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Home › Ferroelectric-capacitor integration using novel multi-metal-level interconnect with replaced dielectric for ultra-dense embedded SRAM in state-of-the-art CMOS technology

Ferroelectric-capacitor integration using novel multi-metal-level interconnect with replaced dielectric for ultra-dense embedded SRAM in state-of-the-art CMOS technology

US Patent 11322504 · Granted May 3, 2022

Estimated economic value: $16,346,000 ⓘ

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