Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Gate-all-around integrated circuit structures having devices with channel-to-substrate electrical contact

Gate-all-around integrated circuit structures having devices with channel-to-substrate electrical contact

US Patent 12402349 · Granted Aug 26, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Double-sided integrated circuit transistor structures with depopulated bottom ch2025
Epitaxial source/drain back-side device contact structures with wrap around meta2025
Package architecture of photonic system with vertically stacked dies having plan2025
Gate-all-around integrated circuit structures having necked feature2025
Gate aligned fin cut for advanced integrated circuit structure fabrication2025
Gate aligned fin cut for advanced integrated circuit structure fabrication2025
Substrate-less lateral diode integrated circuit structures2025
Substrate-less lateral diode integrated circuit structures2025
Substrate-less lateral diode integrated circuit structures2025
Substrate-less lateral diode integrated circuit structures2025
Substrate-less lateral diode integrated circuit structures2025
Integrated circuit structures having dielectric anchor void2025