| 12412782 |
Semiconductor device and method for fabricating the same |
— |
2025-09-09 |
|
| 12363967 |
Integration methods to fabricate internal spacers for nanowire devices |
Kelin J. Kuhn, Tahir Ghani, Anand S. Murthy, Mark Armstrong, Rafael Rios +2 more |
2025-07-15 |
|
| 12310044 |
Vertical integration scheme and circuit elements architecture for area scaling of semiconductor devices |
Rishabh Mehandru, Patrick Morrow, Ranjith Kumar, Cory E. Weber, Stephen M. Cea +1 more |
2025-05-20 |
|
| 12142634 |
Silicon and silicon germanium nanowire structures |
Kelin J. Kuhn, Rafael Rios, Stephen M. Cea, Martin D. Giles, Annalisa Cappellani +3 more |
2024-11-12 |
$636,000 |
| 12125916 |
Nanowire structures having non-discrete source and drain regions |
Stephen M. Cea, Annalisa Cappellani, Martin D. Giles, Rafael Rios, Kelin J. Kuhn |
2024-10-22 |
$118,222,000 |
| 12046637 |
Nanowire transistor fabrication with hardmask layers |
Seung Hoon Sung, Kelin J. Kuhn, Willy Rachmady, Jack T. Kavalieros |
2024-07-23 |
$732,000 |
| 11869939 |
Integration methods to fabricate internal spacers for nanowire devices |
Kelin J. Kuhn, Tahir Ghani, Anand S. Murthy, Mark Armstrong, Rafael Rios +2 more |
2024-01-09 |
$731,000 |
| 11799029 |
Multilayer insulator stack for ferroelectric transistor and capacitor |
Uygar E. Avci, Joshua M. Howard, Ian A. Young |
2023-10-24 |
$20,059,000 |
| 11757026 |
Nanowire structures having wrap-around contacts |
Stephen M. Cea, Cory E. Weber, Patrick H. Keys, Michael Haverty, Sadasivan Shankar |
2023-09-12 |
$80,406,000 |
| 11735652 |
Field effect transistors having ferroelectric or antiferroelectric gate dielectric structure |
Uygar E. Avci, Joshua M. Howard, Ian A. Young, Daniel H. Morris |
2023-08-22 |
$16,803,000 |
| 11723188 |
Replacement metal COB integration process for embedded DRAM |
Uygar E. Avci, Ian A. Young, Daniel H. Morris, Yih Wang, Ruth A. Brain |
2023-08-08 |
$22,376,000 |
| 11677003 |
Nanowire transistor fabrication with hardmask layers |
Seung Hoon Sung, Kelin J. Kuhn, Willy Rachmady, Jack T. Kavalieros |
2023-06-13 |
$864,000 |
| 11552180 |
Antiferroelectric perovskite gate oxide for transistor applications |
Sasikanth Manipatruni, Uygar E. Avci, Ian A. Young |
2023-01-10 |
$14,061,000 |
| 11552197 |
Nanowire structures having non-discrete source and drain regions |
Stephen M. Cea, Annalisa Cappellani, Martin D. Giles, Rafael Rios, Kelin J. Kuhn |
2023-01-10 |
$48,235,000 |
| 11522072 |
Vertical integration scheme and circuit elements architecture for area scaling of semiconductor devices |
Rishabh Mehandru, Patrick Morrow, Ranjith Kumar, Cory E. Weber, Stephen M. Cea +1 more |
2022-12-06 |
$14,727,000 |
| 11502103 |
Memory cell with a ferroelectric capacitor integrated with a transtor gate |
Daniel H. Morris, Uygar E. Avci, Ian A. Young |
2022-11-15 |
$16,955,000 |
| 11456372 |
Multi-height finfet device by selective oxidation |
Gopinath Bhimarasetti, Rafael Rios, Jack T. Kavalieros, Tahir Ghani, Anand S. Murthy +1 more |
2022-09-27 |
$23,391,000 |
| 11335600 |
Integration method for finfet with tightly controlled multiple fin heights |
Jack T. Kavalieros, Anand S. Murthy, Glenn A. Glass, Karthik Jambunathan |
2022-05-17 |
$14,251,000 |
| 11322504 |
Ferroelectric-capacitor integration using novel multi-metal-level interconnect with replaced dielectric for ultra-dense embedded SRAM in state-of-the-art CMOS technology |
Uygar E. Avci, Daniel H. Morris, Yih Wang, Ruth A. Brain, Ian A. Young |
2022-05-03 |
$16,346,000 |
| 11302777 |
Integration methods to fabricate internal spacers for nanowire devices |
Kelin J. Kuhn, Tahir Ghani, Anand S. Murthy, Mark Armstrong, Rafael Rios +2 more |
2022-04-12 |
$702,000 |
| 11239361 |
Multilayer insulator stack for ferroelectric transistor and capacitor |
Uygar E. Avci, Joshua M. Howard, Ian A. Young |
2022-02-01 |
$16,992,000 |
| 11171145 |
Memory devices based on capacitors with built-in electric field |
Sou-Chi Chang, Uygar E. Avci, Daniel H. Morris, Ashish Verma Penumatcha, Ian A. Young |
2021-11-09 |
$28,241,000 |
| 11139400 |
Non-planar semiconductor device having hybrid geometry-based active region |
Rafael Rios, Fahmida Ferdousi, Kelin J. Kuhn |
2021-10-05 |
$94,144,000 |
| 11024714 |
Nanowire transistor fabrication with hardmask layers |
Seung Hoon Sung, Kelin J. Kuhn, Willy Rachmady, Jack T. Kavalieros |
2021-06-01 |
$1,176,000 |
| 11004978 |
Methods of forming doped source/drain contacts and structures formed thereby |
Glenn A. Glass, Karthik Jambunathan, Anand S. Murthy, Chandra S. Mohapatra |
2021-05-11 |
$38,242,000 |
