Issued Patents All Time
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12278144 | Gate contact structure over active gate and method to fabricate same | Abhijit Jayant Pethe, Tahir Ghani, Mark Bohr, Clair Webb, Annalisa Cappellani | 2025-04-15 |
| 11004739 | Gate contact structure over active gate and method to fabricate same | Abhijit Jayant Pethe, Tahir Ghani, Mark Bohr, Clair Webb, Annalisa Cappellani | 2021-05-11 |
| 10847631 | Gate-all-around (GAA) transistors with nanowires on an isolation pedestal | Annalisa Cappellani, Abhijit Jayant Pethe, Tahir Ghani | 2020-11-24 |
| 10229981 | Gate-all-around (GAA) transistor with stacked nanowires on locally isolated substrate | Annalisa Cappellani, Abhijit Jayant Pethe, Tahir Ghani | 2019-03-12 |
| 10192783 | Gate contact structure over active gate and method to fabricate same | Abhijit Jayant Pethe, Tahir Ghani, Mark Bohr, Clair Webb, Annalisa Cappellani | 2019-01-29 |
| 10026829 | Semiconductor device with isolated body portion | Annalisa Cappellani, Stephen M. Cea, Tahir Ghani, Jack T. Kavalieros, Patrick H. Keys +5 more | 2018-07-17 |
| 9978636 | Isolated and bulk semiconductor devices formed on a same bulk substrate | Annalisa Cappellani, Kelin J. Kuhn, Rafael Rios | 2018-05-22 |
| 9608059 | Semiconductor device with isolated body portion | Annalisa Cappellani, Stephen M. Cea, Tahir Ghani, Jack T. Kavalieros, Patrick H. Keys +5 more | 2017-03-28 |
| 9484272 | Methods for fabricating strained gate-all-around semiconductor devices by fin oxidation using an undercut etch-stop layer | Annalisa Cappellani, Abhijit Jayant Pethe, Tahir Ghani | 2016-11-01 |
| 9461143 | Gate contact structure over active gate and method to fabricate same | Abhijit Jayant Pethe, Tahir Ghani, Mark Bohr, Clair Webb, Annalisa Cappellani | 2016-10-04 |
| 9425212 | Isolated and bulk semiconductor devices formed on a same bulk substrate | Annalisa Cappellani, Kelin J. Kuhn, Rafael Rios | 2016-08-23 |
| 8735869 | Strained gate-all-around semiconductor devices formed on globally or locally isolated substrates | Annalisa Cappellani, Abhijit Jayant Pethe, Tahir Ghani | 2014-05-27 |
| 8313999 | Multi-gate semiconductor device with self-aligned epitaxial source and drain | Annalisa Cappellani, Tahir Ghani, Kuan-Yueh Shen, Anand S. Murthy | 2012-11-20 |
| 7732285 | Semiconductor device having self-aligned epitaxial source and drain extensions | Bernhard Sell, Tahir Ghani, Anand S. Murthy | 2010-06-08 |