| 12501656 |
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Doped polar layers and semiconductor device incorporating same |
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| 12308837 |
Multiplier with non-linear polar material |
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| 12294029 |
Doped polar layers and semiconductor device incorporating same |
Ramesh Ramamoorthy, Sasikanth Manipatruni |
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| 12200941 |
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Sasikanth Manipatruni, Rajeev Kumar Dokania, Ramamoorthy Ramesh, Amrita Mathuriya |
2025-01-14 |
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| 12137574 |
Integration of ferroelectric memory devices having stacked electrodes with transistors |
Sasikanth Manipatruni, Rajeev Kumar Dokania, Ramamoorthy Ramesh, Amrita Mathuriya |
2024-11-05 |
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| 12113097 |
Ferroelectric capacitor integrated with logic |
Sasikanth Manipatruni, Rajeev Kumar Dokania, Ramamoorthy Ramesh, Amrita Mathuriya |
2024-10-08 |
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| 12088297 |
Majority gate based low power ferroelectric based adder with reset mechanism |
Sasikanth Manipatruni, Yuan-Sheng Fang, Robert Menezes, Rajeev Kumar Dokania, Ramamoorthy Ramesh +1 more |
2024-09-10 |
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| 12046517 |
Self-aligned 3-D epitaxial structures for MOS device fabrication |
Glenn A. Glass, Daniel B. Aubertine, Anand S. Murthy, Tahir Ghani |
2024-07-23 |
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| 11949017 |
Doped polar layers and semiconductor device incorporating same |
Ramesh Ramamoorthy, Sasikanth Manipatruni |
2024-04-02 |
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| 11949018 |
Doped polar layers and semiconductor device incorporating same |
Ramesh Ramamoorthy, Sasikanth Manipatruni |
2024-04-02 |
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| 11916149 |
Doped polar layers and semiconductor device incorporating same |
Ramesh Ramamoorthy, Sasikanth Manipatruni |
2024-02-27 |
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| 11908943 |
Manganese-doped perovskite layers and semiconductor device incorporating same |
Ramesh Ramamoorthy, Sasikanth Manipatruni |
2024-02-20 |
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| 11888067 |
B-site doped perovskite layers and semiconductor device incorporating same |
Ramesh Ramamoorthy, Sasikanth Manipatruni |
2024-01-30 |
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| 11888066 |
Doped polar layers and semiconductor device incorporating same |
Ramesh Ramamoorthy, Sasikanth Manipatruni |
2024-01-30 |
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| 11863183 |
Low power non-linear polar material based threshold logic gate multiplier |
Sasikanth Manipatruni, Yuan-Sheng Fang, Robert Menezes, Rajeev Kumar Dokania, Ramamoorthy Ramesh +1 more |
2024-01-02 |
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| 11848386 |
B-site doped perovskite layers and semiconductor device incorporating same |
Ramesh Ramamoorthy, Sasikanth Manipatruni |
2023-12-19 |
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| 11837664 |
Doped polar layers and semiconductor device incorporating same |
Ramesh Ramamoorthy, Sasikanth Manipatruni |
2023-12-05 |
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| 11758738 |
Integration of ferroelectric memory devices with transistors |
Sasikanth Manipatruni, Rajeev Kumar Dokania, Ramamoorthy Ramesh, Amrita Mathuriya |
2023-09-12 |
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| 11757043 |
Doped polar layers and semiconductor device incorporating same |
Ramesh Ramamoorthy, Sasikanth Manipatruni |
2023-09-12 |
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| 11735467 |
Airgap formation processes |
Ashish Pal, Sankuei Lin, Ching-Mei Hsu, Nitin K. Ingle, Ajay Bhatnagar +1 more |
2023-08-22 |
$40,609,000 |
| 11705335 |
Conformal high concentration boron doping of semiconductors |
Srinivas Gandikota, Abhijit Basu Mallick, Swaminathan Srinivasan, Rui Cheng, Susmit Singha Roy +2 more |
2023-07-18 |
$58,990,000 |
| 11641747 |
Integration of a ferroelectric memory device with a transistor |
Sasikanth Manipatruni, Rajeev Kumar Dokania, Ramamoorthy Ramesh, Amrita Mathuriya |
2023-05-02 |
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| 11615986 |
Methods and apparatus for metal silicide deposition |
Xuebin Li, Wei Liu, Shashank Sharma, Patricia M. Liu, Schubert S. Chu |
2023-03-28 |
$69,791,000 |
| 11522044 |
Ferroelectric capacitor integrated with logic |
Sasikanth Manipatruni, Rajeev Kumar Dokania, Ramamoorthy Ramesh, Amrita Mathuriya |
2022-12-06 |
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