Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Memory devices based on capacitors with built-in electric field

Memory devices based on capacitors with built-in electric field

US Patent 11171145 · Granted Nov 9, 2021

Estimated economic value: $28,241,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Ferroelectrically modulated spin orbit logic device2025
Capacitor with dual dielectric layers2025
Capacitor with dual dielectric layers2025
Differentially programmable magnetic tunnel junction device and system including2025
Differentially programmable magnetic tunnel junction device and system including2025
Perovskite-based magnetoelectric spin-orbit logic devices2025
Three-dimensional nanoribbon-based hysteretic memory2025
Magnetoelectric spin-orbit device with in-plane and perpendicular magnetic layer2025
Piezo-resistive resonator device having drive and sense transistors with wells o2025
Capacitor with an electrically conductive layer coupled with a metal layer of th2025
Capacitor with an electrically conductive layer coupled with a metal layer of th2025
Capacitor with an electrically conductive layer coupled with a metal layer of th2025