Issued Patents All Time
Showing 25 most recent of 37 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11734174 | Low overhead, high bandwidth re-configurable interconnect apparatus and method | Huichu Liu, Tanay Karnik, Tejpal Singh, Yen-Cheng Liu, Lavanya Subramanian +6 more | 2023-08-22 |
| 11735652 | Field effect transistors having ferroelectric or antiferroelectric gate dielectric structure | Seiyon Kim, Uygar E. Avci, Joshua M. Howard, Ian A. Young | 2023-08-22 |
| 11723188 | Replacement metal COB integration process for embedded DRAM | Uygar E. Avci, Ian A. Young, Seiyon Kim, Yih Wang, Ruth A. Brain | 2023-08-08 |
| 11522130 | Metal insulator transition field programmable routing block | Uygar E. Avci, Ian A. Young | 2022-12-06 |
| 11502103 | Memory cell with a ferroelectric capacitor integrated with a transtor gate | Seiyon Kim, Uygar E. Avci, Ian A. Young | 2022-11-15 |
| 11495596 | Logic-embedded diode/tunnel diode coupled to floating gate with I-V characteristics suitable for logic state retention | Uygar E. Avci, Ian A. Young | 2022-11-08 |
| 11450675 | One transistor and one ferroelectric capacitor memory cells in diagonal arrangements | Uygar E. Avci, Ian A. Young | 2022-09-20 |
| 11411172 | Magnetoelectric spin orbit logic based full adder | Huichu Liu, Sasikanth Manipatruni, Kaushik Vaidyanathan, Tanay Karnik, Ian A. Young | 2022-08-09 |
| 11387404 | Magnetoelectric spin orbit logic based minority gate | Huichu Liu, Tanay Karnik, Sasikanth Manipatruni, Kaushik Vaidyanathan, Ian A. Young | 2022-07-12 |
| 11355505 | Vertical backend transistor with ferroelectric material | Uygar E. Avci, Ian A. Young | 2022-06-07 |
| 11355504 | Anti-ferroelectric capacitor memory cell | Uygar E. Avci, Ian A. Young | 2022-06-07 |
| 11322504 | Ferroelectric-capacitor integration using novel multi-metal-level interconnect with replaced dielectric for ultra-dense embedded SRAM in state-of-the-art CMOS technology | Uygar E. Avci, Seiyon Kim, Yih Wang, Ruth A. Brain, Ian A. Young | 2022-05-03 |
| 11232832 | Polarization gate stack SRAM | Uygar E. Avci, Ian A. Young | 2022-01-25 |
| 11171145 | Memory devices based on capacitors with built-in electric field | Sou-Chi Chang, Uygar E. Avci, Seiyon Kim, Ashish Verma Penumatcha, Ian A. Young | 2021-11-09 |
| 11037614 | Imprint-free write driver for ferroelectric memory | Huichu Liu, Sasikanth Manipatruni, Ian A. Young, Tanay Karnik, Kaushik Vaidyanathan | 2021-06-15 |
| 11004868 | Memory field-effect transistors and methods of manufacturing the same | Seiyon Kim, Uygar E. Avci, Joshua M. Howard, Ian A. Young | 2021-05-11 |
| 10998339 | One transistor and ferroelectric FET based memory cell | Uygar E. Avci, Ian A. Young | 2021-05-04 |
| 10901486 | Configurable interconnect apparatus and method | Kaushik Vaidyanathan, Uygar E. Avci, Ian A. Young, Tanay Karnik, Huichu Liu | 2021-01-26 |
| 10886286 | Vertical memory control circuitry located in interconnect layers | Ashish Verma Penumatcha, Uygar E. Avci, Ian A. Young | 2021-01-05 |
| 10832761 | Polarization gate stack SRAM | Uygar E. Avci, Ian A. Young | 2020-11-10 |
| 10777250 | Save-restore circuitry with metal-ferroelectric-metal devices | Kaushik Vaidyanathan, Huichu Liu, Dileep J. Kurian, Uygar E. Avci, Tanay Karnik +1 more | 2020-09-15 |
| 10749104 | Combinatorial magneto electric spin orbit logic | Huichu Liu, Tanay Karnik, Sasikanth Manipatruni, Kaushik Vaidyanathan, Ian A. Young | 2020-08-18 |
| 10748602 | Nonvolatile SRAM | Huichu Liu, Sasikanth Manipatruni, Kaushik Vaidyanathan, Niloy Mukherjee, Dmitri E. Nikonov +2 more | 2020-08-18 |
| 10734378 | Transistor threshold voltage variation optimization | Uygar E. Avci, Ian A. Young | 2020-08-04 |
| 10720504 | Transistor with dynamic threshold voltage for low-leakage standby and high speed active mode | Uygar E. Avci, Ian A. Young | 2020-07-21 |