ghani | 2024-02-20 |
| 11869939 | Integration methods to fabricate internal spacers for nanowire devices | Seiyon Kim, Kelin J. Kuhn, Tahir Ghani, Anand S. Murthy, Mark Armstrong +2 more | 2024-01-09 |
| 11302777 | Integration methods to fabricate internal spacers for nanowire devices | Seiyon Kim, Kelin J. Kuhn, Tahir Ghani, Anand S. Murthy, Mark Armstrong +2 more | 2022-04-12 |
| 11004739 | Gate contact structure over active gate and method to fabricate same | Tahir Ghani, Mark Bohr, Clair Webb, Harry Gomez, Annalisa Cappellani | 2021-05-11 |
| 10957796 | Semiconductor device having doped epitaxial region and its methods of fabrication | Anand S. Murthy, Daniel Bourne Aubertine, Tahir Ghani | 2021-03-23 |
| 10847631 | Gate-all-around (GAA) transistors with nanowires on an isolation pedestal | Annalisa Cappellani, Tahir Ghani, Harry Gomez | 2020-11-24 |
| 10804357 | Integration methods to fabricate internal spacers for nanowire devices | Seiyon Kim, Kelin J. Kuhn, Tahir Ghani, Anand S. Murthy, Mark Armstrong +2 more | 2020-10-13 |
| 10580860 | Integration methods to fabricate internal spacers for nanowire devices | Seiyon Kim, Kelin J. Kuhn, Tahir Ghani, Anand S. Murthy, Mark Armstrong +2 more | 2020-03-03 |
| 10283589 | Integration methods to fabricate internal spacers for nanowire devices | Seiyon Kim, Kelin J. Kuhn, Tahir Ghani, Anand S. Murthy, Mark Armstrong +2 more | 2019-05-07 |
| 10229981 | Gate-all-around (GAA) transistor with stacked nanowires on locally isolated substrate | Annalisa Cappellani, Tahir Ghani, Harry Gomez | 2019-03-12 |
| 10192783 | Gate contact structure over active gate and method to fabricate same | Tahir Ghani, Mark Bohr, Clair Webb, Harry Gomez, Annalisa Cappellani | 2019-01-29 |
| 10121856 | Integration methods to fabricate internal spacers for nanowire devices | Seiyon Kim, Kelin J. Kuhn, Tahir Ghani, Anand S. Murthy, Mark Armstrong +2 more | 2018-11-06 |
| 9859368 | Integration methods to fabricate internal spacers for nanowire devices | Seiyon Kim, Kelin J. Kuhn, Tahir Ghani, Anand S. Murthy, Mark Armstrong +2 more | 2018-01-02 |
| 9484272 | Methods for fabricating strained gate-all-around semiconductor devices by fin oxidation using an undercut etch-stop layer | Annalisa Cappellani, Tahir Ghani, Harry Gomez | 2016-11-01 |
| 9484447 | Integration methods to fabricate internal spacers for nanowire devices | Seiyon Kim, Kelin J. Kuhn, Tahir Ghani, Anand S. Murthy, Mark Armstrong +2 more | 2016-11-01 |
| 9472399 | Three-dimensional germanium-based semiconductor devices formed on globally or locally isolated substrates | Annalisa Cappellani, Pragyansri Pathi, Bruce Beattie | 2016-10-18 |
| 9461143 | Gate contact structure over active gate and method to fabricate same | Tahir Ghani, Mark Bohr, Clair Webb, Harry Gomez, Annalisa Cappellani | 2016-10-04 |
| 9041106 | Three-dimensional germanium-based semiconductor devices formed on globally or locally isolated substrates | Annalisa Cappellani, Pragyansri Pathi, Bruce Beattie | 2015-05-26 |
| 8735869 | Strained gate-all-around semiconductor devices formed on globally or locally isolated substrates | Annalisa Cappellani, Tahir Ghani, Harry Gomez | 2014-05-27 |
| 8598003 | Semiconductor device having doped epitaxial region and its methods of fabrication | Anand S. Murtthy, Daniel Bourne Aubertine, Tahir Ghani | 2013-12-03 |