| 12294027 |
Semiconductor device having doped epitaxial region and its methods of fabrication |
Anand S. Murthy, Tahir Ghani, Abhijit Jayant Pethe |
2025-05-06 |
|
| 11171058 |
Self-aligned 3-D epitaxial structures for MOS device fabrication |
Glenn A. Glass, Anand S. Murthy, Gaurav Thareja, Tahir Ghani |
2021-11-09 |
$28,241,000 |
| 10559689 |
Crystallized silicon carbon replacement material for NMOS source/drain regions |
Karthik Jambunathan, Glenn A. Glass, Anand S. Murthy, Jacob Jensen, Chandra S. Mohapatra |
2020-02-11 |
$33,267,000 |
| 10396203 |
Pre-sculpting of Si fin elements prior to cladding for transistor channel applications |
Glenn A. Glass, Anand S. Murthy, Subhash M. Joshi |
2019-08-27 |
$17,353,000 |
| 10084087 |
Enhanced dislocation stress transistor |
Cory E. Weber, Mark Liu, Anand S. Murthy, Hemant Deshpande |
2018-09-25 |
$26,257,000 |
| 10014412 |
Pre-sculpting of Si fin elements prior to cladding for transistor channel applications |
Glenn A. Glass, Anand S. Murthy, Subhash M. Joshi |
2018-07-03 |
$24,450,000 |
| 9660078 |
Enhanced dislocation stress transistor |
Cory E. Weber, Mark Liu, Anand S. Murthy, Hemant Deshpande |
2017-05-23 |
$7,972,000 |
| 9653584 |
Pre-sculpting of Si fin elements prior to cladding for transistor channel applications |
Glenn A. Glass, Anand S. Murthy, Subhash M. Joshi |
2017-05-16 |
$8,597,000 |
| 9614060 |
Nanowire transistor with underlayer etch stops |
Seiyon Kim, Kelin J. Kuhn, Anand S. Murthy |
2017-04-04 |
$8,141,000 |
| 9385221 |
Nanowire transistor with underlayer etch stops |
Seiyon Kim, Kelin J. Kuhn, Anand S. Murthy |
2016-07-05 |
$9,080,000 |
| 9231076 |
Enhanced dislocation stress transistor |
Cory E. Weber, Mark Liu, Anand S. Murthy, Hemant Deshpande |
2016-01-05 |
$11,513,000 |
| 9184294 |
High mobility strained channels for fin-based transistors |
Stephen M. Cea, Anand S. Murthy, Glenn A. Glass, Tahir Ghani, Jack T. Kavalieros +1 more |
2015-11-10 |
$14,197,000 |
| 9076814 |
Enhanced dislocation stress transistor |
Cory E. Weber, Mark Liu, Anand S. Murthy, Hemant Deshpande |
2015-07-07 |
$19,273,000 |
| 9064944 |
Nanowire transistor with underlayer etch stops |
Seiyon Kim, Kelin J. Kuhn, Anand S. Murthy |
2015-06-23 |
$16,735,000 |
| 9012284 |
Nanowire transistor devices and forming techniques |
Glenn A. Glass, Kelin J. Kuhn, Seiyon Kim, Anand S. Murthy |
2015-04-21 |
$17,773,000 |
| 8957476 |
Conversion of thin transistor elements from silicon to silicon germanium |
Glenn A. Glass, Anand S. Murthy, Gaurav Thareja, Stephen M. Cea |
2015-02-17 |
$23,949,000 |
| 8847281 |
High mobility strained channels for fin-based transistors |
Stephen M. Cea, Anand S. Murthy, Glenn A. Glass, Tahir Ghani, Jack T. Kavalieros +1 more |
2014-09-30 |
$16,330,000 |
| 8779477 |
Enhanced dislocation stress transistor |
Cory E. Weber, Mark Liu, Anand S. Murthy, Hemant Deshpande |
2014-07-15 |
$14,407,000 |
| 7833883 |
Precursor gas mixture for depositing an epitaxial carbon-doped silicon film |
Danielle Simonelli, Anand S. Murthy |
2010-11-16 |
$15,367,000 |
| 7663192 |
CMOS device and method of manufacturing same |
Bernhard Sell, Anand S. Murthy, Mark Liu |
2010-02-16 |
$21,778,000 |
