Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Doped polar layers and semiconductor device incorporating same

Doped polar layers and semiconductor device incorporating same

US Patent 12369351 · Granted Jul 22, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Doped polar layers and semiconductor device incorporating same2025
Doped polar layers and semiconductor device incorporating same2025
Doped polar layers and semiconductor device incorporating same2025
Asynchronous carry-ripple adder with majority or minority gates2025
Perovskite-based magnetoelectric spin-orbit logic devices2025
Integrating embedded memory with logic interconnects2025
Method of forming capacitors through wafer bonding2025
High-density low voltage non-volatile memory with unidirectional plate-line and 2025
Ripple carry adder with ferroelectric or paraelectric wide-input minority or maj2025
Diode connected non-linear input capacitors based majority gate2025
Method of integrating a capacitor including a non-linear polar material with a t2025
Non-linear polar material based low power multiplier with transmission-gate base2025